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    003S3 Search Results

    003S3 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    7M1003S35C Renesas Electronics Corporation 64K X 8 DUAL-PORT MODULE Visit Renesas Electronics Corporation
    7M4003S30CHB Renesas Electronics Corporation 32KX32 CERAMIC HIP MODULE Visit Renesas Electronics Corporation
    7M4003S35CHB Renesas Electronics Corporation 32KX32 CERAMIC HIP MODULE Visit Renesas Electronics Corporation
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    003S3 Price and Stock

    Panduit Corp PCSB600-3S-3Y

    CONN INLINE TAP 600 MCM-6 AWG
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    DigiKey PCSB600-3S-3Y Bulk 9 1
    • 1 $39.25
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    Avnet Americas PCSB600-3S-3Y Bulk 4 Weeks, 3 Days 1
    • 1 $61.87
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    Newark PCSB600-3S-3Y Bulk 11 1
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    RS PCSB600-3S-3Y Bulk 3
    • 1 -
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    Master Electronics PCSB600-3S-3Y 6
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    Sager PCSB600-3S-3Y
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    JRH Electronics 770-003S304

    HEATSHRINK BOOT BLACK
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    DigiKey 770-003S304 Bulk 1
    • 1 $3440.95
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    JRH Electronics 770-003S301

    HEATSHRINK BOOT BLACK
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    DigiKey 770-003S301 Bulk 1
    • 1 $3440.95
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    • 100 $2408.6643
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    JRH Electronics 770-003S306

    HEATSHRINK BOOT BLACK
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    DigiKey 770-003S306 Bulk 1
    • 1 $3440.95
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    • 100 $2408.6643
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    JRH Electronics 770-003S306W2

    HEATSHRINK BOOT BLACK
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    DigiKey 770-003S306W2 Bulk 1
    • 1 $3440.95
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    • 100 $2408.6643
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    003S3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Lipped Straight 770-001S3 and 770-003S3 Type 3 Flexible Polyolein Straight Lipped Adapter Shrink Boots, Standard Type 3 Flexible Polyolein For General Duty Applications  General purpose harnessing Economical lexible polyolein boots it most standard shrink boot adapters, including M85049


    Original
    PDF 770-001S3 770-003S3 M85049 AS81765/1 Tempe0-001S307W2 770-001S308W2 770-001S309W2 770-003S300W2 770-003S301W2 770-003S302W2

    smd transistor cy 813

    Abstract: TCA505A inductive proximity detector ic TCA505 B TCA505G gg3s
    Text: 47E D SIEMENS • fl235b05 003S3fl5 4 ■ S I E 6 SIEMENS AKTIEN6ESELLSCHAF ^ ¿ 6 - 0 3 1C for Inductive Proximity Switches with Short-Circuit Protection TCA 505 Bipolar IC Preliminary Data Features • • • • • • • • • • Wide supply voltage of 31 to 4.5 V


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    PDF fl235b05 003S3fl5 Q67000-A8278 fl23SbD5 G035402 T-65-05 smd transistor cy 813 TCA505A inductive proximity detector ic TCA505 B TCA505G gg3s

    TCA 205 N

    Abstract: TCA 200 y
    Text: M7E D ÔE3SbOS 003S372 b • SIEG SIEMENS AKTIENGESELLSCHAF TCA 205 Proximity Switch Bipolar 1C Features • • • • • • Large supply voltage range High output current Antivalent outputs Adjustable switching distance Adjustable hysteresis Turn-on delay


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    PDF 003S372 P-DIP-14 53SbGS GD3S373 23SbG5 QG35377 T-65-05 B65939-A-X22 B65940-A-M1 IEOC0801 TCA 205 N TCA 200 y

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE MAINTENANCE TYPE E5E D ^^53= 131 aaaa343 a • B Y 359 SERIES 7 = <93-1 7 FAST HIGH-VOLTAGE RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in TO-220 plastic envelopes, featuring fast recovery times. They are intended for use as an anti-parallel diode to GTOs and similar high-voltage switches,


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    PDF aaaa343 O-220 BY359â bbS3131 T-03-17 BY359

    ADE 7816

    Abstract: transistor b616
    Text: MITSUBISHI MICROCOMPUTERS M35052-XXXSP/FP SCREEN CHARACTER and PATTERN DISPLAY CONTROLLERS DESCRIPTION The M 35052-XXXSP/FP is TV screen display control 1C w hich can PIN CONFIGURATION TOP VIEW be used to display inform ation such as num ber of channels, the date


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    PDF M35052-XXXSP/FP 35052-XXXSP/FP 20-pin H-LF484-A KI-9703 G0353Ã ADE 7816 transistor b616

    Untitled

    Abstract: No abstract text available
    Text: F IN A L ü Am7942 Advanced Micro Devices Subscriber Line interface Circuit DISTINCTIVE CHARACTERISTICS • Programmable constant current feed ■ -1 9 V to -5 8 V battery operation ■ Receive current gain = 200 ■ ■ Programmable loop detect threshold


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    PDF Am7942 EIA/TIA-464-A. Am7942

    HPB100474E

    Abstract: JJPB100474E JUPB100474E nec A2C
    Text: N E C ELECTRONICS INC blE D NEC NEC Electronics Inc. bM27525 GG3S37b G73 « N E C E jjPB100474E 1024 X 4-Bit 100K ECL RAM Description Pin Configurations The /JPB100474E is a very-high-speed 100K in terface ECL RAM organized as 1024 words by 4 bits and designed w ith noninverted, o pen -em itter o utputs and


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    PDF uPB100474E /JPB100474E 24-Pin iPB100474E 1024-word b427S2S JHPB100474E 63IH4164B -6144B HPB100474E JJPB100474E JUPB100474E nec A2C

    Untitled

    Abstract: No abstract text available
    Text: < £ 2 ¡ L P r o d u c t S p e c if ic a t io n œ Z86E07 CMOS Z8 8-BlT OTP _ MICROCONTROLLER FEATURES • Low-Cost, 8-Bit CMOS MCU OTP Support for Z86C07 18-Pin Package (DIP, SOIC) ■ 2 Kbytes of One-Time-PROM


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    PDF Z86E07 Z86C07) 18-Pin Z86E07 Z86E0712PSC Z86E0712SSC 86E07 Z86E07,

    KM48C512DJ

    Abstract: G0353
    Text: K M 4 8 C 5 12 D J CMOS DRAM 512K x 8 Bit CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 524,288 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


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    PDF KM48C5 512Kx8 KM48C512DJ 71L41H2 KM48C512DJ G0353

    Untitled

    Abstract: No abstract text available
    Text: K M 4 8 C 2 10 4 B S CMOS D R A M ELECTRONICS 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


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    PDF 16Mx4, 512Kx8) KM48C2104BS

    Untitled

    Abstract: No abstract text available
    Text: K M 4 8 C 2 1 OOBS CMOS DRAM ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


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    PDF 512Kx8) KM48C2100BS D3S337 7Tb4142

    transistors ON 4673

    Abstract: rfd16N10 lo16a
    Text: HA R R I S S E M I C O N D S E C T O R 2 ] H A R R MOE D • M 3 0 S 2 7 1 G.D3S375 ö M H A S I S August 1991 R F D 1 6 N 1 0 . R F D 1 6 N 1 0 S M N-Channel Enhancem ent Mode Power Field Effect Transistors MegaFETs Features Packages TO-2S1AA TOP VIEW • 16A, 100V


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    PDF D3S375 RFD16N10 RFD16N10SM AN-7254 AN-7260. 003S37b RFD16N10, RFD16N10SM transistors ON 4673 lo16a

    diode sy 200

    Abstract: UCM0J
    Text: P h ilip * S e m ic o n d u c to r* Product specification Heavy duty optocouplers CNW11AV-1/2/3 FEATU RES • Minimum 2 mm Isolation thickness between emitter and receiver • A wide body encapsulation with a pin distance of 10.16 mm • An external clearance of 9.6 mm


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    PDF CNW11AV-1/2/3 E90700 bbS3S31 D03533L MCB902 bb53T31 diode sy 200 UCM0J

    CNW83

    Abstract: CNW82 phototransistor philips BS415 BS7002 UBB03
    Text: Product specification Philips S em iconductors Wide body, high isolation optocouplers CNW82/CNW83 FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm • Minimum creepage distance 10 mm • High current transfer ratio and low saturation voltage, making


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    PDF CNW82/CNW83 CNW82 CNW83 OT228 CNW83. CNW82 bbS3131 7Z2406J phototransistor philips BS415 BS7002 UBB03

    Optocoupler 601

    Abstract: UC6903 IEC-65 BS415 BS7002 CNW84 CNW85 VDE0884 optocoupler CNWB
    Text: Product specification Philips Semiconductors Heavy duty optocouplers CNW84/CNW85 FEATURES • • • • • • • Minimum 2 mm isolation thickness between emitter and receiver A wide body DIL encapsulation with a pin distance of 10.16 mm An external clearance of 9.6 mm


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    PDF CNW84/CNW85 CNW84 CNW85 OT228 00353t Optocoupler 601 UC6903 IEC-65 BS415 BS7002 VDE0884 optocoupler CNWB

    u035

    Abstract: VDE 0303 Teil 31 85630 B5415 CNW138 Optocoupler 601 BS415 BS6301 BS7002
    Text: P h ilip s Sem ico nd ucto r» Product specification Wide body, high isolation/high-gain optocouplers CNW13A/CNW139 u y w i jö /o n w ij s FEA TU R ES • Wide body DIL encapsulation, with a pin distance of 10.16 mm • Minimum clearance of 9.6 mm and minimum creepage of


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    PDF CNW138/CNW139 MCC004 u035 VDE 0303 Teil 31 85630 B5415 CNW138 Optocoupler 601 BS415 BS6301 BS7002

    DH3724CN

    Abstract: MPSH30 transistor se5020 MPS6544 2N5189 2N3444 2N3563 2N3646 DH3724CD DH3724
    Text: 3> —3 r* to m zs M r> o SATURATED SWITCHES Continued Type No. Case Stylo 2N5769 TO-92 (92) 2N5772 TO-92 (92) VCES* v CBO (V) Min VcEO (V) Min v EBO (V) Min 40 15 4.5 40 15 15 5 'CES* 'CBO « (nA> Max 400 500 MPS706 TO-92 (92) 15 MPS834 TO-92 (92) 40 MPS2369


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    PDF 2N706 2N743 2N744 2N753 2N834 2N2369 TIS86 TIS87 MPS6540 MPS6544 DH3724CN MPSH30 transistor se5020 2N5189 2N3444 2N3563 2N3646 DH3724CD DH3724

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI MICROCOMPUTERS M35045-XXXSP/FP S C R E E N C H A R A C T E R a n d P A T T E R N D IS P L A Y C O N T R O L L E R S D E S C R IP T IO N The M 35045-XXXSP/FP is a TV screen display control 1C. It uses a PIN CONFIGURATION TOP VIEW silicon gate C M OS process and is housed in a 20-pin s h rin k DIP


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    PDF M35045-XXXSP/FP 35045-XXXSP/FP 20-pin 35045-001SP/FP M35045-XXXFP) H-DF463-A

    Untitled

    Abstract: No abstract text available
    Text: FIN AL a Am7943 Advanced Micro Devices Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS • Programmable constant current feed ■ Two-wire impedance set by single external impedance ■ Current gain = 200 ■ ■ Programmable loop detect threshold


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    PDF Am7943 -19-V -58-V Am7943 Q0353b5 02S7S57

    Untitled

    Abstract: No abstract text available
    Text: KM48C5 1 2DJ CMOS D R AM ELECTRONICS 5 1 2 K x 8 B i t CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 524,288 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


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    PDF KM48C5 512Kx8 16Mx4, 512Kx8) KM48C512DJ) KM48C512DJ 7Tb4142

    1N6528

    Abstract: M25UFG RA641 58A2 1N6535 RA644 11n65 RM109 M50FG RM117
    Text: T " 0 3 - 0 9 T ' O S - f t I INCH-PQUND I MI L -S-19500/577 5 Ap r i l 1989 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, HIGH VOLTAGE TYPES 1N6528 THROUGH 1N6535 JANTX, JANTXV, AND JANS This specification is approved for use by all Depart­


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    PDF MIL-S-19500/577 1N6528 1N6535 MIL-S-19500. RA642 RA645 RM121 RM131 M60FG M60UFG M25UFG RA641 58A2 RA644 11n65 RM109 M50FG RM117

    Untitled

    Abstract: No abstract text available
    Text: P hilips Sem iconductors Product specification W ide body, high isolation, high-speed optocouplers FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm • Minimum clearance of 9.6 mm and minimum creepage of 10 mm • 11 MHz bandwidth


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    PDF 135/CNW 136/CNW CNW4502 CNW136, E90700 BS415 BS7002 BS6301

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors P rod uct sp e c ific a tio n W ide body, high isolation/high-gain optocouplers CNW 138/CNW 139 FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm • Minimum clearance of 9.6 mm and minimum creepage of 10 mm •


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    PDF 138/CNW E90700 BS415 BS7002 BS6301

    Untitled

    Abstract: No abstract text available
    Text: P rod uct sp e c ific a tio n P h ilip s S e m icon ducto rs CNR50 Dedicated IC-optocoupler FEATURES • A cost effective optocoupler with integrated additional functions • A wide body DIL 8 encapsulation with a pin distance of 10.16 mm • A clearance of 9.6 mm minimum


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    PDF CNR50 E90700 BS415 BS7002 BS5301 bb53T31 003533b