2N3823 philips
Abstract: 2N3823 3R2S X451
Text: PHI LIP S MIE D INTERNATIONAL m 711005b 002b343 3 OIPHIN '' 2N3823 L T-3/-2& N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel, depletion type, silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope, intended fo r v.h.f. am plifier and m ixer applications in industrial service.
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002b343
2N3823
2N3823 philips
2N3823
3R2S
X451
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U 237 BG
Abstract: SPRG5111 SPRY5111
Text: A C INTERFACE INC IDE D | 002B3fl3 DOdOE? □ | _ S 3& M I 1 - STANLEY SUPER BRIGHT ^ • LED LAMP _ _ T - m - z t r b i- c o l o r t y p e 05 T-1 3/4 TYPE SERIES •SELECTION GUIDE COLOR . MATERIAL PART NUMBER Red Green GaP SPR G 5111
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00G0E77
SPRG5111
SPRY5111
SPRG5111
SPRY5111
U 237 BG
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Untitled
Abstract: No abstract text available
Text: ^ 5 3 ^ 3 1 002b314 bTE N AMER PHILIPS/DISCRETE APX b3E BAV45 D _ S PICOAMPERE DIODE Silicon diode in a metal envelope. It has an extremely low leakage current over a wide temperature range combined with a low capacitance and is not sensitive to light. It is intended for clamping,
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002b314
BAV45
bbS3331
002b317
002b31fl
bbS3T31
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2n3966
Abstract: transistor 2sk CRS15
Text: rr PHILIPS INTERNATIONAL MIE D B 711GÛ2b 0GEb3MS A ? B1 P H I N 2N3966 T -3 S -2 5 ' N-CHANNEL SILICON FET Symmetrical n-channel, depletion type, planar epitaxial junction field-effect transistor in a T O -7 2 metal envelope w ith the shield lead connected to the case. The transistor is suitable in a variety o f
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2N3966
-T-3S-25'
aTO-72
002b34fl
T-35-25
2n3966
transistor 2sk
CRS15
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Untitled
Abstract: No abstract text available
Text: w . GEC PLESSEY S E M I C O N D U C T O R S MA838 FAMILY SINGLE PHASE PULSE WIDTH MODULATION WAVEFORM GENERATOR The MA838 PWM generator has been designed to provide waveforms for the control of variable speed AC machines, uninterruptible power supplies and other forms of power
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MA838
MA828
full360Â
37bfi522
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Untitled
Abstract: No abstract text available
Text: ADV MICRO {MEMORY} Tb dË | 0557550 Am90CL256 005L.3ÖM is : Low-Pöwer 256Kx1 CMOS Enhanced Page Mode DRAM : OVERVIEW The 256K x 1 CMOS Low-Power fL ' DRAM versions share common functional descriptions, DC and AC characteristics with the corresponding standard CMOS non-'L1) versions. The only additions to these sections are:
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Am90CL256
256Kx1
100-pF
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Untitled
Abstract: No abstract text available
Text: Datasheet R8C/38T-A Group RENESAS MCU 1. R01DS0081EJ0100 Rev.1.00 Dec 09, 2011 Overview 1.1 Features The R8C/38T-A Group of single-chip microcontrollers MCUs incorporates the R8C CPU core, which provides sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, the CPU core is capable of
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R8C/38T-A
R01DS0081EJ0100
R8C/38TA
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philips I2S bus specification
Abstract: IEC-61937 I2S bus specification SP 08201 MPEG 1 Audio Compression sd 08201
Text: INTEGRATED CIRCUITS DATA SHEET SAA2505H DUET digital multichannel audio IC Preliminary specification Supersedes data of 1998 Mar 10 File under Integrated Circuits, IC01 2001 Apr 05 Philips Semiconductors Preliminary specification DUET digital multichannel audio IC
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SAA2505H
20-bit
SAA2505H
753503/02/pp32
philips I2S bus specification
IEC-61937
I2S bus specification
SP 08201
MPEG 1 Audio Compression
sd 08201
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60024 apex
Abstract: 5962-9162101HXX qml-38535 QML-38534 5962-XXXXXZZ MIL-H-38534 MIC-M-38510
Text: DESC PORM 193 SEP 87 D IS T R IB U T IO N S T A T E M E N T A. . u 5 A p p r o v e d l o r p u b l i c r e l e a s e ; d i s t r i b u t i o n i& u n lim it e d •I clDD47Gfl 0D5b32fl bfl3 ■ OfHCt t W — 596Z-E273 G O V I R N M I K T PR IN T IN G 7 4 * . 1 3 9 /4 0 » ! |
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596Z-E273
RD047DA
005b3Efl
QML-38534.
5962-9162101HXX
pa83m/883
TQ0M70Ã
60024 apex
qml-38535
QML-38534
5962-XXXXXZZ
MIL-H-38534
MIC-M-38510
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b'lE » • J bbS3^31 0D2b3a2 143 M A P X _ BB119_ SILICON VARIABLE CAPACITANCE DIODE Planar-diffused diode in a DO-35 envelope intended for autom atic frequency control in radio and television r e c e iv e r s .
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BB119_
DO-35
bb53R31
002b3B4
BB119
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Untitled
Abstract: No abstract text available
Text: M ICROWAVE A Division of Crystek Corporation CPLL66-3475-3475 0.60" SQ SMD Features 3.475 GHz Standard 3 Wire Interface Small layout 0.6" x 0.6" Applications Digital Radio Equipment Fixed Wireless Access Satellite Communications Systems Base Stations Personal Communications Systems
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CPLL66-3475-3475
CPLL66
10MHz
002B39
9F8083
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI MICROCOMPUTERS M 37703M 2AXXXSP.M 37703M 2BXXXSP M37703S1ASP,M37703S1BSP M 3 7 7 0 3 M 2 -X X X S P and SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER DESCRIPTION PIN CONFIGURATION TOP VIEW T h e M 3 7 7 0 3 M 2 A X X X S P is a sin g le -ch ip m icrocom puter d e
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37703M
M37703S1ASP
M37703S1BSP
16-BIT
P80/C
P77/A
P62/R
20/25ns
25mVrms,
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DIODE BY 339
Abstract: BB119
Text: N AUER PHILIPS/DISCRETE b^E D • bbS3^31 Q02b302 m3 IAPX BB119 A SILICON VARIABLE CAPACITANCE DIODE P l a n a r - d i f f u s e d d io d e i n a D O - 3 5 e n v e l o p e i n t e n d e d f o r a u t o m a t i c f r e q u e n c y c o n t r o l in ra d io and tele v isio n r e c e iv e r s .
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Q02b302
BB119
DO-35
DO-35
hbS3R31
002b3fiM
7Z72993
DIODE BY 339
BB119
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7z66b
Abstract: BAX18 diode td3 general purpose diode
Text: b'iE D N AMER PHILIPS/DISCRETE • tbSa'lBl □□2b372 2 m IAPX BAX18 GENERAL PURPOSE DIODE General purpose diode in a DO-35 in envelope prim arily intended fo r rectifier applications Q UICK REFERENCE D A T A V RRM max. 75 V Average forward current Repetitive peak reverse voltage
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2b372
BAX18
DO-35
OD-27
DO-35)
7z66b63
bb53131
0D2b37?
7z66b
BAX18
diode td3
general purpose diode
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Untitled
Abstract: No abstract text available
Text: M ICROWAVE A Division of Crystek Corporation CPLL58-3475-3475 0.582" x 0.800" SMD Features 3.475 GHz Standard 3 Wire Interface Small layout 0.582" × 0.8" Applications Digital Radio Equipment Fixed Wireless Access Satellite Communications Systems Base Stations
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CPLL58-3475-3475
CPLL58
002B39
9F8083
CPLL58-3475-3475
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RC266
Abstract: RS -12V SDS RELAY RSL -12V SDS RELAY MD127 RS -24V SDS RELAY txal HB 541 RELAY PCB DPDT 4c sds relays TXAL 386 B
Text: RC288ACÌ and RC288ACL * Rockwell RC288ACi and RC288ACL Integrated V.34 Data/V.17 Fax/Voice Modem Device Set Family INTRODUCTION FEATURES The Rockwell RC288ACi and R C288A CL integrated modem device set families support ultra high speed data and high speed fax operation in the US or world-wide over
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RC288ACÃ
RC288ACL
RC288ACL
42/MNP
Adaptive08TYP
GP00-D264-11/29/93
-128-Pin
RC266
RS -12V SDS RELAY
RSL -12V SDS RELAY
MD127
RS -24V SDS RELAY
txal
HB 541
RELAY PCB DPDT 4c
sds relays
TXAL 386 B
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R5F21368snfp
Abstract: 06B2D 0025DH 00285H
Text: Datasheet R8C/36T-A Group RENESAS MCU 1. R01DS0055EJ0100 Rev.1.00 Dec 09, 2011 Overview 1.1 Features The R8C/36T-A Group of single-chip microcontrollers MCUs incorporates the R8C CPU core, which provides sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, the CPU core is capable of
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R8C/36T-A
R01DS0055EJ0100
R8C/36TA
R5F21368snfp
06B2D
0025DH
00285H
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AM7998
Abstract: IEEE802-3 AM7996 Am79c900
Text: Î ADV MICRO 13E TELECOM I 0257527 Am7996 IE E E -80 2.3/E th e rn et/C h ea p e m e t Transceiver 0024, 373 7 T -7 5 '-V 9 PRELIM IN ARY DISTINCTIVE CHARACTERISTICS Compatible with Ethernet Version 2 and IEEE-802.3 10Base5 (Type A) and 10Base2 (Type B) specifications
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Am7996
IEEE-802
T-75-V9
10Base5
10Base2
AM7998
IEEE802-3
Am79c900
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06B2D
Abstract: 0029E 000E8H 002C1H 0028b 0027AH 0025DH 00285H 06B13
Text: Preliminary Datasheet Specifications in this document are tentative and subject to change. R8C/38T-A Group RENESAS MCU 1. R01DS0081EJ0001 Rev.0.01 Feb 23, 2011 Overview 1.1 Features The R8C/38T-A Group single-chip microcontrollers MCUs incorporate the R8C CPU core, which provides
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R8C/38T-A
R01DS0081EJ0001
R8C/38TA
06B2D
0029E
000E8H
002C1H
0028b
0027AH
0025DH
00285H
06B13
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06B2D
Abstract: p9530 0023AH 0025DH 00285H
Text: Datasheet R8C/38T-A Group RENESAS MCU 1. R01DS0081EJ0100 Rev.1.00 Dec 09, 2011 Overview 1.1 Features The R8C/38T-A Group of single-chip microcontrollers MCUs incorporates the R8C CPU core, which provides sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, the CPU core is capable of
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R8C/38T-A
R01DS0081EJ0100
R8C/38TA
06B2D
p9530
0023AH
0025DH
00285H
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R5F21368snfp
Abstract: R5F21368 r5f2136csnfp 0025DH 00285H
Text: Preliminary Datasheet Specifications in this document are tentative and subject to change. R8C/36T-A Group RENESAS MCU 1. R01DS0055EJ0001 Rev.0.01 Jan 28, 2011 Overview 1.1 Features The R8C/36T-A Group single-chip microcontrollers MCUs incorporate the R8C CPU core, which provides
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R8C/36T-A
R01DS0055EJ0001
R8C/36TA
R5F21368snfp
R5F21368
r5f2136csnfp
0025DH
00285H
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KS57C2616
Abstract: LC5012 64 pin IC microcontroller LCD ic 555 timer 10 minute buzzer obo 112 KS57C2516
Text: KS57C261& 4-BIT CMOS Microcontroller ELECTRONICS „ J ^ , Product Specification OVERVIEW The KS57C2616 single-chip CMOS microcontroller is designed for high performance using Samsung's newest 4-bit CPU core. With its up-to-896-dot LCD direct drive capability, flexible 8-bit and 16-bit timer/counters, and
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KS57C261&
KS57C2616
up-to-896-dot
16-bit
100-pin
4D02bH43
71b4142
LC5012
64 pin IC microcontroller LCD
ic 555 timer 10 minute
buzzer obo 112
KS57C2516
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Untitled
Abstract: No abstract text available
Text: S i GEC P L E S S EY PRELIMINARY INFORMATION S E M I C O N D U C T O R S D S 4 3 0 8 -1 .2 ITE40F06/ITE40C06 POWERLINE N-CHANNEL IGBT WITH OPTIONAL ULTRAFAST DIODE Th e IT E 4 0X 06 is a robust n-channel, enhancem ent mode insulated gate bipolar transistor IG BT designed tor
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ITE40F06/ITE40C06
ITE40X06
37bflS22
QQ2b402
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MK005CL4
Abstract: 8803c MK010A1 MK010D1 MK010E4 MK010F1 MK010N1 UL-1950 MK010
Text: Data Sheet August 1996 microelectronics group Lucent Technologies Bell Labs Innovations MK010-Series Power Modules: 36 Vdc to 75 Vdc Input Features • Small size: 2.00 in. x 1.69 in. x 0.50 in. ■ Metal case with ground pin ■ Wide input voltage range: 36 Vdc to 75 Vdc
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MK010-Series
MW010-Series)
DS96-049EPS
DS93-038EPS)
MK005CL4
8803c
MK010A1
MK010D1
MK010E4
MK010F1
MK010N1
UL-1950
MK010
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