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Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 2N3966 N-CHANNEL SILICON FET Symmetrical n-channel, depletion type, planar epitaxial junction field-effect transistor in a TO-72 metal envelope with the shield lead connected to the case. The transistor is suitable in a variety of low power switching applications, e.g. in multiplexing systems. |
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2N3966 bb53T31 D03SfiSb 003SAS7 |