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    Littelfuse Inc 0521004.MAT1L

    PICO FUSE BOARD MOUNT
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    DigiKey 0521004.MAT1L Cut Tape 3,993 1
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    0521004.MAT1L Ammo Pack 3,000 1,000
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    Newark 0521004.MAT1L Bulk 1,000
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    Littelfuse Inc 0473004.MAT1L

    FUSE BRD MNT 4A 125VAC/VDC AXIAL
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    DigiKey 0473004.MAT1L Cut Tape 965 1
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    0473004.MAT1L Ammo Pack 1,000
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    Newark 0473004.MAT1L Bulk 1,000
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    Ozdisan Elektronik 0473004.MAT1L
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    TE Connectivity A1004MA22P0

    THERM SENSOR 10K
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    DigiKey A1004MA22P0 Bulk 23
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    Richardson RFPD A1004MA22P0 1
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    Avnet Abacus A1004MA22P0 143 Weeks 1
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    Littelfuse Inc 0251004.MAT1

    FUSE BRD MNT 4A 125VAC/VDC AXIAL
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    DigiKey 0251004.MAT1 Ammo Pack 1,000
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    Siemens 3SB20004MA01

    CONFIG SW BODY KEYLOCK NON-ILLUM
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    DigiKey 3SB20004MA01 Box 1
    • 1 $132.36
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    Mouser Electronics 3SB20004MA01
    • 1 $125.79
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    004MA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    STRAIN GAUGE

    Abstract: 0-200mV tare "strain gauge" 10VA V430 led digital panel amp volt meter isolated 4 to 20ma analog transmitter circuit visipak ohms meter panel
    Text: VISIPAKTM V434 Bridge/Strain Gauge Input, Digital Indicator Provides a Digital Display from Bridge & Strain Gauge mV Inputs Description Benefits Field Configurable Input Accepts 0-30mV, 0-200mV, + 15mV and +100mV Field Configurable Excitation Source 5V, 10V & 24VDC


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    0-30mV, 0-200mV, 100mV 24VDC 004mA V434-0000 V434-1000 V434-2000 4-20mA V434-3000 STRAIN GAUGE 0-200mV tare "strain gauge" 10VA V430 led digital panel amp volt meter isolated 4 to 20ma analog transmitter circuit visipak ohms meter panel PDF

    Untitled

    Abstract: No abstract text available
    Text: REV. 2.1 FS8802-DS-21_EN Datasheet FS8802 High Efficiency Low Start-up Voltage Step-up DC-DC Converter SEP 2006 FS8802 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan


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    FS8802-DS-21 FS8802 FS88rallel. MS-012 006in) 010in) PDF

    E43028

    Abstract: NC2EBD-DC12V NC2D-JP-DC48V NC2-PS DC 3V relay 0.5A 220v ac DC 5V to DC 100V CIRCUIT DIAGRAM NC4D-JP-DC12V NC2EBD-DC24V NC2D-JP-DC12V NC2D-JP-DC24V
    Text: NC Transistor drive 2c/4c 5A slim power relays NC4 Flat type PC board type NC2 Flat type (PC board type) NC4 Slim type (Plug-in type) NC2 Slim type (PC board type) NC RELAYS FEATURES TYPICAL APPLICATIONS 1. Compact, slim design Use of high-performance flat


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    PDF

    nc2d-p-ac24v

    Abstract: NC2D-P-AC12V NC2D-JP-DC48V NC2D-AC100V 500va sine wave ups NC2D-JP-DC12V NC2D-JP-DC24V NC4D-AC100V NC2EBD-JP-DC24V NC2EBD-JP-DC12V
    Text: NC 4 Form C Flat type 2 Form C Flat type 4 Form C Slim type PC board 2 Form C Slim type (PC board) FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT NC RELAYS FEATURES TYPICAL APPLICATIONS 1. Compact, slim design Use of high-performance flat electromagnetic design achieves


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    011010D nc2d-p-ac24v NC2D-P-AC12V NC2D-JP-DC48V NC2D-AC100V 500va sine wave ups NC2D-JP-DC12V NC2D-JP-DC24V NC4D-AC100V NC2EBD-JP-DC24V NC2EBD-JP-DC12V PDF

    3SB23 04-2A siemens

    Abstract: 3SB24 3SB12 01 3ta21 siemens IEC 60947 VDE 0660 3SB14 00-0C siemens 3SB36 Sirius 3SB3 3SB14 3sb29
    Text: Commanding and Signaling Devices Introduction • Overview 3SB2 3SB30, 3SB32 3SB31, 3SB33 3SB35, 3SB36 16 mm Plastic, round 22 mm Plastic, round 22 mm Plastic, square 22 mm Metal, round ✔ ✔ -✔ ✔ ✔ ✔ ✔ ✔ ✔ ✔ -✔ ✔ ✔ ✔ ✔ ✔ ✔


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    3SB30, 3SB32 3SB31, 3SB33 3SB35, 3SB36 8WD44 58-6XB 58-6XC 3SB23 04-2A siemens 3SB24 3SB12 01 3ta21 siemens IEC 60947 VDE 0660 3SB14 00-0C siemens 3SB36 Sirius 3SB3 3SB14 3sb29 PDF

    V438

    Abstract: visipak led moving message display circuits c action instruments visipak V438-0000 digital Water Meter V438-3000 Eurot 10VA Eurotherm
    Text: VISIPAK V438 TM DC Input Digital Indicator Provides a Digital Display of Process Variables from DC Voltage and Current Inputs Description Benefits Field Configurable Input 4-20mA, 1-5V, 0-5V& 0-10V 4½ Digit Display for +199990 Count Spans 4 Visual Alarm Points with


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    4-20mA, 4-20mA 24VDC 004mA V438-0000 V438-1000 V438-2000 V438-3000 V438 visipak led moving message display circuits c action instruments visipak V438-0000 digital Water Meter V438-3000 Eurot 10VA Eurotherm PDF

    Untitled

    Abstract: No abstract text available
    Text: Fo r tun e FS8802 Semiconductor Corporation 富晶半導體股份有限公司 High Efficiency Low Start-up Voltage Step-up DC-DC Converter Features General Description 1.0V Low Start-up Input Voltage at 1mA Load Deliver 3.3V at 100mA with 1V Input Voltage


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    FS8802 100mA 550KHz FS8802 400mA 015X45Â MS-012 006in) 010in) TD-0404010 PDF

    schematic diagram converter input 24v to 12v

    Abstract: FS8802CS
    Text: Fo r tun e FS8802 High Efficiency Low Start-up Voltage Step-up DC-DC Converter Semiconductor Corporation 富晶半導體股份有限公司 General Description Features The FS8802 is a compact, high-efficiency, step-up DC/DC converter that operates from an


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    FS8802 400mA 100mA 550KHz 015X45° MS-012 006in) 010in) schematic diagram converter input 24v to 12v FS8802CS PDF

    visipak

    Abstract: action instruments visipak 4-20ma DIGITAL CURRENT SOURCE V430-0000 V430-2000 V430 V430-3000 10VA 0-20mA 0.5V 4-20ma controller
    Text: VISIPAKTM V430 Analog Input, Rate Indicator/Totalizer/ Batch Controller Provides a Digital Display of Rate or Totalized Count from a DC Current or Voltage Input Description Benefits Field Configurable Input: 4-20mA, 1-5V, 0-5V, or 0-10V 6 Digit Display for Counts


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    4-20mA, V430-0000 V430-1000 V430-2000 4-20mA V430-3000 115VAC 741-F 721-0695-00-F visipak action instruments visipak 4-20ma DIGITAL CURRENT SOURCE V430-0000 V430-2000 V430 V430-3000 10VA 0-20mA 0.5V 4-20ma controller PDF

    nc4ebd-jpl2-dc12v

    Abstract: NC2D-JPL2-DC48V NC2D-JPL2-DC24V nc2d-jp-dc24v NC2D-JP-DC48V NC2D-JP-DC12V 384MH NC4EBD-L2-DC100V 173MH
    Text: NC FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT 4 Form C Flat type 2 Form C Flat type 4 Form C Slim type PC board 2 Form C Slim type (PC board) NC RELAYS FEATURES TYPICAL APPLICATIONS 1. Compact, slim design Use of high-performance flat electromagnetic design achieves


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    PDF

    ic tba 220

    Abstract: km6161002j KM6161002-17
    Text: SAMSUNG ELEC T R O N I C S INC b7E D • □ □ 1 7 b clö SID SriGK PRELIMINARY KM6161002 CMOS SRAM 65,536 WORD x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL)


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    KM6161002 KM6161002J-15: 230mA KM6161002J-17: 220mA KM6161002J-20: 210mA KM6161002J: 44-Pin Q0177DS ic tba 220 km6161002j KM6161002-17 PDF

    TI41

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D m 7^4142 KM64B258A 0017500 ITT SMGK BiCMOS SRAM 65,536 WORD x 4 Bit With OE High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12ns (max.) • Low Power Dissipation Standby (TTL) : 110mA (max.)


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    KM64B258A 110mA KM64B258AJ-8: 185mA KM64B258AJ-10: 175mA KM64B258AJ-12: 165mA KM64B258AJ: 28-pin TI41 PDF

    Untitled

    Abstract: No abstract text available
    Text: M O SE L V IT E L IC V62C21162048 128K x 16 LOW POWER, LOW VOLTAGE SRAM PRELIMINARY INFORMATION Features Description • ■ ■ ■ ■ ■ ■ ■ The V 62C 21162048 is a 2,097,152-bit static random-access memory organized as 131,072 words by 16 bits. Inputs and three-state outputs are


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    V62C21162048 152-bit 44-pin 75TYP PDF

    1N21A

    Abstract: IN23B 1N22WB 1N23B 1N21D 1n21 1N21B 1n21br 1N23C 1N21BM
    Text: 165- £ M « 1N21 1N21A 1N21B 1N21BM 1N21BMR 1N21BR 1N21C 1N21 CM 1N21CMR 1N21CR 1N21D 1N21 DM 1N21DMR 1N21DR 1N21B 1N21EM 1N21EMR 1N21ER 1N21F 1N21FM 1N21FMR 1N21FR 1N21G 1N21GM 1N21GMR 1N21GR 1N21WD 1N21WDM 1N21WB 1N21WBM 1N21WF 1N21WFM 1N21TC 1N21WGM 1N22


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    3060MHz, 1N21A 1N21B 1N21BM lN21Bt 1N21BMR 1N21BR IN23B 1N22WB 1N23B 1N21D 1n21 1N23C PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG E L E C T R O N I C S I NC h7E T> m 7^4142 00171332 35Ô M S I I G K PRELIMINARY KM616V513 CMOS SRAM 32,768 W O R D x 16 B it High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time: 17, 20, 25ns (Max.) • Low Power Dissipation


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    KM616V513 KM616V513J-17 130mA KM616V513J-20 120mA KM616V513J-25: 110mA l/09-l/0 KM616V513J: 40-Pin PDF

    xxww

    Abstract: KM68B257AJ-8
    Text: SAMSUNG ELECTRONICS INC b?E D • 7 clb 4 m s []0 1 7 b 0 1 7 5 H m s h g k BiCMOS SRAM KM68B257A 32,768 WORD x 8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fa s t A c c e s s T im e : 8 , 9 , 1 0 , 12n s M a x. • Low P o w er D issipation


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    KM68B257A 017b01 110mA KM68B257AJ-8: 185mA KM68B257AJ-9: KM68B257AJ-10: 175mA KM68B257AJ-12: xxww KM68B257AJ-8 PDF

    HY62U16100

    Abstract: HY62U16100LLR2-I
    Text: "HYUNDAI h y 6 2 V 1 6 1 0 0 - I /h y 6 2 U 1 6 1 0 0 -(I) 1 Series 64Kx16bit CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62V16100-(l)/HY62U16100-(l) is a high­ speed, low power and 1M bits CMOS SRAM organized as 65,536 words by 16 bits. The HY62V16100-(I)/ HY62U16100-(I) uses sixteen


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    64Kx16bit 44pin 400mil HY62V16100- /HY62U16100- HY62U16100- HY62V16100 HY62V16100-I HY62U16100 HY62U16100LLR2-I PDF

    package tsop1 28

    Abstract: AX1127 0R015 PACKAGE DIMENSIONS 100-TQFP-1420A
    Text: PACKAGE DIMENSIONS Unit : mm/inch 445 ELECTRONICS PACKAGE DIMENSIONS Unit : mm/inch 2 8 -D IP -3 0 0 2 8 -D IP -4 0 0 446 ELECTRONICS PACKAGE DIMENSIONS Unit : mm/inch 2 8 -D IP -6 0 0 B 3 2 -D IP -4 0 0 447 ELECTRONICS PACKAGE DIMENSIONS Unit : mm/inch 3 2 -D IP -6 0 0


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    28-TSOP1-0813 1-0814F 32-TSO 004MAX 52-PLCC 100-TQFP-1420A package tsop1 28 AX1127 0R015 PACKAGE DIMENSIONS 100-TQFP-1420A PDF

    28DIP300

    Abstract: 24-DIP-300 28-DIP-300 J400 32-TS0P1-0814F 28-SOJ-300 28-DIP-600B
    Text: P A C K A G E DIMENSIONS Unit : mm/inch 24-DIP-300 485 ELECTRONICS PA C K A G E DIMENSIONS Unit : mm/inch 28-DIP-300 486 ELECTRONICS PA C K A G E DIMENSIONS Unit : mm/inch 28-DIP-600B 487 ELECTRONICS PA C K A G E DIMENSIONS Unit : mm/inch 32-DIP-600 488 ELECTRONICS


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    24-DIP-300 28-DIP-300 28-DIP-600B 32-DIP-600 32-S0P-525 32-TS0P1-0814F 32-TSOP1-0814R 32-TSOP1-0820F 32-TSOP1-0820R 10MAX 28DIP300 24-DIP-300 28-DIP-300 J400 32-TS0P1-0814F 28-SOJ-300 28-DIP-600B PDF

    Untitled

    Abstract: No abstract text available
    Text: SMM-120-02-^ D-P SM M —12 4 - 0 2 - S - S auria^e S M . • . . • T j . I l i i n o H I G H R High reliability Tiger Eve contacts Ava. able with cpkonal Pick-anci-Place pads SPECIFICATIONS Materials:


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    SMM-120-02-^ 1-300-SAMTEC-9 812-944-t i0i314 PDF

    cd 1619 CP fm radio

    Abstract: cd 1619 C2 fm radio cd 1619 CP GE 8111 JRC 082 SEC80 DBL 1021 LCD 1601 display NJU6466 NJU6466C
    Text: N JU 64 6 6 PRELIMINARY 24-CHARACTER 2-LI NE DOT MATRIX LCD CONTROLLER DRIVER I GENERAL DESCRIPTION The NJU6466 is a 1 Chip Dot Matrix LCD controller dri­ ver for u p to 24-character 2-line display. It contains voltage converter, microprocessor inter­ face circuits, instruction decoder controller, character


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    NJU6466 24-CHARACTER NJU6466 600bits V50UT COM24 NJU6466) cd 1619 CP fm radio cd 1619 C2 fm radio cd 1619 CP GE 8111 JRC 082 SEC80 DBL 1021 LCD 1601 display NJU6466C PDF

    KM6164002j

    Abstract: KM6164002 ISE Electronics
    Text: SAMSUNG ELECTRONICS INC b7E D • 7^4145 DD177BD ST7 PRELIMINARY KM6164002 spigk CMOS SRAM 262,144 WORD x 16 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.)


    OCR Scan
    KM6164002 D0177BD KM6164002J-20: 240mA KM6164002J-25: 220mA KM6164002J-35: 200mA KM6164002J: 44-Pln KM6164002j KM6164002 ISE Electronics PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b 7 E D • 7 ^ 4 1 4 2 G O lT b E M KM616513 2 5 1 SM6K CMOS SRAM 32,768 WORD x 16 BIT FEATURES GENERAL DESCRIPTION • F a s t A cc e s s T im e 15, 17, 20, 25ns m ax. • Low P o w er D is sip a tio n S tandb y (TTL) : 5 0m A (m ax.)


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    KM616513 0017b24 KM6165135-15: 210mA KM616513J-17: 200mA KM616513J-20: 190mA KM616513J-25: 180mA PDF

    R0310

    Abstract: 64KX4 samsung CMOS SRAM 28-pin SOJ SRAM
    Text: I SAMSUNG ELECTRONICS INC b?E D m 7Tbm42 KM 64258B 00175fc.b Ö2T SI1GK CM OS SRAM 6 4 K X 4 Bit High-Speed CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast Access Tim e: 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 40m A (m ax.)


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    KM64258B 7Tbm42 D017Sfc 64KX4 KM642S8BP/J-15: 140mA KM64258BP/J-20: 130mA KM64258BP/J-25: 120mA R0310 samsung CMOS SRAM 28-pin SOJ SRAM PDF