00B231B Search Results

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM4951-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • H i g h power • PidB = • High gain dBm at 4.9 GHz to 5.1 GHz

IT 715 triac

Abstract: BT139 715 triac 1139G iron bh curve TRIAC TAG e3
Contextual Info: PHILIPS INTERNATIONAL bSE ì> B 711DÔSb DDfc.53G7 ITP I PHIN BT139 SERIES TRIACS Glass-passivated 16 ampere triacs intended fo r use in applications requiring high bidirectional transient and blocking voltage capability, and high thermal cycling performance w ith very low thermal resistances,

TAG 84 triac

Abstract: triac BT 140 TRIAC BT 139 TRIAC TAG 90 bt139 BT139G TRIAC TAG 96 bt139 Application BT139 Series E M1646
Contextual Info: PHILIPS INTERNATIONAL bSE » B 711DÖSL 00L.2307 ITO I BT139 SERIES TRIACS Glass-passivated 1 6 am pere triacs intended fo r use in applications requiring high b id irectio n a l tran sien t and b locking voltage c a p a b ility , and high th erm al cycling perform an ce w ith very lo w th erm al resistances,

Contextual Info: 33 HiSKVS HCS112MS Radiation Hardened DllSl JK Flip-Flop September 1995 Features • Pinouts 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16, LEAD FINISH C TOP VIEW 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si)