03AUG2010 Search Results

Contextual Info: STAC4932B HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Excellent thermal stability • Common source push-pull configuration • POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz • Pulse conditions: 1 msec - 10%

STAC244

Abstract: drying oven STAC265F M252 substitution AN3232 C10100 M252 STAC265B seho
Contextual Info: AN3232 Application note Mounting recommendations for STAC boltdown packages Introduction RF power transistors are amongst the highest power density devices in the semiconductor industry. It is crucial to the reliability and performance of such devices to consider

MEC 1300

Abstract: STAC4932 STAC4932B 1000WF
Contextual Info: STAC4932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions : 1 msec - 10% ■ In compliance with the 2002/95/EC European

LE80536VC001512

Abstract: MPGA479 ITP700
Contextual Info: Intel Celeron® M Processor Datasheet June 2004 Order Number: 300302-003 IINFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN

Contextual Info: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 2 3 1 20 REVISIONS ALL RIGHTS RESERVED. BY - P LTR A 1 D 2 HOUSING RECEPTACLE HOUSING C CONTACTS EMI SPRINGS EMI GASKET DESCRIPTION DATE RELEASED ECO-14-002997 DWN APVD LAW 24MAR2014 SB

6B bRIDGE Rectifier

Abstract: E231047
Contextual Info: GBU6A ~ GBU6M 50 V ~ 1000 V 6.0 Amp High Current Glass Passivated Molding Single-Phase Bridge Rectifier Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen-free and RoHS Compliant GBU FEATURES       

d4kb

Abstract: BRIDGE-RECTIFIER small package
Contextual Info: D4KB10 ~ D4KB100 100 ~ 1000 V 4.0 Amp High Current Glass Passivated Molding Single-Phase Bridge Rectifier Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen-free and RoHS Compliant FEATURES      Plastic Package has Underwriters

Contextual Info: STODD01 Monolithic power management for high definition ODD with true shut-down, reset, and programmable step-up voltage Features • 1.2 MHz DC-DC current mode PWM converter ■ Dual step-down of up to 800 mA ■ Single step-up of up to 700 mA ■ 2 % DC output voltage tolerance for step-down

GRM21BR61A106KE19L

Abstract: GRM32ER61C226KE20L LPS4018-332MLB LPS6225-472MLB QFN16L swire 76533 ua731
Contextual Info: STODD01 Monolithic power management for high definition ODD with true shut-down, reset, and programmable step-up voltage Features • 1.2 MHz DC-DC current mode PWM converter ■ Dual step-down of up to 800 mA ■ Single step-up of up to 700 mA ■ 2 % DC output voltage tolerance for step-down

STAC4932

Abstract: STAC4932B 1715-3
Contextual Info: STAC4932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10% ■ In compliance with the 2002/95/EC European

D2KB80

Abstract: BRIDGE-RECTIFIER small package
Contextual Info: D2KB10 ~ D2KB100 100 ~ 1000 V 2.0 Amp High Current Glass Passivated Molding Single-Phase Bridge Rectifier Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen-free and RoHS Compliant FEATURES      Plastic Package has Underwriters

Contextual Info: STAC4932B HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Excellent thermal stability • Common source push-pull configuration • POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz • Pulse conditions: 1 msec - 10%

Contextual Info: TH I S D R A W I NG IS UNPUBLI S H E D . C O P Y R I G H T 2010 RELEASED BY TYCO ELECTRONICS CORPORATION ROR ALL P U B L I C A T I ON RIGHTS LOC R E V I S I ONS D I ST RESERVED. D E S C R I RTION BA NEW RELEASE 03 AUG2010 St.P RT FOR FURTHER INFORMATION SEE D A T A SHEET FOR

MEC 1300

Abstract: 2x100mA STAC244F
Contextual Info: STAC4932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10%

STAC4932

Abstract: STAC4932B
Contextual Info: STAC4932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10%

ua731

Abstract: GRM21BR61A106KE19L GRM32ER61C226KE20L LPS4018-332MLB LPS6225-472MLB QFN16L STMicroelectronics smd DIODE marking code smd 8 pin marking ma AM07818v1
Contextual Info: STODD01 Monolithic power management for high definition ODD with true shut-down, reset, and programmable step-up voltage Features • 1.2 MHz DC-DC current mode PWM converter ■ Dual step-down of up to 800 mA ■ Single step-up of up to 700 mA ■ 2 % DC output voltage tolerance for step-down

016-1 SYL

Abstract: AECQ100 ST662 ST662A ST662AB ST662ABD-TR ST662ABD-TRY ST662AC ST662ACD-TR
Contextual Info: ST662AB ST662AC DC-DC converter from 5 V to 12 V, 0.03 A for Flash memory programming supply Features • Output voltage: 12 V ± 5 % ■ Supply voltage range: 4.5 V to 5.5 V ■ Guaranteed output current up to 30 mA ■ Very low quiescent current: 100 µA