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    Infineon Technologies AG IPT007N06NATMA1

    MOSFET N-CH 60V 300A 8HSOF
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    Infineon Technologies AG IPTG007N06NM5ATMA1

    MOSFET N-CH 60V 53A/454A HSOG-8
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    Infineon Technologies AG IPTC007N06NM5ATMA1

    TRENCH 40<-<100V
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    Infineon Technologies AG ISC007N06NM6ATMA1

    TRENCH 40<-<100V
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    Infineon Technologies AG IPT007N06N

    MOSFETs TRENCH 40<-<100V
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    Mouser Electronics IPT007N06N 10,233
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    007N06N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-Transistor,60V 007N06N DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSTMPower-Transistor,60V 007N06N 1Description HSOF Features Tab •100%avalanchetested


    Original
    IPT007N06N IEC61249-2-21 PDF

    Untitled

    Abstract: No abstract text available
    Text: 007N06N OptiMOSTM Power-Transistor Product Summary Features • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant VDS 60 V RDS on),max


    Original
    IPT007N06N IEC61249-2-21 007N06N PDF

    IPT007N06N

    Abstract: f150at IPT00 d150 fet 007N06N
    Text: 007N06N OptiMOSTM Power-Transistor Product Summary Features • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant VDS 60 V RDS on),max


    Original
    IPT007N06N IEC61249-2-21 007N06N IPT007N06N f150at IPT00 d150 fet 007N06N PDF

    007N06N

    Abstract: No abstract text available
    Text: 007N06N OptiMOSTM Power-Transistor Product Summary Features • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant VDS 60 V RDS on),max


    Original
    IPT007N06N IEC61249-2-21 007N06N 007N06N PDF