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    0035B Search Results

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    Vishay Sprague 293D105X0035B2WE3

    293D105X0035B2WE3
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    Vishay Sprague 595D225X0035B4T

    CAP TANT 2.2UF 20% 35V 1611
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    Vishay Sprague 293D225X0035B2TE3

    CAP TANT 2.2UF 20% 35V 1411
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    Vishay Sprague 293D474X0035B2TE3

    CAP TANT 0.47UF 20% 35V 1411
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    Vishay Sprague 293D475X0035B2TE3

    293D475X0035B2TE3
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    293D475X0035B2TE3 Cut Tape 1,680 1
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    0035B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS DSS 2x81-0035/45B Power Schottky Rectifier •f a v V rrm vP 2x80 A 35-45 V 0.64 V P r e lim in a r y D a ta V RRM V 35 45 35 45 RSM Symbol Type b I_ -H - -t-o -W - DSS 2X81-0035B DSS 2X81-0045B Test Conditions Maximum Ratings ^FA V M Tc = 75°C; rectangular, d = 0.5


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    2x81-0035/45B 2X81-0035B 2X81-0045B OT-227 flb52fc> GDD470T PDF

    d442

    Abstract: No abstract text available
    Text: DSSK 80-0035/45B Power Schottky Rectifier •FAV with common cathode V rrr/I VF Preliminary Data v" a s m V v m* V 35 45 35 45 TyPe ' r-H - 4A - DSSK 80-0035B DSSK 80-0045B r * -i1 2x40 A 35 - 45 V 0.45 V TO-247 AD l-r C A C TAB A = Anode, C = Cathode , TAB = Cathode


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    80-0035/45B 80-0035B 80-0045B O-247 D4-42 035/45B D4-43 d442 PDF

    2x81-0045

    Abstract: E72873
    Text: Power Schottky Rectifier ^FAV V rRM Vf 2x80 A 3 5 -45 V 0.64 V Preliminary Data RSM V V 35 45 35 45 Symbol -i-o Type RRM -WDSS 2X81-0035B DSS 2X81-0045B Test Conditions Maximum Ratings ^FAVM Tc = 75°C; rectangular, d = 0.5 Tc = 75°C; rectangular, d = 0.5; per device


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    2X81-0035B 2X81-0045B OT-227 728ge 2x81-0045 E72873 PDF

    Untitled

    Abstract: No abstract text available
    Text: NATL SEMICOND {DISCRETE} 65 0 1130 N A T L S E M I C O N D , 2T 0 . Sfi D E | t.S Dl 130 0035b0h DISCRETE 28C 35605 D r- National Semiconductor * o fiC NR041(NPN) low-level signal switching transistor features | "\ | p a c k a g e an d lead c o d in g • 40mV guaranteed V c e (sat) characteristics at


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    0035b0h NR041 PDF

    UV diode 254 nm

    Abstract: ixys 047 MD1000
    Text: □IXYS Advanced Technical Data Power Schottky Rectifier V RSM V RRM V 2X10A VRRM = 35 - 45 V •n Type I ►I T M TO-220 AB V 35 45 35 45 Symbol U DSSK 20 Uv = DSSK 20-0035B S DSSK 20-0045B(S) Test Conditions Maximum Ratings (per diode) rms Uav Uav Tc = 135°C; rectangular, d = 0.5


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    2X10A O-220 20-0035B 20-0045B D-68623 UV diode 254 nm ixys 047 MD1000 PDF

    2x81-0045B

    Abstract: 2x81-0045
    Text: DSS 2x81-0035/45B IFAV = 2x80 A VRRM = 35 - 45 V VF = 0.64 V Power Schottky Rectifier Preliminary Data VRSM VRRM V V 35 45 35 45 miniBLOC, SOT-227 B Type DSS 2x81-0035B DSS 2x81-0045B Symbol Test Conditions Maximum Ratings IFRMS IFAVM IFAVM TC = 75°C; rectangular, d = 0.5


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    2x81-0035/45B OT-227 2x81-0035B 2x81-0045B DSS2x81-0045B 2x81-0045B 2x81-0045 PDF

    810035

    Abstract: No abstract text available
    Text: n ix Y S OSS 2x 81-0035/45B Power Schottky Rectifier lFAV = 2x80 A VRRM = 35 - 45 V VF = 0.64 V Preliminary Data RSM Type RRM V V 35 45 35 45 Symbol -W - ^FAVM ^FSM DSS 2X81-0035B DSS 2X81-0045B Test Conditions Maximum Ratings Tc = 75°C; rectangular, d = 0.5


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    81-0035/45B OT-227 2X81-0035B 2X81-0045B 2X81-0035/45B 810035 PDF

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Advanced Technical Data Power Schottky Rectifier DSS 60 ' pav V RRM = 60 A = 35 - 45 V TO-247 AD V RSM TyPe V rrm V f A c V 35 45 35 45 DSS 60-0035B DSS 60-0045B Symbol Test Conditions ^FAV Tc = 120°C; rectangular, d = 0.5 ^FSM tp = 1 0 m s C TAB


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    O-247 60-0035B 60-0045B PDF

    Untitled

    Abstract: No abstract text available
    Text: □IXYS DSSK 80-0035/45B Power Schottky Rectifier lFAV = 2x40 A VRRM = 35 - 45 V VF = 0.45 V with common cathode Prelim inary Data ^R SM ^R R M v T y P e I 35 45 • > I T "i " v_ 35 45 |- ► ! DSSK 80-0035B DSSK 80-0045B AC A A = Anode, C = Cathode , TAB = Cathode


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    80-0035/45B 80-0035B 80-0045B PDF

    Untitled

    Abstract: No abstract text available
    Text: DSSK 80-0035/45B IFAV = 2x40 A VRRM = 35 - 45 V VF = 0.45 V Power Schottky Rectifier with common cathode Preliminary Data VRSM VRRM V V 35 45 35 45 TO-247 AD Type A DSSK 80-0035B DSSK 80-0045B C A A C A C TAB A = Anode, C = Cathode , TAB = Cathode Symbol


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    80-0035/45B 80-0035B 80-0045B O-247 circuits40 PDF

    gal16l8

    Abstract: schematic lcd inverter ibm VIDC20 79212 ARM7500 hitachi lcd backlight schematic acorn computer acorn vidc 300D schematic 32" lcd inverter
    Text: Application Note 35 Attaching an LCD to ARM7500 Document number: ARM DAI 0035B Issued: April 1997 Copyright Advanced RISC Machines Ltd ARM 1996 ENGLAND GERMANY Advanced RISC Machines Limited Fulbourn Road Cherry Hinton Cambridge CB1 4JN UK Telephone: +44 1223 400400


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    ARM7500 0035B ARM7500 gal16l8 schematic lcd inverter ibm VIDC20 79212 hitachi lcd backlight schematic acorn computer acorn vidc 300D schematic 32" lcd inverter PDF

    2x81-0045

    Abstract: 2X81 2x81-0045B Vrrm diode rectifier 35 vrrm
    Text: DSS 2x81-0035/45B IFAV = 2x80 A VRRM = 35 - 45 V VF = 0.64 V Power Schottky Rectifier Preliminary Data VRSM VRRM V V 35 45 35 45 miniBLOC, SOT-227 B Type DSS 2x81-0035B DSS 2x81-0045B Symbol Test Conditions Maximum Ratings IFRMS IFAVM IFAVM TC = 75°C; rectangular, d = 0.5


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    2x81-0035/45B OT-227 2x81-0035B 2x81-0045B 2x81-0045 2X81 2x81-0045B Vrrm diode rectifier 35 vrrm PDF

    A3545

    Abstract: k 0247
    Text: DSSK 80-0035/45B Power Schottky Rectifier ^FAV with common cathode V rrm VF 2x40 A 35 •45 V 0.45 V Preliminary Data T 0-247 AD v RSM v , V V 35 45 35 45 Type '±-V-£ A DSSK 80-0035B DSSK 80-0045B C A C TAB A = Anode, C = Cathode , TAB = Cathode Symbol


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    80-0035/45B 80-0035B 80-0045B A3545 k 0247 PDF

    ixys 047

    Abstract: No abstract text available
    Text: □IXYS Advanced Technical Data Power Schottky Rectifier DSSK 30 iFAV = 2x15 A V RRM = 35 - 45 V TO-247 AD W- T M V RSM V RRM V V 35 45 35 45 Type C TAB DSSK 30-0035B DSSK 30-0045B A = Anode, C = Cathode , TAB = Cathode Symbol Test Conditions Maximum Ratings (per diode)


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    30-0035B 30-0045B O-247 D-68623 ixys 047 PDF

    NA51W

    Abstract: NA52W NB313Y NA52W pnp 35604 NB311 NB312 NB313 NB321 NB322
    Text: NB311,312,313 NPN , NB321,3 2 2 ,323(PNP) NATL SEUICOND {DISCRETE} 6501130 NATL ifl EMICOND, (DISCRETE) 28C National Semiconductor r - 35601 n - 2 , } 3 ^ 0 - 7 NB311, 312, 313 (NPN) * , NB321, 3 2 2,3 N P ) 1,5ArnP com plem entary pow er drivers 2 ,3 23(P


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    bSD113D NB311, NB321, andTO-202 b5D113D NB313Y" NB022EY NR001E NB113EY NA51W NA52W NB313Y NA52W pnp 35604 NB311 NB312 NB313 NB321 NB322 PDF

    D43256A

    Abstract: TINA NEC electronics upd43256a
    Text: E C ELECTRONICS INC NEC ELECTRON DEVICE / b2E D • b4S75E5 OOBSbMT fiTfi M N E C E s h e e MOS t INTEGRATED CIRCUIT ¿¿PD43256A 256K-BIT CMOS STATIC RAM EXTEN DED TEMPERATURE VERSIO N DESCRIPTION The ¿¿PD43256A is a high speed, low power, 32K words by 8 bits CMOS static RAM fabricated with advanced


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    b4S75E5 uPD43256A 256K-BIT PD43256A D43256A b427525 SYM30L TINA NEC electronics PDF

    ADS1240

    Abstract: MSP430 MSP430F413 MSP430 thermocouple 0HR13 Thermistor S14
    Text: Application Report SLAA125A – October 2001 Implementing a Direct Thermocouple Interface With the MSP430x4xx and ADS1240 Mike MItchell MSP430 ABSTRACT This application report describes and shows how to implement a direct thermocouple interface, without using the signal conditioning circuitry normally required for


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    SLAA125A MSP430x4xx ADS1240 MSP430 ADS1240, 24-bit MSP430F41x MSP430F413 ADS1240 MSP430 MSP430 thermocouple 0HR13 Thermistor S14 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4N38 4N38A J V ^ /^ E \ O PTO CO U PLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and an npn silicon photo­ transistor. They are suitable fo r use w ith TTL integrated circuits. Features • High maximum output voltage • Fast switching and low saturation voltage


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    4N38A E90700 0110b bbS3T31 0Q35b41 0035b42 PDF

    980202 remote

    Abstract: SI01DP automatic transfer switch mitsubishi
    Text: MITSUBISHI MICROCOMPUTERS 38B5 Group íí'00' , ^ 0' > l > a S0!"aV SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER DESCRIPTION The 38B5 group is the 8 -bit microcomputer based on the 740 family • P W M . 14-bit X 1


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    14-bit 16-bit 12-channel 10-bit \Kl-9602 980202 remote SI01DP automatic transfer switch mitsubishi PDF

    Untitled

    Abstract: No abstract text available
    Text: il Am7905A Advanced Micro Devices Subscriber Line Audio-Processing Circuit SLAC Device DISTINCTIVE CHARACTERISTICS • 4.096-MHz, 64-channel expanded mode operation Uses digital signal processing ■ Built-in test modes ■ Six user-program m able digital filters


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    Am7905A 096-MHz, 64-channel 24-pin 07004B-027 35b7M PDF

    Untitled

    Abstract: No abstract text available
    Text: Am79C02/03/031 A Advanced Micro Devices Dual Subscriber Line Audio Processing Circuit (DSLAC ) Devices D ISTIN CTIVE C H A R A C T E R IS T IC S • Softw are programmable: ■ Dual PCM ports -U p to 8.192 M Hz each (128 channels per port) - S L I C impedance


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    Am79C02/03/031 096-MHz guaranteed94) 79C031. 40-pin Am79C02/03/03l PDF

    pcr 4063

    Abstract: No abstract text available
    Text: FINAL Am7901 B/C Subscriber Line Audio-Processing Circuit SLAC Device Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Combination CODEC and Filter ■ No trimming or adjustments required 4.096-MHz, 64-channel expanded mode operation ■ Uses digital signal processing


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    Am7901 096-MHz, 64-channel Am7901B 02575E7 05575H7 ES75E7 pcr 4063 PDF

    dvd board

    Abstract: ARM926EJ-S
    Text: Versatile Family DVD ARM Versatile Family DVD Installation Guide Copyright 2005-2009 ARM Limited. All rights reserved. Release Information Date Issue Confidentiality January 2005 A Non-Confidential Change First Release April 2009 B Non-Confidential Media changed from CD to DVD.


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    0035B dvd board ARM926EJ-S PDF

    L1102

    Abstract: "sot-90B" sot90b LF 428 4N38 4N38A IEC134 OPTOCOUPLER dc SOT-90B
    Text: 4N38 4N38A » OPTOCOUPLERS 1— \ O ptically coupled isolators consisting o f an infrared em itting G aAs diode and an npn silicon photo­ transistor. They are suitable fo r use w ith T T L integrated circuits. Features • High maximum o u tp u t voltage


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    4N38A E90700 0110b 0035b4E L1102 "sot-90B" sot90b LF 428 4N38 4N38A IEC134 OPTOCOUPLER dc SOT-90B PDF