Untitled
Abstract: No abstract text available
Text: blE » • SO^EMA 00243b5 740 « T 0 S 2 TC5053P.TC5054P TC5053P TC5054P C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC_ TOSHIBA L O G I C / N E N O RY 4-DIGIT UP/DOWN DECADE COUNTER 4-DIGIT UP/DOWN DECADE COUNTER T C 5 0 5 3 P / T C 5 0 5 4 P is a 4-digit decimal u p/down counter
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00243b5
TC5053P
TC5054P
TC5053P
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N 407 Diode
Abstract: Philips MBB BAV74
Text: • hbS3T31 N AMER 00243b3 407 ■ PHILIPS/DISCRETE APX b7E BAV74 D SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The device consists o f tw o diodes in a m icrom iniature plastic envelope. The cathodes are commoned and the device is intended fo r high-speed switching in thick and thin -film circuits.
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hbS3T31
Q0243b3
BAV74
OT-23.
N 407 Diode
Philips MBB
BAV74
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Untitled
Abstract: No abstract text available
Text: S i GEC PLESSEY ADVANCE INFORMATION SE MI CONDUCT ORS VP510 Bl DIRECTIONAL COLOUR SPACE CONVERTER FEATURES DESCRIPTION • User definable colour space conversion I Sampling rates up to 27 MHz I On chip decimating or interpolating FIR filters ■ Conversion from 24 bit inputs to 16 bit outputs or vice
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VP510
VP510
37bfl522
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007H
Abstract: AN-994 IRF530S IRL2203N IRL2203S T35 diode DIODE marking code SJ
Text: PRELIMINARY International I R Rectifier PD 9.1091 A IRL2203S HEXFET Power MOSFET • Logic-Level Gate Drive • Surface Mount • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated
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