2SA825
Abstract: 2SA825S
Text: ROHM CO LTD • 4 0 E 7ä2öciclt:l 00QS3ÔÔ « T M R H M » 2SA825/2SA825S h 7 > v X £ / T ransistors - T -2 7 -Ö PN P y >; □ > h 7 > V X £ 2 3 Ü I 1 2 5 X t°^ ^ y r ;U7° u 2 S A 8 2 3 S ^ ^ ^ / - n e r a l Small Signal Amp. Epitaxial Planar P N P Silicon Transistors
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2SA825/2SA825S
2SA825
2SA825S
SC-43
2SA825
2SA825S
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K2665
Abstract: No abstract text available
Text: I^U-X JV7 - M O S F E T -H SERIES POWER MOSFET X > A > 7> *> h O U T L IN E D IM E N S IO N S Case : STO -220 F3S90H V X2 4.6 ±0.2 10.2 02 900V 3a 1.3:±0.2 _ Date code iiST F (HH) 57 I E IA J No. 2.4- 0-3 K2665 0.1*01 ° I M ( p " Gate © (4 ) : Drain
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F3S90H
K2665
00QS303
2SK2665
F3S90HVX2)
K2665
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Untitled
Abstract: No abstract text available
Text: Tem ic HM 65756 MATRA MHS 32 K x 8 High Speed CMOS SRAM Introduction The HM 65756 is a high speed CMOS static RAM organised as 32,768 x 8 bits. It is manufactured using MHS’s high performance CMOS technology. Easy memory expansion is provided by an active low chip
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HM-65756
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Westinghouse thyristor
Abstract: P214PH06FJ0
Text: WESTCODE SEMICONDUCTORS 3TE S • 0002303 S ■ IdESB j" */9 Technical Publication W ESTCO D E $ SEMICONDUCTORS TP214P Issue 1 November 1984 Inverter Grade Stud-Base Thyristor Type P214P 195 amperes average: up to 800 volts V rrm IV Drm R a t i n g s Maximum values at 125°C Tj unless stated otherwise
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0DD23D3
P214P
TP214P
-16UNF-ZAâ
Westinghouse thyristor
P214PH06FJ0
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MB1410
Abstract: a60l
Text: June1992 Edition 1.0 DATA S H E E T FUJITSU : M B 8 1 4 1 0 1 A -60U -70U -80L CM O S 4 M X 1 B IT NIBBLE M O D E LO W PO W ER DRAM CMOS 4M x 1 bit Nibble Mode Low Power Dynamic RAM The Fujitsu MB814101A is a fully decoded CMOS Dynamic RAM DRAM that contains a total of
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June1992
MB814101A
048-bits
MB814101A-60L/-70L/-80L
F26001S-3C
MB814101A-60L
MB814101A-70L
MB814101A-80L
26-LEAD
MB1410
a60l
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Untitled
Abstract: No abstract text available
Text: F I Standard Product PMC-941033 ISSUES ^ I V i r " 1 PMC-Sierra, Inc. I V 1 ^ » _ _ , PM5347 S/UNI-PLUS SATURN USER NETWORK INTERFACE 155 Mbit/s&51 Mbit/s, 'PLUS' FE A TU R E S • Monolithic Saturn User Network Interface that implements the ATM physical layer
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PMC-941033
PM5347
000545b
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Untitled
Abstract: No abstract text available
Text: 3SE D SUPERTEX INC • a ? 7 3 2 ‘ïS 000533^ t, ■ / tpn P-Channel Enhancement-Mode ^ Vertical DMOS FETs STX T- 39- OI Ordering Information Standard Commercial Devices t O rd er N um b er / Package BVdss/ R d S ON ' d (ON) b v dos (m ax) (m in) -160V
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-160V
-200V
O-220
VP1116N2
VP1116N5
VP1116ND
VP1120N2
VP1120N5
VP1120ND
VP11C
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EL7134CN
Abstract: EL7134C EL7134CS hjb surface mount QCX0002 DD053
Text: EL7134C élantec EL7134C High Sp< I d, lliuh Vurn-nt. Lint lir iiv r u 3-Stah HIGH P E R K R M A S C E A N A ia a •TEGfiATEC CIBCJITS F e a tu re s G en era l D e sc r ip tio n • • • • • • • • • The EL7134C 3-state driver is particularly well suited for ATE
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EL7134C
EL7134CN
MDP0031
EL7134CS
MDP0027
EL7134C
EL7134CN
hjb surface mount
QCX0002
DD053
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PDF
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EL7134C
Abstract: EL7134CN EL7134CS QCX0002 hjb surface mount
Text: EL7134C élantec EL7134C High Sp< I d, lliu h V urn-nt. L in t l i r i i v r u 3-S ta h HIGH P E R K R M A S C E A N A ia a •TEGfiATEC CIBCJITS F e a tu re s G en era l D e sc r ip tio n • • • • • • • • • The EL7134C 3-state driver is particularly well suited for ATE
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EL7134C
RMASCEANA135
EL7134CN
MDP0031
EL7134CS
MDP0027
Descriptio16
00055L1
EL7134C
EL7134CN
QCX0002
hjb surface mount
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LASCR
Abstract: 7493 mod 12 counter diagram hy534256s hy534256 IRP02 7493 counter as mod 12 counter
Text: H Y 5 3 4 2 5 6 »HYUNDAI S e r ie s 256KX 4-bit CMOS ORAM DESCRIPTION The HY534256 is the new generation and fast dynamic RAM organized 262,144 x 4-bits. The HY534256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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HY534256
300mil
powe37)
3008SC
4b750flfl
1AB03-30-MAY94
LASCR
7493 mod 12 counter diagram
hy534256s
IRP02
7493 counter as mod 12 counter
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ECG1402
Abstract: No abstract text available
Text: PHILIPS EC G INC 17E 1^53=123 0 0 0 5 3 ^ 1 ECG1402 Electronic Channel Selector Circuit Sem iconductors Features • Simplifies selection circuit up to 16 channels • Clock oscillator, input control, up-down counter and decoder circuit • Remote control electronic channel selec
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ECG1402
T-77-07-05
Symb13
012/jF
ecg1402
egg1402
bS31Sfl
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2SK376
Abstract: DDD3710 VLN 2003a
Text: SANYO SEMICONDUCTOR CORP 1B E » 1 i m U l h 0D0S3Û0 2SK376 N-Channel Junction Silicon Field-Effect Transistor 2037 1432A Capacitor Microphone Impedance Conversion Applications Features . Especially suited for use in audio, telephone capacitor microphones.
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0D053Ã
2SK376
2SK376
0DGB752
DDD3710
VLN 2003a
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Untitled
Abstract: No abstract text available
Text: •SUPER BRIGHT LED ▼FLUSH MOUNT LED LAMP Peak P re- Shape Type No. Lens Emitted f§ J § jJ ^ |l| /ip nm • BR 3864X Red • M PR 3864X j9 • M A A 3864X <t> 3 // // / Pastel Red • M V R 3864X O range Pastel Orange Li-m n o u i IntO'-'C-iv Iv in:r-ri-
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3864X
PY3864X
00QS37M
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gp019
Abstract: GP-019 Allegro A8902 A8902 A8902SLB A8903SLB Q50H
Text: ALLEGRO MI CROSYSTEMS INC 33E D QS0M33Ô 0 GGS 3 2 4 8902 8903 4 • ALGR AND r r s z - i 3-PH ASE B R V SH LESS D C MOTOR C ONTROLLER/DRIVERS W ITH BACK-EM F SEN SIN G The A8902SLB and A8903SLB are three-phase DMOS back-EMF sensing spindle motor drivers for use in 5 V and 12 V Winchester disc
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PP-040A
A8903SLB.
A8902/03SLB
EP-036A
gp019
GP-019
Allegro A8902
A8902
A8902SLB
A8903SLB
Q50H
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