01MAR10 Search Results

ROSIN FLUX TYPE ROL0

Abstract: FLUX TYPE ROL0 CTL5227-074-019 01-Mar-10 5103308-1
Contextual Info: 501-325 Qualification Test Report 01Mar10 Rev A All Paragraphs Revised AMP-LATCH* and IDC Header Connectors, .100 X .100 Inch Grid 1. INTRODUCTION 1.1. Purpose Testing was performed on AMP-LATCH* and IDC Header Connectors to determine their conformance to the requirements of Product Specification 108-40018, Revision E.

EIA-364-29

Abstract: EIA-364-20 EIA-364-21 EIA-364-31 EIA-364-32 01-Mar-10
Contextual Info: Product Specification 108-40018 01Mar10 Rev E AMP-LATCH* and IDC Header Connectors, .100 X .100 Inch Grid 1. SCOPE 1.1. Content This specification covers performance, tests and quality requirements for AMP-LATCH* universal and low profile, and IDC standard and low profile .100 X .100 inch grid headers, right angle and vertical

thermistor ntc

Abstract: E78996 bridge UPS circuit diagram pcb 50mt060whta 50MT060WHTAPB
Contextual Info: 50MT060WHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP Warp Speed IGBT , 114 A FEATURES • Generation 4 warp speed IGBT technology • HEXFRED antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses • Optional SMD thermistor (NTC)

Contextual Info: 50MT060WHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP Warp Speed IGBT , 114 A FEATURES • Generation 4 warp speed IGBT technology • HEXFRED antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses • Optional SMD thermistor (NTC)

full bridge driver 600v

Abstract: 20MT120UFP ultrafast igbt S610A
Contextual Info: 20MT120UFP Vishay High Power Products "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

SQ4401DY-T1-GE3

Contextual Info: SQ4401DY Vishay Siliconix Automotive P-Channel 40 V D-S 150 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 40 RDS(on) (Ω) at VGS = - 10 V 0.014 • TrenchFET Power MOSFET RDS(on) (Ω) at VGS = - 4.5 V

40MT120UHAPBF

Abstract: ultrafast igbt 40MT120UHAP
Contextual Info: 40MT120UHAPbF, 40MT120UHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP Ultrafast NPT IGBT , 80 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • Square RBSOA

SQ4850EY-T1-GE3

Abstract: C40r SQ4850EY-T1_GE3
Contextual Info: SQ4850EY Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) (Ω) at VGS = 10 V 0.022 • TrenchFET Power MOSFET RDS(on) (Ω) at VGS = 4.5 V 0.031

65890

Contextual Info: SPICE Device Model Si5906DU Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

AN609

Abstract: IRF540S SiHF540S
Contextual Info: IRF540S_RC, SiHF540S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

SQD50P06-15L-GE3

Abstract: SQD50P06-15L
Contextual Info: SQD50P06-15L Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 60 RDS(on) (Ω) at VGS = - 10 V 0.015 RDS(on) (Ω) at VGS = - 4.5 V 0.020 ID (A) • TrenchFET Power MOSFET

S100476

Contextual Info: SPICE Device Model SiR846DP Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiA425EDJ Vishay Siliconix Dual P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: V ishay I ntertechn o l o g y, I nc . I INNOVAT AND TEC O L OGY CMB 0207 N HN MELF RESISTOR O 19 62-2012 Resistors - Special Carbon Film Technology High Pulse Load MELF Resistor Key Benefits • Approved to the safety requirements of IEC 60065, 14.1.a* = VDE 0860, 14.1.a ,

CVCO45CL-0900-0940

Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP MAX UNITS 900 MHz 4.5 VDC 5.0 5.25 VDC +3.0 dBm Lower Frequency: Upper Frequency: 940 Tuning Voltage: 0.5 Supply Voltage: 4.75 Output Power: -3.0 Supply Current: MHz 17 nd mA Harmonic Suppression 2 Harmonic :

igbt with 339 ic

Contextual Info: 40MT120UHAPbF, 40MT120UHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP Ultrafast NPT IGBT , 80 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • Square RBSOA

Contextual Info: 50MT060ULSTAPbF Vishay High Power Products "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses

40MT120UHAPBF

Contextual Info: 40MT120UHAPbF, 40MT120UHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP Ultrafast NPT IGBT , 80 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • Square RBSOA

Si4712

Abstract: Si4712DY
Contextual Info: SPICE Device Model Si4712DY Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

4026 datasheet

Abstract: AN609 IRF530 SiHF530 IRF530R
Contextual Info: IRF530_RC, SiHF530_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

SQJ456EP-T1-GE3

Abstract: SQJ456EP
Contextual Info: SQJ456EP Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) at VGS = 10 V 0.028 RDS(on) (Ω) at VGS = 6 V 0.033 ID (A) 9.1 Configuration Single D PowerPAK SO-8L Single m 5m 6.1 • Halogen-free According to IEC 61249-2-21

Contextual Info: 20MT120UFP Vishay High Power Products "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

rmkht0805

Abstract: sfernice
Contextual Info: RMKHT CNHT Vishay Sfernice High Temperature (215 °C) Wirebondable Chip Resistors and Resistor Networks FEATURES • Operating temperature range: - 55 °C; + 215 °C • Storage temperature: - 55 °C; + 230 °C • Wirebondable (aluminum pads) • Large selection of sizes available

vishay 0207

Abstract: DIN iec 286-3 part 1 IEC 61760-1 IEC 60062 4K7 1 melf vishay melf CMB 0207
Contextual Info: CMB 0207 Vishay Beyschlag High Pulse Load MELF Resistors FEATURES REG.-Nr. B583 CMB 0207 specialty MELF resistors with advanced pulse load capability are the perfect choice for the protection of circuitry with signal and mains input lines from surge pulses.