03D4501 Search Results

03D4501 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
snubber IGCT Abstract: ABB Semiconductors 5SYA1106-02 Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 320 5 2 1.5 2400 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 03D4501 Doc. No. 5SYA1106-02 Sep. 01 • Patented free-floating silicon technology • Low switching losses • Optimized to use as snubber and clamp diode in GTO and IGCT converters	Original	03D4501 5SYA1106-02 CH-5600 snubber IGCT ABB Semiconductors	PDF
snubber IGCT Contextual Info: Key Parameters VRRM = 4500 IFAVM = 320 IFRMS = 500 IFSM = 5 VF0 = 2.00 rF = 1.5 VDClink = 2400 V A A kA V Fast Recovery Diode 5SDF 03D4501 mΩ V Doc. No. 5SYA 1106-02 July 98 Features •Patented free-floating silicon technology •Low switching losses •Optimized to use as snubber and clamp diode in GTO and IGCT converters	Original	03D4501 CH-5600 snubber IGCT	PDF
IGCT Abstract: snubber IGCT Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 320 5 2 1.5 2400 V A kA V Fast Recovery Diode 5SDF 03D4501 mΩ V Doc. No. 5SYA 1106-02 Aug. 2000 • Patented free-floating silicon technology • Low switching losses • Optimized to use as snubber and clamp diode in GTO and IGCT converters	Original	03D4501 CH-5600 IGCT snubber IGCT	PDF
5SDF01R2501 Abstract: 5SGA 5SGA30J2501 RTK 031 Contextual Info: A S Y M M E T R I C _ G T Q T H Y R I S T O R S - ± X 0 GTO - Patentierter freier Druckkontakt. - Alle GTOs werden unter Ausschalt grenzwerten getestet. - Ausgezeichnete O ptimierung zwiscl Durchlass- und Schaltverlusten. - Spezifizierte Höhenstrahlungsfes	OCR Scan	01R2501 05D2501 05D2501 15F2502 20H2501 25H2501 30J2501 20H4502 11F2501 03D4501 5SDF01R2501 5SGA 5SGA30J2501 RTK 031	PDF
ABB GTO Abstract: stud type diodes fjs 500 Contextual Info: Fast Recovery Diodes ABB Semiconductors AG I - O ptim ized for fast and soft turn-off. Sm all reverse recovery charge. High d i/d t capability at turn-off. Range optim ally suited for G TO applications. O ptim iertes schnelles und weiches Ausschaltverhalten.	OCR Scan	05D2501 11F2S01 45x100 ABB GTO stud type diodes fjs 500	PDF
diode sy 170 Abstract: 26L4503 5SHX 14H4502 KN11 35L45 35l450 Contextual Info: I N T E G R A T E D G A T E - C O M M U T A T E D _ T H Y R I S T O R S - Patented free-floating silicon techno logy. - Patented low-inductance housing technology. - Optional snubberless operation. - Exceptionally low on-state losses.	OCR Scan		PDF
ABB 5SGA Abstract: 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502 Contextual Info: Asymmetrie GTO Thyristors ABB Semiconductors AG I Patented free-floating silicon technology. — All G TOs are turn-off tested under maxim um ratings. — Excellent trade-off between on-state and switching losses. T yp e and ordering num ber V DRM V DC V RRM •tGQM at C s	OCR Scan	15F2502 15F2502 05D2501 01R2501 20H2501 05D2501 11F2501 25H2501 ABB 5SGA 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502	PDF
GTO thyristor Curve properties Abstract: ABB 5SGY 35L4502 ABB 5SGy GTO thyristor ABB snubber IGCT ABB GTO gate unit gto dc converter abb GTO thyristor driver igct abb diode DS1 Contextual Info: ABB Semiconductors AG Section 3 SECTION 3 DATA SHEET USER’S GUIDE BY ANTON SCHWEIZER S 3-1 ABB Semiconductors AG Section 3 DATA SHEET USER’S GUIDE 3.1 GTOs Introduction This section is a detailed guide to proper understanding of a GTO data sheet. Parameters and ratings will be defined, and illustrated by	Original	30J4502 35L4502 GTO thyristor Curve properties ABB 5SGY 35L4502 ABB 5SGy GTO thyristor ABB snubber IGCT ABB GTO gate unit gto dc converter abb GTO thyristor driver igct abb diode DS1	PDF
FSV 052 Contextual Info: F A S T R E C O V E R Y _ D - I O D E S - O ptim iert für schnelles und weiches Ausschaltverhalten. - Kleine Speicherladung. - Hohes zulässiges d i/d t beim Aus schalten. - Vollständiges Sortiment für den Einsatz mit GTOs.	OCR Scan	05D2505 11F2501 07F4501 13H4501 5SDF14H4505 10H6004 01R2501 01R2502 01R2503 01R2504 FSV 052	PDF