04DEC06 Search Results

MIL-S-7742

Abstract: 526-33AB47-202 8-32UNC-2A 526-33ab
Contextual Info: A. HONEYWELL PART NUMBER REV DOCUMENT CHANGED BY CHECK B 0026692 CH 04DEC06 RK 526-33AB 47-202 B B TH ERMISTOR 9 2 6 — 202 V M V — B01 WIRE 2 4 AWG 7 - 3 2 STRANDED SILVER PLATED C O P P E R BLACK TEFLON INSULATION HOUSING 3 1 6 OR 3 1 6L STA IN LESS STEEL

B152

Abstract: ASTM-D-3295
Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. COPYRIGHT 2 LOC ALL RIGHTS RESERVED. G DIST R E V IS IO N S 02 DESCRIPTION LTR P2 DATE 04DEC06 REV PER ECR 06-028261 DWN APVD JR TM D D 1\ STAMPED AMP, AS SHOWN 2 ”A ”±.003 DIA

Si1411DH

Contextual Info: SPICE Device Model Si1411DH Vishay Siliconix P-Channel 150-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si7356ADP

Contextual Info: SPICE Device Model Si7356ADP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SMR1DZ

Contextual Info: SMR1DZ/SMR3DZ Z-Foil Technology Vishay Foil Resistors Ultra High Precision Z-Foil Molded Surface Mount Resistor with TCR down to ± 0.05 ppm/°C, PCR of ± 5 ppm at Rated Power and Load Life Stability of ± 0.005 % FEATURES P R O D U C T INTRODUCTION The SMRxDZ is a precision molded surface mountable

Contextual Info: SiE832DF Vishay Siliconix New Product N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using RoHS Top-Exposed PolarPAK® Package for COMPLIANT Double-Sided Cooling • Leadframe-Based New Encapsulated Package

Contextual Info: ST7L05, ST7L09 8-bit MCU for automotive with single voltage Flash memory, data EEPROM, ADC, timers, SPI s ct Features • ■ ■ ■ Memories – 1.5 Kbytes program memory: Single voltage extended Flash (XFlash) with read-out protection capability, In-Application Programming

Contextual Info: ST7L05, ST7L09 8-bit MCU for automotive with single voltage Flash memory, data EEPROM, ADC, timers, SPI Features • ■ ■ ■ ■ Memories – 1.5 Kbytes program memory: Single voltage extended Flash XFlash with read-out protection capability, In-Application Programming

Contextual Info: TLWR/Y8600 Vishay Semiconductors TELUX FEATURES • Utilizing one of the world’s brightest AS AllnGaP technologies • High luminous flux e3 • Supreme heat dissipation: RthJP is 90 K/W • High operating temperature: Tamb = - 40 to + 110 °C • Meets SAE and ECE color requirements for the

SiE810DF

Abstract: SiE810DF-T1-E3 S-6247
Contextual Info: SiE810DF Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Gen II Power MOSFET • Ultra Low Thermal Resistance Using RoHS Top-Exposed PowerPAK® Package for COMPLIANT Double-Sided Cooling • Leadframe-Based New Encapsulated Package

ICF CP 1005

Abstract: JRC 7005 AN1324 HE10 ST7L05 ST7L09 H 941
Contextual Info: ST7L05, ST7L09 8-bit MCU for automotive with single voltage Flash memory, data EEPROM, ADC, timers, SPI Features • ■ ■ ■ ■ Memories – 1.5 Kbytes program memory: Single voltage extended Flash XFlash with read-out protection capability, In-Application Programming

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 6T FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: TIN QUALITY CLASS: 25 MATING CYCLES PITCH: 3.00MM A ENVIRONMENTAL OPERATING TEMPERATURE: -25 UP TO 105°C

74355

Abstract: sup90n08-4m8p
Contextual Info: SPICE Device Model SUP90N08-4m8P Vishay Siliconix N-Channel 75-V D-S 150°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

70745

Abstract: SUP75N03-04 SUB75N03-04 SUB75N03-04-E3 SUP75N03-04-E3
Contextual Info: SUP/SUB75N03-04 Vishay Siliconix N-Channel 30-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 30 0.004 75a • TrenchFET Power MOSFETs • 175 °C Rated Maximum Junction Temperature Available RoHS* COMPLIANT TO-220AB D TO-263

Digital Weighing Scale schematic

Abstract: tedea 1042 Tedea-Huntleigh model 1022 schematic diagram to convert 230VAC to 5VDC POWER tedea huntleigh load cell 3410 tedea load cell 1004 Weighing scale sensor gozinta Tedea-Huntleigh 9010 manual weight indicator vt200 tedea huntleigh load cell 3411
Contextual Info: VISHAY INTERTECHN O L O G Y , INC . INTERACTIVE data book load cells and indicators vishay transDucers vse-db0086-0802 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

624-82

Abstract: 62482
Contextual Info: SiE830DF Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Extremely Low Qgd WFET Technology for Low Switching Losses RoHS • Ultra Low Thermal Resistance Using COMPLIANT ® Top-Exposed PolarPAK Package for Double-Sided Cooling

jrc 741

Abstract: JRC 7005 ST7FL09Y0MA 620 TG On Semi ST7L09 ICF CP 1005 16-pins 300mil SO16
Contextual Info: ST7L05, ST7L09 8-bit MCU for automotive with single voltage Flash memory, data EEPROM, ADC, timers, SPI Features • ■ ■ ■ ■ Memories – 1.5 Kbytes program memory: Single voltage extended Flash XFlash with read-out protection capability, In-Application Programming

TO-252-4L

Abstract: T-0657 0209 00222 TO252-4L
Contextual Info: Package Information Vishay Siliconix TO252-4L CASE OUTLINE E E2 A A 0.254 M C A B C C D1 L B H D E1 L2 A1 b1 X4 p(X4) b(X5) DETAIL “A” 0.254 M C A B H B L1 SECTION B-B DETAIL “A” SYMBOL b1 MILLIMETERS INCHES MIN. MAX. MIN. MAX. A 2.22 2.38 0.087 0.094

Si5857DU-T1-E3

Abstract: 62480
Contextual Info: Si5857DU Vishay Siliconix New Product P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.058 at VGS = - 4.5 V 6 0.100 at VGS = - 2.5 V 6 VDS (V) - 20 • LITTLE FOOT Plus Power MOSFET • New Thermally Enhanced PowerPAK®

EIA-481-3

Abstract: crimp dimension tolerance
Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL ICONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: TIN QUALITY CLASS: 25 MATING CYCLES PITCH: FOR 3.00MM A ENVIRONMENTAL OPERATING TEMPERATURE: -25 UP TO 105°C COMPLIANCE: LEAD FREE AND ROHS

624-82

Abstract: 62482
Contextual Info: SiE830DF Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Extremely Low Qgd WFET Technology for Low Switching Losses RoHS • Ultra Low Thermal Resistance Using COMPLIANT ® Top-Exposed PolarPAK Package for Double-Sided Cooling

Si1411DH

Abstract: SI1411
Contextual Info: SPICE Device Model Si1411DH Vishay Siliconix P-Channel 150-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 6T COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: TIN QUALITY CLASS: 25 MATING CYCLES PITCH: 3.00MM A ENVIRONMENTAL OPERATING TEMPERATURE: -25 UP TO 105°C FLAMABILITY RATING: UL94-V0

SUP75N03-04

Abstract: SUB75N03-04 SUB75N03-04-E3 SUP75N03-04-E3
Contextual Info: SUP/SUB75N03-04 Vishay Siliconix N-Channel 30-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 30 0.004 75a • TrenchFET Power MOSFETs • 175 °C Rated Maximum Junction Temperature Available RoHS* COMPLIANT TO-220AB D TO-263