PIP401
Abstract: 03Aj
Text: VCC VI PIP401 VRS OR-ing Intelligent Switch VO TFL GND Rev. 03 — 5 November 2002 Product data 003aaa198 1. Description The PIP401 is an OR-ing Intelligent Switch ORIS , a dedicated power OR-ing device, that combines the simplicity of a diode with the efficiency of a MOSFET
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PIP401
003aaa198
PIP401
03Aj
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BT138-800G
Abstract: No abstract text available
Text: BT138-800G 4Q Triac 27 July 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated four quadrant triac in a SOT78 TO-220AB plastic package intended for use in applications requiring high bidirectional transient and blocking voltage
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BT138-800G
O-220AB)
BT138-800G
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Untitled
Abstract: No abstract text available
Text: BT152X-400R SCR 26 July 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated Silicon Controlled Rectifier SCR in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring very high inrush current
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BT152X-400R
OT186A
O-220F)
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PSMN4
Abstract: No abstract text available
Text: TO -2 20F PSMN4R6-100XS N-channel 100V 4.6 mΩ standard level MOSFET in TO220F SOT186A Rev. 1 — 3 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial,
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PSMN4R6-100XS
O220F
OT186A)
PSMN4
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capacitive discharge ignition
Abstract: No abstract text available
Text: BT151X-800C SCR 23 July 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated Silicon Controlled Rectifier SCR in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring high bidirectional blocking
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BT151X-800C
OT186A
O-220F)
capacitive discharge ignition
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Untitled
Abstract: No abstract text available
Text: BUK762R0-40C N-channel TrenchMOS standard level FET Rev. 02 — 20 August 2007 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using Philips Ultra High-Performance Automotive (UHP) TrenchMOS technology.
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BUK762R0-40C
BUK762R0-40C
771-BUK762R0-40C
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BSS138PW
Abstract: TRANSISTOR SMD CODE PACKAGE SOT323
Text: BSS138PW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using
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BSS138PW
OT323
SC-70)
AEC-Q101
771-BSS138PW115
BSS138PW
TRANSISTOR SMD CODE PACKAGE SOT323
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"Power Diode"
Abstract: No abstract text available
Text: TO -22 0A B BYV410-600 Dual enhanced ultrafast power diode Rev. 2 — 5 August 2011 Product data sheet 1. Product profile 1.1 General description Dual enhanced ultrafast power diode in a SOT78 TO-220AB plastic package. 1.2 Features and benefits High thermal cycling performance
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BYV410-600
O-220AB)
771-BYV410-600127
BYV410-600
"Power Diode"
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TRANSISTOR SMD MARKING zg
Abstract: 2N7002BKV transistor smd zG TRANSISTOR SMD MARKING CODE zg
Text: 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev. 2 — 22 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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2N7002BKV
OT666
AEC-Q101
771-2N7002BKV115
2N7002BKV
TRANSISTOR SMD MARKING zg
transistor smd zG
TRANSISTOR SMD MARKING CODE zg
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BT138-600
Abstract: No abstract text available
Text: BT138-600 4Q Triac 2 August 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated four quadrant triac in a SOT78 TO-220AB plastic package intended for use in applications requiring high bidirectional transient and blocking voltage
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BT138-600
O-220AB)
BT138-600
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2N7002BKW
Abstract: 2n7002bk TRANSISTOR SMD MARKING CODE 50 006-AA
Text: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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2N7002BKW
OT323
SC-70)
AEC-Q101
771-2N7002BKW115
2N7002BKW
2n7002bk
TRANSISTOR SMD MARKING CODE 50
006-AA
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bt137-600
Abstract: IT-201 bt137 nxp bt137 600
Text: TO -22 0A B BT137-600 4Q Triac Rev. 5 — 25 March 2011 Product data sheet 1. Product profile 1.1 General description Planar passivated four quadrant triac in a SOT78 plastic package intended for use in general purpose bidirectional switching and phase control applications.
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BT137-600
771-BT137-600
BT137-600
IT-201
bt137 nxp
bt137 600
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Untitled
Abstract: No abstract text available
Text: TO -2 20A C BYW29E-200 Ultrafast power diode Rev. 5 — 20 March 2012 Product data sheet 1. Product profile 1.1 General description Ultrafast power diode in a SOD59 2-lead TO-220AC plastic package. 1.2 Features and benefits Fast switching Low thermal resistance
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BYW29E-200
O-220AC)
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Untitled
Abstract: No abstract text available
Text: BYC10-600 Hyperfast power diode 20 September 2012 Product data sheet 1. Product profile 1.1 General description Hyperfast power diode in a SOD59 2-lead TO-220AC plastic package 1.2 Features and benefits • Extremely fast switching • Low reverse recovery current
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BYC10-600
O-220AC)
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2N7002KA
Abstract: No abstract text available
Text: 2N7002KA N-channel TrenchMOS FET Rev. 03 — 25 February 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level compatible
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2N7002KA
2N7002KA
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BTA312X
Abstract: BTA312X-600D BTA312X-600E BTA312X-800E C150F
Text: BTA312X series D and E 12 A Three-quadrant triacs high commutation Rev. 01 — 16 April 2007 Product data sheet 1. Product profile 1.1 General description Passivated, new generation, high commutation triacs in a SOT186A full pack plastic package 1.2 Features
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BTA312X
OT186A
BTA312X-600D/E)
BTA312X-800E)
BTA312X-600D
BTA312X-600E
BTA312X-800E
C150F
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BUK9Y14-40B
Abstract: No abstract text available
Text: BUK9Y14-40B N-channel TrenchMOS logic level FET Rev. 03 — 2 June 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology. This
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BUK9Y14-40B
BUK9Y14-40B
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2N7002F
Abstract: 2N7002F_2
Text: 2N7002F N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible
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2N7002F
mbb076
2N7002F
2N7002F_2
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JESD625-A
Abstract: PMZ760SN SC-101
Text: PMZ760SN N-channel TrenchMOS standard level FET Rev. 02 — 12 July 2007 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features
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PMZ760SN
PMZ760SN
JESD625-A
SC-101
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BUK75
Abstract: BUK754R3-75C BUK7E4R3-75C
Text: BUK754R3-75C; BUK7E4R3-75C N-channel TrenchMOS standard level FET Rev. 01 — 10 August 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package, using Philips Ultra High-Performance (UHP) automotive TrenchMOS technology.
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BUK754R3-75C;
BUK7E4R3-75C
7E4R3-75C
BUK75
BUK754R3-75C
BUK7E4R3-75C
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55A4
Abstract: BUK98150-55A SC-73
Text: BUK98150-55A N-channel TrenchMOS logic level FET Rev. 04 — 11 June 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology.
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BUK98150-55A
BUK98150-55A
55A4
SC-73
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silicon-controlled rectifier
Abstract: BT258S-800LT
Text: BT258S-800LT SCR logic level, high temperature Rev. 01 — 2 September 2008 Product data sheet 1. Product profile 1.1 General description Passivated sensitive gate Silicon-Controlled Rectifier in a SOT428 surface-mounted plastic package 1.2 Features • Very sensitive gate
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BT258S-800LT
OT428
BT258S-800LT
silicon-controlled rectifier
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PHU97NQ03LT
Abstract: No abstract text available
Text: PHU97NQ03LT N-channel TrenchMOS logic level FET Rev. 01 — 25 February 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology.
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PHU97NQ03LT
PHU97NQ03LT
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EC103D1
Abstract: SC-43A
Text: EC103D1 Thyristor, sensitive gate Rev. 02 — 31 July 2008 Product data sheet 1. Product profile 1.1 General description Passivated ultra sensitive gate thyristor in a SOT54 plastic package. 1.2 Features • Ultra sensitive gate ■ Direct interfacing to low power gate
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EC103D1
EC103D1
SC-43A
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