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    9 BJE 53

    Abstract: BJE 80 diode BUK444 BUK444-200A BUK444-200B
    Text: N AJ1ER P H I L I P S / D I S C R E T E b^E D • bb53°131 003QS2S 7TM M A P X P h ilip s S e m ico n d u cto rs P ro d u ct S p e cifica tio n PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.


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    PDF 003QS2S BUK444-200A/B OT186 BUK444 -200A -200B 9 BJE 53 BJE 80 diode BUK444-200A BUK444-200B