Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    02N TRANSISTOR Search Results

    02N TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    02N TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HT46R01B/02B/01N/02N HT48R01B/02B/01N/02N Small Package 8-Bit OTP MCU Technical Document • Application Note - HA0075E MCU Reset and Oscillator Circuits Application Note Features CPU Features · LIRC oscillator function for watchdog timer · Operating voltage:


    Original     		PDF HT46R01B/02B/01N/02N HT48R01B/02B/01N/02N HA0075E 12MHz: 12MHz 10-pin 16-pin

    Untitled

    Abstract: No abstract text available
    Text: HT46R01B/02B/01N/02N HT48R01B/02B/01N/02N Small Package 8-Bit OTP MCU Technical Document • Application Note - HA0075E MCU Reset and Oscillator Circuits Application Note Features CPU Features · LIRC oscillator function for watchdog timer · Operating voltage:


    Original     		PDF HT46R01B/02B/01N/02N HT48R01B/02B/01N/02N HA0075E 12MHz: 12MHz 10-pin 16-pin

    Untitled

    Abstract: No abstract text available
    Text: HT46R01B/02B/01N/02N HT48R01B/02B/01N/02N Small Package 8-Bit OTP MCU Technical Document • Application Note - HA0075E MCU Reset and Oscillator Circuits Application Note Features CPU Features · LIRC oscillator function for watchdog timer · Operating voltage:


    Original     		PDF HT46R01B/02B/01N/02N HT48R01B/02B/01N/02N HA0075E 12MHz: 12MHz 10-pin 16-pin

    HT48R01B

    Abstract: HT46R02B PWM PA5 HT46R01B ht48r01n HT48R01 HT-48
    Text: HT46R01B/02B/01N/02N HT48R01B/02B/01N/02N Small Package 8-Bit OTP MCU Technical Document • Application Note - HA0075E MCU Reset and Oscillator Circuits Application Note Features CPU Features · LIRC oscillator function for watchdog timer · Operating voltage:


    Original     		PDF HT46R01B/02B/01N/02N HT48R01B/02B/01N/02N HA0075E 12MHz: 12MHz 10-pin 16-pin HT48R01B HT46R02B PWM PA5 HT46R01B ht48r01n HT48R01 HT-48

    NSVS615

    Abstract: IC TX 434 MCF21 CDP-TX-02N rx module 434 rx 434 TRANSMITTER circuit diagram for telemetry base water level indicator tx 434 TRANSMITTER CDP-TX-02AN IC TX 434 433 fm
    Text: OPERATION GUIDE UHF Narrow band radio data module CDP-TX/RX-02N 434 MHz/458MHz Operation Guide Version 1.6 September 2003 CIRCUIT DESIGN, INC. 7557-1 Hotaka, Hotaka-machi, Minamiazumi, Nagano 399-8303 JAPAN Tel: + +81-(0)263-82-1024 Fax: + +81-(0)263-82-1016


    Original     		PDF CDP-TX/RX-02N Hz/458MHz CDP-02N CDP-TX-02N CDP-RX-02N NSVS615 IC TX 434 MCF21 rx module 434 rx 434 TRANSMITTER circuit diagram for telemetry base water level indicator tx 434 TRANSMITTER CDP-TX-02AN IC TX 434 433 fm

    PLESSEY CLA

    Abstract: gh160 FG48
    Text: FEBRUARY 1996 PRELIMINARY INFORMATION DS4375-1.1 CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION BENEFITS The CLA90000 series is the latest family of gate arrays from GEC Plessey Semiconductors GPS . It consists of 14 fixedsize arrays with the option of building larger optimized arrays


    Original     		PDF DS4375-1 CLA90000 PLESSEY CLA gh160 FG48

    microprocessors interface 8086 to 8251

    Abstract: USART 8251 interfacing with 8051 microcontroller to design a full 18*16 barrel shifter design USART 8251 18*16 barrel shifter design microprocessors architecture of 8251 USART 8251 expanded block diagram cqfp100 P2QFP100-GH-1420 full 18*16 barrel shifter design
    Text: CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS DS4375 - 2.0 April 1997 INTRODUCTION BENEFITS The CLA90000 family of gate arrays from Mitel Semiconductor consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million gates. This


    Original     		PDF CLA90000 DS4375 microprocessors interface 8086 to 8251 USART 8251 interfacing with 8051 microcontroller to design a full 18*16 barrel shifter design USART 8251 18*16 barrel shifter design microprocessors architecture of 8251 USART 8251 expanded block diagram cqfp100 P2QFP100-GH-1420 full 18*16 barrel shifter design

    P2QFP100-GH-1420

    Abstract: O2-A2 CQFP44 USART 8251 interfacing with 8051 microcontroller CQFP100 microprocessors interface 8086 to 8251 full 18*16 barrel shifter design P4QFP100-GH-1420 CLA90000 transistors for oscillators
    Text: CLA90000 Series High Density CMOS Gate Arrays DS5500 ISSUE 2.0 INTRODUCTION BENEFITS The CLA90000 family of gate arrays from Zarlink Semiconductor consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million gates. This


    Original     		PDF CLA90000 DS5500 P2QFP100-GH-1420 O2-A2 CQFP44 USART 8251 interfacing with 8051 microcontroller CQFP100 microprocessors interface 8086 to 8251 full 18*16 barrel shifter design P4QFP100-GH-1420 transistors for oscillators

    USART 8251 interfacing with 8051 microcontroller

    Abstract: full 18*16 barrel shifter design 18*16 barrel shifter design USART 8251 USART 8251 expanded block diagram 8251 UNIVERSAL SYNCHRONOUS ASYNCHRONOUS RECEIVER P4QFP100-GH-1420 interfacing 8051 with ppi USART 8251 interfacing M8490 scsi
    Text: CLA90000 Series High Density CMOS Gate Arrays DS5500 ISSUE 2.0 INTRODUCTZarlinkION BENEFITS The CLA90000 family of gate arrays from Zarlink Semiconductor consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million gates. This


    Original     		PDF CLA90000 DS5500 USART 8251 interfacing with 8051 microcontroller full 18*16 barrel shifter design 18*16 barrel shifter design USART 8251 USART 8251 expanded block diagram 8251 UNIVERSAL SYNCHRONOUS ASYNCHRONOUS RECEIVER P4QFP100-GH-1420 interfacing 8051 with ppi USART 8251 interfacing M8490 scsi

    transformer 220V to 24V

    Abstract: pw 380v 04 x
    Text: ø30 Series Switches & Pilot Lights Heavy duty switches & pilot lights offer both variety and reliability Endures harsh environments • Degree of protection: IP65 • UL, CSA approved, and EN compliant. Applicable Standards Mark File No. or Organization UL 508


    Original     		PDF E68961 LR21451 EN60947-5-1 GB14048 60947-olenoid transformer 220V to 24V pw 380v 04 x

    02N60S5

    Abstract: SMD TRANSISTOR MARKING 02N SPD02N60S5
    Text: SIEMENS SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity


    OCR Scan     		PDF SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 SPU02N60S5 P-T0251 02N60S5 Q67040-S4226 P-T0252 02N60S5 SMD TRANSISTOR MARKING 02N SPD02N60S5

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel / n, /S. / • Enhancement mode • Avalanche rated kX VPT09050 VP T0 90 5 1 Pin 1 Pin 2 Pin 3 G D S Type Vds b f î DS on (5) VGS Package Ordering Code SPD02N60 600 V 2A


    OCR Scan     		PDF SPD02N60 SPU02N60 VPT09050 P-T0252 Q67040-S4133 P-T0251 Q67040-S4127-A2

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SPP02N60S5 SPB02N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity


    OCR Scan     		PDF SPP02N60S5 SPB02N60S5 SPPx5N60S5/SPBx5N60S5 P-T0220-3-1 02N60S5 Q67040-S4181 P-T0263-3-2

    BFS67

    Abstract: 310M ft06 HSC5458 200S A190 A192 A193 A390 T072
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N P N 1 10. SILICON PNP 11. SILICON NPN LINE No. k I B H H TYPE No. ABSOiLOTE M A X . RATIINGS Ä 2 5 C II MIN. M A X Pc T 6 T T IDERATE FREE I'A E I Ic


    OCR Scan     		PDF NPN110. NPC214N NPC215N NPC216N SI212N BFS67 310M ft06 HSC5458 200S A190 A192 A193 A390 T072

    TIL78

    Abstract: SA2739 phototransistor OCP71 cm601 JAN2N491 photo transistor til78 til78 phototransistor CM602 FPN100 ft06
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C


    OCR Scan     		PDF NPN110. fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; TIL78 SA2739 phototransistor OCP71 cm601 JAN2N491 photo transistor til78 til78 phototransistor CM602 FPN100 ft06

    ITT 2222 A

    Abstract: itt 2222
    Text: Si GEC P L E S S E Y APRIL 1997 S E M I C O N D U C T O R S CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION BENEFITS The CLA90000 family of gate arrays from GEC Plessey Semiconductors GPS consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million


    OCR Scan     		PDF CLA90000 84-ACB-2828 144-ACB-4040 208-ACB-4545 209-ACB-4545 ITT 2222 A itt 2222

    TIL78

    Abstract: photo transistor til78 til78 phototransistor FPT100 phototransistor ft06 MRD100 OS13 phototransistor OCP71
    Text: S Y M B O L S & C O D E S E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE


    OCR Scan     		PDF

    2N4241

    Abstract: OC74 CM601 2N4042 BSV39 2N3523 bc143 BC222 TRANSISTOR ft06 200S
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C


    OCR Scan     		PDF NPN110. 12X084B 12X165 VCEO-15V hFE-30 ICBO-200mA PA-300mW; VCEO-55V; hFE-100 Pt-25W; 2N4241 OC74 CM601 2N4042 BSV39 2N3523 bc143 BC222 TRANSISTOR ft06 200S

    MM2102

    Abstract: BSW30 ft06 310M 200S A190 A192 A193 A390 T072
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. I I M IN . I DERATE J to C W /C M A X Pc T 6 T T FREE I'A E I


    OCR Scan     		PDF NPN110. B170024 4000n MM2102 BSW30 ft06 310M 200S A190 A192 A193 A390 T072

    ic sw01

    Abstract: sw01 analog switch sw01fq SW01 SW02FQ sw02b sw02 sw-01fq SW-01 sw01f
    Text: p m i S > W - O l / S W - 2 QUAD SPST JFET ANALOG SWITCHES TEMPERATURE COMPENSATED Ro n vs. analog input signals. The junction FET construction also reduces static discharge destruction prevalent in CMOS devices. FEATURES • • • • • • • •


    OCR Scan     		PDF SW-01 DG201, ADG201, LF11201 SW-02 DG202, LF11202, IH202 usetheSW-201 SW-01) ic sw01 sw01 analog switch sw01fq SW01 SW02FQ sw02b sw02 sw-01fq sw01f

    GM300

    Abstract: CM602 ft06 transistor C633 FSP400 2n1763 C621 DA402 2N2458 transistor c640 npn
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C


    OCR Scan     		PDF NPN110. THP172 TIS11 TIX690 Pc-50mW; BVCBO-50V BVGSS-30V Yfs-800umhos 500mW; TIX881 GM300 CM602 ft06 transistor C633 FSP400 2n1763 C621 DA402 2N2458 transistor c640 npn

    sw02b

    Abstract: SW02F sw01fq DG201 ADG201 SW-02FQ
    Text: SW -01/SW -02 QUAD SPST JFET ANALOG SWITCHES TEMPERATURE COMPENSATED R o n D&SBBB M o n o l i t h ic.s I vs. analog input signals. The junction FET construction also reduces static discharge destruction prevalent in CMOS devices. FEATU R ES • • •


    OCR Scan     		PDF -01/SW 300ns SW-01 SW-01/SW-02 100Mi usetheSW-201 SW-01) SW-202 SW-02; SW-201/202 sw02b SW02F sw01fq DG201 ADG201 SW-02FQ

    P2QFP100-GH-1420

    Abstract: IR 1838 3v with 3 pins
    Text: S i GEC P L E S S E Y s i; M i c o n i i c; r o DECEMBER 1996 r s DS4375-2.0 CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION BENEFITS The CLA90000 family of gate arrays from GEC Plessey Semiconductors GPS) consists of 14 fixed-size arrays with


    OCR Scan     		PDF DS4375-2 CLA90000 144-ACB-4040 208-ACB-4545 209-ACB-4545 84-ACB-2828 P2QFP100-GH-1420 IR 1838 3v with 3 pins

    Untitled

    Abstract: No abstract text available
    Text: 19-0271; RevO; 7/94 V M yjX I>kl Precision, 8-Channel/Dual 4-C hannel, H igh-Perform ance, CMOS Analog M u ltip lexers The MAX308/MAX309 are fabricated with Maxim’s improved 44V silicon-gate process. Design improve­ ments yield extremely low charge injection less than


    OCR Scan     		PDF MAX308/MAX309 DG408, DG409, DG508A, DG509A. MAX308/MAX309 MAX308 MAX309