Untitled
Abstract: No abstract text available
Text: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical
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M29W160ET
M29W160EB
TSOP48
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PDF
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Untitled
Abstract: No abstract text available
Text: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ACCESS TIMES: 70, 90ns PROGRAMMING TIME – 10 s per Byte/Word typical 35 MEMORY BLOCKS
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M29W160ET
M29W160EB
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PDF
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Untitled
Abstract: No abstract text available
Text: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ACCESS TIMES: 70, 90ns PROGRAMMING TIME – 10 s per Byte/Word typical 35 MEMORY BLOCKS
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M29W160ET
M29W160EB
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PDF
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MLP8 2x3mm
Abstract: MLP8 m25p64 MARKING code mf stmicroelectronics AN2043 SO8 NARROW Part Marking STMicroelectronics flash memory EEPROM 16Mb M25P stmicroelectronics eeprom M25P16
Text: Serial EEPROM, serial Flash and application specific serial non-volatile memories Selection guide February 2005 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties
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SGEEFLASH/1204
MLP8 2x3mm
MLP8 m25p64
MARKING code mf stmicroelectronics
AN2043
SO8 NARROW
Part Marking STMicroelectronics flash memory
EEPROM 16Mb
M25P
stmicroelectronics eeprom
M25P16
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PDF
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IEC61360-4
Abstract: EIA-724
Text: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical
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Original
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M29W160ET
M29W160EB
TSOP48
IEC61360-4
EIA-724
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PDF
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M29W160ET
Abstract: M29W160E M29W160EB TFBGA48 27-Nov-2002
Text: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical
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Original
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M29W160ET
M29W160EB
TSOP48
TFBGA48
M29W160ET
M29W160E
M29W160EB
TFBGA48
27-Nov-2002
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PDF
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Untitled
Abstract: No abstract text available
Text: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ACCESS TIMES: 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical 35 MEMORY BLOCKS
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Original
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M29W160ET
M29W160EB
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PDF
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Untitled
Abstract: No abstract text available
Text: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ACCESS TIME: 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical
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M29W160ET
M29W160EB
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PDF
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Untitled
Abstract: No abstract text available
Text: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY n SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read n ACCESS TIMES: 70, 90ns n PROGRAMMING TIME – 10 s per Byte/Word typical n 35 MEMORY BLOCKS
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M29W160ET
M29W160EB
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PDF
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M29W160EB
Abstract: M29W160E M29W160ET TFBGA48 2aa 555
Text: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIMES: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical ■ 35 MEMORY BLOCKS
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Original
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M29W160ET
M29W160EB
M29W160EB
M29W160E
M29W160ET
TFBGA48
2aa 555
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PDF
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Capella Microsystems
Abstract: Capella 399B IR-Laser-Diode CM1213
Text: 399B West Trimble Road, San Jose, CA 95131 USA • 408.382.6600 • FAX.408.382.6601 CM1213 Integrated PD+TIA DESCRIPTION FEATURES The Capella CM1213 PDIC is a low voltage integrated photodiode and transimpedence amplifier TIA for use as the photodetector in
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CM1213
CM1213
780nm)
Capella Microsystems
Capella
399B
IR-Laser-Diode
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PDF
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M29W160E
Abstract: M29W160EB M29W160ET TFBGA48
Text: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIMES: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical ■ 35 MEMORY BLOCKS
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Original
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M29W160ET
M29W160EB
M29W160E
M29W160EB
M29W160ET
TFBGA48
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PDF
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Untitled
Abstract: No abstract text available
Text: 3 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. D n 21 .OS ;.B30] B A AMP 1 4 7 1 -9 REV 31MAR2000 LOC DIST AF 50 REVISIONS LTR DESCRIPTION REV & A A OWN DATE REL PER 0 G 3 A - 0 0 5 3 - 0 3
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31MAR2000
14FEB03
03DEC2002
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