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Catalog Datasheet	MFG & Type	PDF	Document Tags
55b2 Abstract: No abstract text available Text: BUK9Y40-55B N-channel TrenchMOS logic level FET Rev. 02 — 11 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology.	Original	PDF	BUK9Y40-55B 55b2
55B3 Abstract: BUK9Y40-55B Text: BUK9Y40-55B N-channel TrenchMOS logic level FET Rev. 03 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This	Original	PDF	BUK9Y40-55B 55B3 BUK9Y40-55B
BUK9Y40-55B Abstract: 03np80 Text: BUK9Y40-55B N-channel TrenchMOS logic level FET Rev. 01 — 28 May 2004 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.	Original	PDF	BUK9Y40-55B M3D748 OT669 BUK9Y40-55B 03np80
Untitled Abstract: No abstract text available Text: BUK9Y40-55B N-channel TrenchMOS logic level FET Rev. 03 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This	Original	PDF	BUK9Y40-55B