Untitled
Abstract: No abstract text available
Text: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si7613DN
2002/95/EC
Si7613DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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s8058
Abstract: No abstract text available
Text: Si7120DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.019 at VGS = 10 V 10 0.028 at VGS = 4.5 V 8.2 • • • • • Halogen-free Option Available TrenchFET Power MOSFET RoHS COMPLIANT New Low Thermal Resistance
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Si7120DN
Si7120DN-T1-E3
Si7120DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
s8058
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Untitled
Abstract: No abstract text available
Text: SQS464EEN www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • Typical ESD Protection 800 V • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd
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SQS464EEN
AEC-Q101
2002/95/EC
SQS464EEN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SQS404EN-T1-GE3
Abstract: marking D3 TSOP-6 PPAK1212
Text: SQS404EN www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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SQS404EN
AEC-Q101
2002/95/EC
SQS404EN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SQS404EN-T1-GE3
marking D3 TSOP-6
PPAK1212
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MAR 826
Abstract: No abstract text available
Text: SQ7415AEN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen free According to IEC61249-2-21 Definition • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC
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SQ7415AEN
IEC61249-2-21
AEC-Q101
2002/95/EC
SQ7415AEN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
MAR 826
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land pattern for TSOP input id
Abstract: SQS423EN-T1-GE3
Text: SQS423EN www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd PRODUCT SUMMARY VDS (V) - 30 RDS(on) () at VGS = - 10 V • 100 % Rg and UIS Tested 0.021 RDS(on) () at VGS = - 4.5 V
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SQS423EN
AEC-Q101
SQS423EN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
land pattern for TSOP input id
SQS423EN-T1-GE3
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Untitled
Abstract: No abstract text available
Text: SQS482EN www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested 30 RDS(on) () at VGS = 10 V 0.0085 RDS(on) () at VGS = 4.5 V
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SQS482EN
AEC-Q101
SQS482EN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SiS434DN Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0076 at VGS = 10 V 35 0.0092 at VGS = 4.5 V 35 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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SiS434DN
2002/95/EC
SiS434DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SQ7415EN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile • Fast Switching • AEC-Q101 Qualified
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SQ7415EN
AEC-Q101
2002/95/EC
SQ7415EN-T1-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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TSOP8
Abstract: si7401
Text: Si7820DN Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.240 at VGS = 10 V 2.6 0.250 at VGS = 6 V 2.5 Qg (Typ.) 12.1 PowerPAK 1212-8 APPLICATIONS S 3.30 mm • Primary Side Switch - Telecom Power Supplies
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Si7820DN
2002/95/EC
Si7820DN-T1-E3
Si7820DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
TSOP8
si7401
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si7415dn-t1-ge3
Abstract: No abstract text available
Text: Si7415DN Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.065 at VGS = - 10 V - 5.7 0.110 at VGS = - 4.5 V - 4.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Fast Switching
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Si7415DN
Si7415DN-T1-E3
Si7415DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si7922DN Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.195 at VGS = 10 V 2.5 0.230 at VGS = 6 V 2.3 • Halogen-free Option Available • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®
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Si7922DN
Si7922DN-T1-E3
Si7922DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: RLP Vishay Sfernice Insulated Precision Wirewound Resistors Axial Leads FEATURES • 1 Watt to 10 Watt at 25 °C • CECC 40201-006 • Conforms to NF C 83-210 In wirewound precision resistors, the RLP series holds a leading position in professional applications whenever an
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08-Apr-05
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si7615
Abstract: SI7615ADN SI7615A
Text: New Product Si7615ADN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.0044 at VGS = - 10 V - 35a 0.0060 at VGS = - 4.5 V - 35a 0.0098 at VGS = - 2.5 V a Qg (Typ.) 59 nC - 35 APPLICATIONS PowerPAK 1212-8
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Si7615ADN
Si7615ADN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si7615
SI7615A
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Untitled
Abstract: No abstract text available
Text: Si7107DN Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0108 at VGS = - 4.5 V - 15.3 0.015 at VGS = - 2.5 V - 13.0 0.020 at VGS = - 1.8 V - 11.2 PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21
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Si7107DN
2002/95/EC
Si7107DN-T1-E3
Si7107DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SiS407ADN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) f, g 0.009 at VGS = -4.5 V -18 0.0122 at VGS = -2.5 V -18 0.0190 at VGS = -1.8 V -18 VDS (V) -20 • TrenchFET power MOSFET Qg (TYP.)
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SiS407ADN
SiS407ADN-T1-GE3electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiS778DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)e 0.0050 at VGS = 10 V 35 0.0062 at VGS = 4.5 V 35 VDS (V) 30 Qg (Typ.) 13.3 nC PowerPAK 1212-8 S 3.30 mm 3.30 mm 1 APPLICATIONS S 2
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SiS778DN
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiS780DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0135 at VGS = 10 V 18a 0.0175 at VGS = 4.5 V 18a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21
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SiS780DN
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product Si7120ADN Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 9.5 0.031 at VGS = 4.5 V 7.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si7120ADN
2002/95/EC
Si7120ADN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SQS466EEN www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • Typical ESD Protection 800 Vg • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd
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SQS466EEN
AEC-Q101
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiS447DN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) () Max. ID (A) 0.0071 at VGS = -10 V -18 a 0.0090 at VGS = -4.5 V -18 a 0.0125 at VGS = -2.5 V -18 a Qg (Typ.) 57.5 nC • TrenchFET Gen III P-Channel power MOSFET
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SiS447DN
SiS447DN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Volant NEA/NEF010 Series Non-Isolated 10A SIP DC/DC Converters Features: 9 Small size, minimal footprint/low profile 9 10A Output Current all voltages 9 High Efficiency: up to 95% 9 High reliability 9 RoHS Compliant 9 Cost efficient open frame design 9 Pre-bias monotonic start-up
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NEA/NEF010
NEA/NEF10
03Mar06
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NFA0201501B0C
Abstract: No abstract text available
Text: Non-Isolated 20A SIP/SMT DC/DC Converters VOLANT NFA020 SERIES Features: 9 Small size, minimal footprint – SMT/SIP package 9 20A Output Current all voltages 9 High Efficiency: up to 95% 9 High reliability 9 RoHS Compliant 9 Output voltage programmable by an external resistor.
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NFA020
03Mar06
NFA0201501B0C
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Untitled
Abstract: No abstract text available
Text: SiS402DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.006 at VGS = 10 V 35 0.008 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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SiS402DN
2002/95/EC
SiS402DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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