04DEC00 Search Results

Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . COPYRIGHT RELEASED FOR P U B L IC A T IO N REVIS IO N S LOC A L L R IG H T S R E S E R V E D . BY TYCO ELECTRONICS CORPORATION. 2001 2 3 J LTR D E S C R IP T IO N DATE RELEASED F J 0 0 - 2 7 2 8 - 0 1 DWN

Si4442DY

Abstract: s02673
Contextual Info: Si4442DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 22 0.005 @ VGS = 4.5 V 19 0.0075 @ VGS = 2.5 V 17 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: 4 RELEASED T H IS D R A W IN G IS U N P U B L IS H E D . COPYRIGHT 2002 2 3 BY TYCO ELECTRONICS CORPORATION. F O R P U B L IC A T IO N 2002. LOC J A L L R IG H T S R E S E R V E D . R EVIS IO N S D IS T LTR LO U , , v — D y ^ 4 (THROUGH CAVITY CENTER)

Contextual Info: THIS DRAWING 15 UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. AF DIST REVISIONS 50 REDRAWN PER 0 G 3 A -0 8 0 8 -0 0 JR 1 1 DECOO GP D 1 A I [. CDNTIUDUS S T R IP EIN REELS. 0.00381 [.000150] MIN TIN DVER

Contextual Info: Si4838DY New Product Vishay Siliconix N-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) 12 rDS(on) (W) ID (A) 0.003 @ VGS = 4.5 V 25 0.004 @ VGS = 2.5 V 20 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: THIS DRAWING 15 UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST AF 50 REVISIONS REDRAWN PER 0 G 3 A -0 8 0 8 -0 0 JR 1 1 DECOO GP D 1 A CDNTIUDUS S T R IP EIN REELS. 0.00381 [.000150] MIN TIN DVER

Contextual Info: 4 TH IS DRAWING I5 U N P U B L IS H E D . COPYRIGHT BY TYCO 2 3 R ELEAS ED ELECTRONICS CORPORATION. FOR ALL PUBLIC ATION RIG HTS LOC - RESERVED . AF DIST REVIS IO N S 50 D E S C R IP T IO N LTR B REL DATE PER 0G3A—0232 —02 26A P R 02 DWN APVD JR ND

T2901

Abstract: ramp generator 555 GFSK 2369 E7 T7024 smc air filter regulator HP-VFQFP-N48
Contextual Info: T2901 Bluetooth Single-Chip Transceiver IC Description The T2901 is an RF-IC intended for Bluetooth applications in the 2.4 GHz to 2.5 GHz ISM band. The HP-VFQFP-N48 packaged IC is a complete transceiver including image rejection mixer, IF amplifier, FM demodulator, baseband filter, RSSI, TX preamplifier,

Contextual Info: Si5465EDC New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.037 @ VGS = –4.5 V –7.0 –12 0.048 @ VGS = –2.5 V –6.1 0.065 @ VGS = –1.8 V –5.2 1206-8 ChipFET S 1 D D D D D D G S Marking Code 5.4 kW

Contextual Info: DG200B Vishay Siliconix Monolithic Dual SPST CMOS Analog Switch FEATURES BENEFITS APPLICATIONS D D D D D Wide Dynamic Range D Simple Interfacing D Reduced External Component Count D D D D "15 V Input Signal Range 44-V Maximum Supply Ranges On-Resistance: 45 W

Contextual Info: 4 TH IS DRAWING I5 U N P U B L IS H E D . COPYRIGHT BY TYCO 2 3 R ELEAS ED ELECTRONICS CORPORATION. FOR ALL PUBLIC ATION RIG HTS LOC - RESERVED . AF DIST REVIS IO N S 50 D E S C R IP T IO N LTR B DATE REL PER 0G3A—0209 —02 7APR02 DWN APVD JR ND D D

S02673

Contextual Info: Si4442DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 22 0.005 @ VGS = 4.5 V 19 0.0075 @ VGS = 2.5 V 17 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: n 7 T HI S D R A W I N G JÊL COPYRIGHT IS U N PU BL ISH ED. 19 R E L E A S E D FOR P U B L I C A T I O N BY AMP IN COR PORATED. 6 4 5 2 3 LOG 19 ALL R I G H T S RESER VED . AD ïïT s t REVISIONS 47 DESCRIPTION A M A T E R IAL F IN I5H F INI5H : H005ING CONTACT

GPT-15F

Abstract: un24b
Contextual Info: 7 DRAWING TH IS MADE IN DRAWING THIRD 15 ANGLE UNPUBLI5HED COPYRIGHT 6 5 19 RELEASED BY AMP FOR PUBLICATIO N INCORPORATED. ALL 2 3 4 77 PROJECTION INTERNATIO NAL RIGHTS DI ST LOC 19 AJ RESERVED. REV I 5 I 0 N5 16 LTR ZONE DE5CR[PTION ADD -16 AB D 2 POUYESTER

Contextual Info: 4 THIS DRAWING IS UN PUBLISHED . COPYRIGHT RELEASED FOR P U B L IC A T IO N REVIS IO N S LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. 2001 2 3 J LTR DESCRIPTION DATE RELEASED F J 0 0 - 2 7 2 8 - 0 1 DWN 1 / R E B / ’0 2 LO U 4 A ^ — (4)

Contextual Info: Si5463EDC New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.062 @ VGS = –4.5 V –5.1 0.068@ VGS = –3.6 V –4.9 0.085 @ VGS = –2.5 V –4.4 0.120 @ VGS = –1.8 V –3.7 1206-8 ChipFET S 1 D