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Abstract: No abstract text available
Text: DP AK BUK6213-30A N-channel TrenchMOS intermediate level FET Rev. 03 — 2 February 2011 Product data sheet 1. Product profile 1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK6213-30A
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03NK60
Abstract: BUK6213-30A
Text: DP AK BUK6213-30A N-channel TrenchMOS intermediate level FET Rev. 03 — 2 February 2011 Product data sheet 1. Product profile 1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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Original
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BUK6213-30A
03NK60
BUK6213-30A
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PDF
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03NK60
Abstract: BUK6213-30A
Text: BUK6213-30A TrenchMOS Intermediate level FET Rev. 02 — 22 September 2003 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General Purpose Automotive GPA TrenchMOS™ technology.
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BUK6213-30A
M3D300
OT428
03NK60
BUK6213-30A
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03NK60
Abstract: No abstract text available
Text: BUK6213-30A TrenchMOS logic level FET Rev. 01 — 25 August 2003 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General Purpose Automotive GPA TrenchMOS™ technology.
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Original
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BUK6213-30A
M3D300
BUK6213-30A
OT428
03NK60
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PDF
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