02JUL07 Search Results
02JUL07 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: THIS DRAWING IS UNPUBLISHED. WD COPYRIGHT - 6 7 8 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 4 2 3 - LOC ALL RIGHTS RESERVED. AD REVISIONS DIST 00 P LTR B DESCRIPTION DATE DWN 02JUL07 E C O —0 7 —0 0 9 0 8 APVD MB MS TERMINAL NUMBER SPECIFICATIONS |
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02JUL07 50MILLIAMPS@ 10MICROAMPS 26JAN06 31MAR2000 | |
Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FO R ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S - 2 , - RESERVED. C O R P O R A T IO N . LOC D IS T AD 00 REVISIO NS D E S C R IP T IO N F ECO —07- 02JUL07 |
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02JUL07 10MICR0AMPS@ 250VAC | |
Contextual Info: 3 4 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S 2 P U B L IC A T IO N R IG H T S RESERVED. C O R P O R A T IO N . LOC D IS T AD 00 REVISIO N S P LTR E 12.00 [.472] D 7 0 4 .0 0 [0.157] NOTE: TERMINAL NUMBERS ARE |
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02JUL07 UL94HB, FSM102 | |
Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T BY TYCO 2 3 E L E C T R O N IC S P U B L IC A T IO N R IG H T S - , - RESERVED. C O R P O R A T IO N . LOC D IS T AD 00 REVISIO NS D E S C R IP T IO N H 0 1 .3 0 3 . 0 0 D EEP |
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02JUL07 | |
Si4662DYContextual Info: New Product Si4662DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 18.6 0.014 at VGS = 4.5 V 15.7 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) 11 nC RoHS APPLICATIONS |
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Si4662DY Si4662DY-T1-E3 08-Apr-05 | |
195d SPRAGUE
Abstract: 195D
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EIA-481-1 08-Apr-05 195d SPRAGUE 195D | |
592D228X6R3X220H
Abstract: 592D
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EIA-481-1 535BAAC 08-Apr-05 592D228X6R3X220H 592D | |
B 503 Potentiometers
Abstract: potentiometer Sfernice
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P10XX 08-Apr-05 B 503 Potentiometers potentiometer Sfernice | |
JESD22-B102D
Abstract: J-STD-002B
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DO-201AD 2002/95/EC 2002/96/EC 08-Apr-05 JESD22-B102D J-STD-002B | |
68B50Contextual Info: New Product SUU/SUD50N04-16P Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a, c 0.016 at VGS = 10 V 20 0.018 at VGS = 4.5 V 20 VDS (V) 40 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested |
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SUU/SUD50N04-16P O-251 O-252 SUD50N04-16P-E3 SUU50N04-16P-E3 08-Apr-05 68B50 | |
Contextual Info: SiP4612A/B Vishay Siliconix Protected 1-A High-Side Load Switch DESCRIPTION FEATURES SiP4612A/B is a protected highside power switch. It is designed to operate from voltages ranging from 2.4 V to 5.5 V and handle a continuous current of 1 A. The user settable current limit protects the input supply voltage from |
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SiP4612A/B TSC75-6 08-Apr-05 | |
Marking 7133-1
Abstract: Si3424BDV-T1-E3 7133-1
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Si3424BDV Si3424BDV-T1-E3 08-Apr-05 Marking 7133-1 7133-1 | |
Contextual Info: BAS170WS-V Vishay Semiconductors Small Signal Schottky Diode Features • • • • • • Schottky diode for high-speed switching Circuit protection e3 Voltage clamping High-level detecting and mixing Lead Pb -free component Component in accordance to RoHS 2002/95/EC |
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BAS170WS-V 2002/95/EC 2002/96/EC OD323 GS18/10 GS08/3 BAS170WS-V-GS18 BAS170WS-V-GS08 08-Apr-05 | |
JESD22-B102D
Abstract: J-STD-002B UG06A UG06B UG06C UG06D
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UG06A UG06D MPG06 2002/95/EC 2002/96/EC 08-Apr-05 JESD22-B102D J-STD-002B UG06B UG06C UG06D | |
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ua712
Abstract: Si5915BDC
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Si5915BDC Si5915BDC-T1-E3 18-Jul-08 ua712 | |
B 103 Potentiometers
Abstract: 500R
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18-Jul-08 B 103 Potentiometers 500R | |
597D687X
Abstract: 597D 597D108X 597D336X 597D227X
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08-Apr-05 597D687X 597D 597D108X 597D336X 597D227X | |
Si4636DY
Abstract: Si4636DY-T1-E3 si4636
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Si4636DY Si4636DY-T1-E3 08-Apr-05 si4636 | |
Contextual Info: New Product Si7848BDP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)f 0.009 at VGS = 10 V 47 0.012 at VGS = 4.5 V 40 VDS (V) 40 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) COMPLIANT 15 nC APPLICATIONS |
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Si7848BDP Si7848BDP-T1-E3 08-Apr-05 | |
Contextual Info: New Product SUU/SUD50N04-08P Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.008 at VGS = 10 V 20 0.010 at VGS = 4.5 V 20 VDS (V) 40 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS |
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SUU/SUD50N04-08P O-251 O-252 SUD50N04-08P-E3 SUU50N04-08P-E3 08-Apr-05 | |
61209
Abstract: ptc application note PTCTT95R100GTE
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18-Jul-08 61209 ptc application note PTCTT95R100GTE | |
Contextual Info: New Product SiA917DJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 4.5a 0.185 at VGS = - 2.5 V - 4.5a • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® |
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SiA917DJ SC-70-6 SiA917DJ-T1-E3 08-Apr-05 | |
OZ 9910 a
Abstract: vishay spectrol 534 spectrol 534 32UNEF 500R BO10 spectrol model 534
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Turns/534: Turns/535: 08-Apr-05 OZ 9910 a vishay spectrol 534 spectrol 534 32UNEF 500R BO10 spectrol model 534 | |
Contextual Info: 20CTQ.PbF Series Vishay High Power Products Schottky Rectifier, 20 A FEATURES • 175 °C TJ operation Pb-free • Center tap TO-220 package • Low forward voltage drop • High frequency operation Base 2 common cathode Available RoHS* COMPLIANT • High purity, high temperature epoxy |
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20CTQ. O-220 O-220AB 12-Mar-07 |