0205A Search Results

Contextual Info: Tem ic 2N6851 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) -200 TDS(on) (ß ) 0.80 I d (A) -4.0 Parametric limits in accordance with M1L-S-19500I564 where applicable. T 0-205A F (TO-39) Ô D P-Channel MOSFF.T Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)

Contextual Info: Temic Siliconix_YP0808B/L/M, YP1008B/L/M P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number rDS on Max (Q) V(BR)DSS Min (V) VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M 5 @ V GS= 5 @ V GS= 5 @ V Gs = 5 @ V Gs = 5 @ V Gs = 5 @ V Gs =

C-Cube decoder

Abstract: MPEG-1 Encoder
Contextual Info: DVXPERT 5120/5140 MPEG VIDEO CODECS FOR BROADCAST-QUALITY INTERACTIVE VIDEO NETWORKING AND COMMUNICATION APPLICATIONS The DVxpert 5120 Video Networking codec from C-Cube Microsystems is the industry’s first full-duplex, real-time, MPEG-2 codec engine. It is specifically designed to meet the quality and performance requirements of today’s latency-sensitive

RCA 40408

Abstract: RCA-40406 rca 40411 40408 rca 40407 npn 40411 rca 40406 40406 40411 224Z
Contextual Info: Power Transistors File Number 40406, 40407, 40408, 40411 219 HARRIS SEMICOND SECTOR S?E D • M30S271 GG2Q103 5 H H A S T E R M IN A L D E S IG N A T IO N S Silicon N-P-N and P-N-P Power Transistors For A udio-A m plifier Applications Features: 40406 & 40407

Contextual Info: B u lle tin 12037 Internatiçnal E S Rectifier 4 sl R , 1 s e r ie s sok / l / k s (R) STANDARD RECOVERY DIODES Stud Version Features 150 A • Alloy diode ■ High current carrying capability ■ High voltage ratings up to 1000V ■ High surge current capabilities

Radiall R191 327

Contextual Info: TECHNICAL DATA Page 1 I 1 R191.405.500 BNC FEMALE - TNC MALE PUSH-ON STRAIGHT ADAPTER ADAPT s e rie s 0 1 4. 5 St r a i g h t knurled m olatage droit -C L. rin •* o in < ■s. n ■Q" 1.287 32.7 50 NOMINAL IMPEDANCE FREQUENCY RANSE 0-4 TEMPERATURE RATING

intel asm-96

Abstract: AP-483 sinusoidal ac waveform 4 phase stepper motor 1F42 diode wg 4 WG 130 8XC196MC 272181 PTS93
Contextual Info: AP-483 APPLICATION NOTE Application Examples Using the 8XC196MC MD Microcontroller MASANORI DOI GARY HARRIS EMBEDDED CONTROL August 1993 Order Number 272282-001 Information in this document is provided in connection with Intel products No license express or implied by estoppel or

DS100

Abstract: RFL4N12
Contextual Info: RFL4N12 RFL4N15 33 H a r r is N-Channel Enhancement-Mode Power Field-Effect Transistors A u g u st 1991 Package Features T O -2 0 5 A F • 4A, 120V and 150V • ros on = 0 .4 ft • SOA is Power-Dissipation Limited GATE SOURCE • Nanosecond Switching Speeds

A42 BF 331

Contextual Info: 12345634789A6BC 1DE48F75ECF34E87C2345C7D5E C9AA2 E 3F374C2!CC9"C#$%& 'EF34EC C12B96C2!C#$%#  F3 !" FB5#1333B9D7$936B62 'B 2AB9 3 !" 3

1N3293R

Abstract: 1N3289 1N3289R 1N3291 1N3291R 1N3293 1N3294 1N3294R 1N3295 1N3295R
Contextual Info: Military Silicon Power Rectifier Dim. Inches M illim eter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R S - - - - 1.040 1.060 1.166 4.65 .640 .233 .745 .373 .286 .670 .850 .120 26.6 7 2 6.92 29.61 118.11 16.25 5.66 18.92 9.47

1N2063

Abstract: 1N1671 1N404 1N4047 1n*049 LN2054 1N1660 1N1661 1N1670 1N3260
Contextual Info: Silicon Power Rectifier 1N4044—1N4056 Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R S Notes: 1. Full threads within 2—1 /2 threads 2. Standard polarity: Stud is Cathode Reverse polarity: Stud is Anode 1N1660 1N1661 1N1662

2N6898

Abstract: 2N6897 36485 2N6798 TRANSISTOR C 557 B 2n6800 2N6901 IDM30 2N6904 qpl-19500
Contextual Info: Standard Power M O SFETs File Number 1875 2N6897 Power M O S Field-Effect Transistors P-Channei Enhancement-Mode Power M O S Field-Effect Transistors 12 A, 100 V ros on : 0.3 0 TERMINAL DIAGRAM 3 o Features: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds

Bulletin

Contextual Info: Bulletin 12037 lite m a tio n a l [kw] Rectifier s e r ie s 45L R , is o k /l /ks(R) STANDARD RECOVERY DIODES Stud Version Features • 1 5 0 A Alloy diode ■ High current carrying capability ■ High voltage ratings up to 1 0 00V ■ High surge current capabilities

Contextual Info: ADS-193 □MTD5QJ 12-Bit, 1.0 MHz, Low-Power Sampling A/D Converter PRODUCT DATA FEATURES • • • • • • 12-Bit resolution Internal Sample/Hold 1.0 MHz minimum throughput Functionally complete Low-power, 1.3 Watts Samples to Nyquist INPUT/OUTPUT CONNECTIONS

250M

Abstract: IRFF220 IRFF221 IRFF222 IRFF223 T4 sm diode PD937
Contextual Info: HE 0 I MaSSMSZ 0GQT37Q Ö | Data Shçet No. PD-9.378E INTERNATIONAL R E C T I F I E R ' 7 -3 Ÿ -O Ÿ INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IOR IRFF220 IRFF221 IM-CHAIMIMEL POWER MOSFETs TQ-39 PACKAGE IRFFSSS IRFFSS3 Features: 200 Volt, 0.8 Ohm HEXFET

TRANSISTOR Y1D

Abstract: 2N3924 2n3924 equivalent
Contextual Info: MOTOROLA SC XSTRS/R b3b7554 00^403(3 3 •H0Tb MbE D F ^ MOTOROLA ■i SEM ICONDUCTOR i TECHNICAL DATA 3 3 -0 5 2N3924 The R F Lin e NPN SILICON RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR . . . optim ized A n n u la r tra n sisto r fo r larg e-sig n al pow eram p lifier and d riv e r ap p licatio n s to 300 MHz.

Contextual Info: TECHNICAL DATA Paga H2 I 1 R191.976.020 SilA FEMALE - R-MCX FEMALE STRAIGHT ADAPTER RACK.100 0.236 1 ADAPT series f 1a t 5 19.5) 50 NOMINAL IMPEDANCE 0-2 FREQUENCY RANEE -B5/+1S5 TEMPERATURE RATING 1-10 + V.S.W.R GHz 'C X F GHz)Hax i 0.05 RF INSERTJON LOSS

OF IC 7270

Contextual Info: Bulletin 12082/A International S Rectifier SD400N/R SERIES Stud Version STANDARD RECOVERY DIODES Features W id e c u rre n t range H igh v o lta g e ra tin g s up to 2 4 0 0 V H igh s u rg e c u rre n t c a p a b ilitie s S tud c a th o d e a n d s tu d a n o d e v e rs io n

Contextual Info: Bulletin 12019 lb. International SRectffier 130HF R s e rie s STANDARD RECOVERY DIODES Stud Version 130 A Features • H ig h c u rre n t c a rry in g c a p a b ility ■ H ig h s u rg e c u rre n t c a p a b ility ■ T y p e s up to 1 2 0 0 V V RBU ■

2N06

Contextual Info: 2 3 H a r r i s F L 2 N 0 5 R F L 2 N 0 6 N-Channel Enhancement-Mode Power Field-Effect Transistors A u g u s t 1991 Features • R Package 2A, 50V and 60V T O -20 5 A F • RDS on = 0 .9 5 n • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds

CD Mode

Abstract: 7476 counter 80C152 270645 AN 429 C082 johnson controls 80C51BH C152 embedded controller handbook
Contextual Info: AP-429 APPLICATION NOTE Application Techniques for the 83C152 Global Serial Channel in CSMA CD Mode BOB JOHNSON Embedded Control Applications Engineering May 1989 Order Number 270720-001 Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or copyright for sale and use of Intel products except as provided in

Contextual Info: 4 3 0 5 2 7 1 □ □ 5 4 5 ci? tBT • H a r r is HAS IR F F 9120, IR F F 9121 IR F F 9122, IR F F 9123 Avalanche Energy Rated P-Channel Power MOSFETs January 1994 Features Package T 0 -2 0 5 A F • -3.5 A and -4A , -8 0 V and -1 0 0 V BOTTOM VIEW • rDS ON = o .e o n and 0.80 H

D634

Contextual Info: Bulletin 12065/A International SRectifier SD253N/R SERIES Stud Version FAST RECOVERY DIODES Features • High power FAST recovery diode series ■ 1.5 to 2.0 |js recovery time ■ High voltage ratings up to 1600V ■ High current capability ■ Optimized turn on and turn off characteristics

ic 4588

Contextual Info: 2 RFL1N08 RFL1N10 h a r r is N -C h a n n e l E n h an ce m e n t-M o d e Pow er F ie ld -E ffe c t Transistors August 1991 Package F e a tu re s T O -2 0 5 A F • 1A, 80 V and 100V • RD S on = 1 -2 f i • S O A is P ow er-D issip atio n Limited • N anosecond Switching S peeds