02DEC08 Search Results

Contextual Info: 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. AUG ,2006. LOC ALL RIGHTS RESERVED. R E V IS IO N S DW P LTR DESCRIPTION B1 R E V IS E D E C R —0 8 — 0 3 0 4 1 4 DATE DWN APVD 02DEC08 sc WK D D NOTE :

B340LA

Contextual Info: B340LA Low VF Surface Mount Schottky Barrier Rectifiers REVERSE VOLTAGE 40VOLTS FORWARD CURRENT 3.0 AMPERE Features: *Low Surface Mounted Applications *Metal-Semiconductor Junction with Guardring *Epitaxial Construction *Very Low Forward Voltage Drop *High Current Capability

CAT9554

Abstract: CAT9555 MO-220 MS-013
Contextual Info: CAT9555 16-bit I²C and SMBus I/O Port with Interrupt FEATURES „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ DESCRIPTION 400kHz I²C bus compatible 2.3V to 5.5V operation Low stand-by current 5V tolerant I/Os 16 I/O pins that default to inputs at power-up High drive capability

led and phototransistor pair number

Abstract: led phototransistor pairs without optocoupler phototransistor HV vo217
Contextual Info: VO215AT, VO216AT, VO217AT Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current, with Base Connection FEATURES A 1 8 NC • High current transfer ratio K 2 7 B • Isolation test voltage, 4000 VRMS NC 3 6 C • Lead Pb -free component

RFW8021

Abstract: EVK8021 RFWaves Alternative DC-JACK Power Connectors
Contextual Info: Table of Contents Vishay RFWaves User Guide for EVK8021 - RFW8021 Evaluation Kit General .

AN609

Abstract: SiA906EDJ 69082
Contextual Info: SiA906EDJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

VOD223

Abstract: VOD233T VOD223T
Contextual Info: VOD223T Vishay Semiconductors Optocoupler, Photodarlington Output, Dual Channel, SOIC-8 Package FEATURES • High current transfer ratio at IF = 1 mA, 500 % minimum A 1 8C C 2 7E A 3 6C • Lead Pb -free component C 4 5E • Component in accordance to RoHS 2002/95/EC

4562 mosfet

Abstract: M 3211 4562 AN609 13544
Contextual Info: Si4160DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

Contextual Info: T H IS D R A W IN G IS C O P Y R IG H T U N P U B L IS H E D . 2003 BY ^ C O RELEASED E L E C T R O N IC S FO R ALL C O R P O R A T IO N . P U B L IC A T IO N R IG H T S APR ,2 0 0 3 . R E V IS IO N S RESERVED. NOTES: 1. MATERIAL HOUSING : CONTACTS : SHELL :

d connector screw lock torque

Abstract: 60JU L465 3-1634218-2
Contextual Info: T H IS D R A W IN G IS C O P Y R IG H T U N P U B L IS H E D . 2003 BY ^ C O RELEASED E L E C T R O N IC S C O R P O R A T IO N . FO R ALL P U B L IC A T IO N R IG H T S APR ,2 0 0 3 . R E V IS IO N S RESERVED. E LTR NOTES: F 1. MATERIAL HOUSING : CONTACTS :

Kycon KPPX-4P

Abstract: KPJX-4S KPJX-4S-S AMM150 EN61000-3-3 EN61000-4-2 EN61000-4-3 EN61000-4-4 AMM150PS24C2 KPPX-4P
Contextual Info: AC-DC 150 Watts xppower.com AMM150 Series • Energy Star Level V ≥15 V • CEC 2008 & EISA2007 Compliant • Worldwide Medical Approvals • Class I and Class II Versions • Optional AC Cable Restraint • Optional Output Connectors • Low Leakage Current

7483

Abstract: 9828 AN609
Contextual Info: Si7159DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

led and phototransistor pair number

Abstract: led phototransistor pairs without optocoupler VO211
Contextual Info: VO211AT, VO212AT, VO213AT Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package FEATURES A 1 8 NC K 2 7 B NC 3 6 C NC 4 5 E • Isolation test voltage, 4000 VRMS • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC

transistor c 6073

Abstract: mosfet 0018 AN609 Si7137DP
Contextual Info: Si7137DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

SiA911ADJ

Abstract: SiA911DJ SiA911DJ-T1-GE3
Contextual Info: Specification Comparison Vishay Siliconix SiA911ADJ vs. SiA911DJ Description: Package: Pin Out: Dual P-Channel, 20-V D-S MOSFET PowerPAK SC-70 Identical Part Number Replacements: SiA911ADJ-T1-GE3 replaces SiA911DJ-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Contextual Info: T H IS D R A W IN G C O P Y R IG H T IS U N P U B L IS H E D . 2003 BY ^ C O REUEASED EU E C TR O N IC S C O R P O R A T IO N . FO R AUU P U B U IC A T IO N R IG H T S APR ,2 0 0 3 - R E V IS IO N S RESERVED. E LTR F NOTES: 1. MATERIAL HOUSING : CONTACTS :

SI3865BDV

Abstract: Si3865BDV-T1-E3 69083 Si3865BDV-T1-E3 PACKAGE Si3865CDV
Contextual Info: Specification Comparison Vishay Siliconix Si3865CDV vs. Si3865BDV Description: Package: Pin Out: Load Switch with Level-Shift TSOP-6 Identical Part Number Replacements: Si3865CDV-T1-E3 replaces Si3865BDV-T1-E3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

C 5763 transistor

Abstract: c 5763 5763 AN609
Contextual Info: Si4158DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

SiA811ADJ-T1-GE3

Abstract: SiA811DJ SiA811DJ-T1-GE3 SiA811ADJ
Contextual Info: Specification Comparison Vishay Siliconix SiA811ADJ vs. SiA811DJ Description: Package: Pin Out: P-Channel, 20-V D-S MOSFET with Schottky Diode PowerPAK SC-70 Identical Part Number Replacements: SiA811ADJ-T1-GE3 replaces SiA811DJ-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Contextual Info: T H IS D R A W IN G C O P Y R IG H T S U N P U B L IS H E D . 2003 BY ^ C O REUEASED EU E C TR O N IC S C O R P O R A T IO N . FO R AUU P U B U IC A T IO N R IG H T S APR ,2 0 0 3 . R E V IS IO N S RESERVED. E LTR F NOTES: 1. MATERIAL HOUSING : CONTACTS :

Contextual Info: VOD223T Vishay Semiconductors Optocoupler, Photodarlington Output, Dual Channel, SOIC-8 Package FEATURES • High current transfer ratio at IF = 1 mA, 500 % minimum A 1 8C C 2 7E A 3 6C • Lead Pb -free component C 4 5E • Component in accordance to RoHS 2002/95/EC

AT91SAM9M10-EKES User Guide

Abstract: MT29F2G08ABDHC AT45D321D DM9161AEP lb043wq1 MT29F2G08ABD MT29F2G08AB 7SDMM-B0-2211 CFPS-39IB MT47H64M8CF
Contextual Info: AT91SAM9M10-EKES . User Guide 11029A–ATARM–11-Jan-10 1-2 11029A–ATARM–11-Jan-10 AT91SAM9M10-EKES User Guide Section 1 Introduction .1-1

B25 equivalent

Abstract: VOD223
Contextual Info: VOD223T Vishay Semiconductors Optocoupler, Photodarlington Output, Dual Channel, SOIC-8 Package FEATURES • High current transfer ratio at IF = 1 mA, 500 % minimum A 1 8C C 2 7E A 3 6C • Lead Pb -free component C 4 5E • Component in accordance to RoHS 2002/95/EC

VOD207T

Abstract: VOD205 VOD206T VOD217T VOD205T 21628 dual Phototransistor led phototransistor pairs without optocoupler VOD211T VOD213T
Contextual Info: VOD205T, VOD206T, VOD207T, VOD211T, VOD213T, VOD217T Vishay Semiconductors Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 Package FEATURES A1 8C • Two channel coupler C2 7E • SOIC-8 surface mountable package A3 6C C4 5E • Standard lead spacing of 0.05"