002007 Search Results
002007 Price and Stock
Molex 5600200720CONN HEADER SMD 7POS 2MM |
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5600200720 | Reel | 8,450 | 650 |
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5600200720 | Reel | 650 |
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5600200720 | Reel | 2,600 | 12 Weeks | 650 |
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5600200720 | 8 Weeks | 3,900 |
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Vishay Beyschlag AC05000002007JAC00RES 0.2 OHM 5W 5% AXIAL |
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AC05000002007JAC00 | Cut Tape | 5,058 | 1 |
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Vishay Beyschlag AC03000002007JAC00RES 0.2 OHM 3W 5% AXIAL |
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AC03000002007JAC00 | Cut Tape | 1,943 | 1 |
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Vishay Beyschlag AC01000002007JA100RES 0.2 OHM 1W 5% AXIAL |
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AC01000002007JA100 | Cut Tape | 1,786 | 1 |
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Vishay Beyschlag PAC500002007FAC000RES 0.2 OHM 5W 1% AXIAL |
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PAC500002007FAC000 | Cut Tape | 1,162 | 1 |
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002007 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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00 20 07 US1 | KNIPEX | 3 PC ALLIGATOR PLIERS SET | Original |
002007 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TOSHIBA ^0^7240 002007b 7 TT TC551001BPI/BFI/BFII/BTRI-85L/10L SILICON GATE CMOS 131,072 WORD X 8 BIT STATIC RAM Description The TC551001BPL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power |
OCR Scan |
002007b TC551001BPI/BFI/BFII/BTRI-85L/10L TC551001BPL TC551001 | |
Contextual Info: H ISIE G â235bG5 0020077 s SIEMENS SIEMENS A KT IE NGESELLSCHAF 47E T> T -39-/5 SIMOPAC MOSFET Module ^03 A ^DS on) • • • • • • BSM 121 AR (C) = 200 V = 130 A '=» 20 mfl Power module Single switch N channel Enhancement mode Package with insulated metal base plate |
OCR Scan |
235bG5 C67076-S1014-A2 235b05 535b05 T-39-15 | |
HBT 01 - 01G
Abstract: DG20
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MSC23T/PV2720A-XXBS9 152-Word 72-Bit MSC23T/DV2720A-xxBS9 16-Mb 168-pin 72-bit HBT 01 - 01G DG20 | |
"Crystal Oscillator" 4mhz
Abstract: 47C242A t0s3
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OCR Scan |
TMP47C242A TMP47C242AN 47C242A theTLCS-47 128x4-bit SDIP30 TMP47C940AE "Crystal Oscillator" 4mhz t0s3 | |
m51164
Abstract: MSM5116405A M5116405
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OCR Scan |
MSM5116405A_ 304-Word MSM5116405A 26/24-pin cycles/64 m51164 M5116405 | |
Contextual Info: SILICON MONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TA8083F TENTATIVE DATA DUAL DC MOTOR DRIVER The TA8083F contains two motor driver circuits with a current capacity of 0.5A for directly driving bidirectional DC motors. Inputs DI1 A /B and DI2 A /B are combined |
OCR Scan |
TA8083F TA8083F | |
Behavioral verilog model
Abstract: "li shin" ac adapter
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16-038-PQE240-3 DT116 M002-044 BGD256 256-Pin 16-038-BGD256-1 DT104 M002-045 BGD352 352-Pin Behavioral verilog model "li shin" ac adapter | |
jk 13001 TRANSISTOR
Abstract: jk 13001 13001 S 6D TRANSISTOR jk 13001 h signo 723 operation manual jk 13001 E bd4 lsi logic 0 281 020 099 SIS transistors 13001 s bd 13001 S 6D TRANSISTOR circuit
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LCA500K 043/G LCA500K jk 13001 TRANSISTOR jk 13001 13001 S 6D TRANSISTOR jk 13001 h signo 723 operation manual jk 13001 E bd4 lsi logic 0 281 020 099 SIS transistors 13001 s bd 13001 S 6D TRANSISTOR circuit | |
Contextual Info: KMM332V213AJ/AT DRAM MODULE KMM332V213AJ/AT Fast Page Mode 2Mx32 DRAM DIMM based on 2Mx8 Low Power, 2K Refresh , 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM332V213A is a 2M bit x • Performance Range: 32 Dynamic RAM high density memory module. The Samsung KMM332V213A consists of four |
OCR Scan |
KMM332V213AJ/AT KMM332V213AJ/AT 2Mx32 KMM332V213A 28-pin 72-pin KMM332V213A-L6 KMM332V213A-L8 | |
327LContextual Info: 7 8 6 5 4 3 2 1 DRAWING MADE IN THIRD ANGLE PROJECTION T H IS DRAWING IS UNPUBLISHED. COPYRIGHT 19 RELEASED FOR P U B L IC A T IO N BY AMP PIN INCORPORATED. DIST LOC ,19 AR ALL INTERNATIONAL RIGHTS RESERVED. R E V IS IO N S 84 ZONE 1 .0 1 0 + 0 .0 7 5 DIA |
OCR Scan |
175S-3 2J-AUGZ97_ v026d/^ 327L | |
cl63c
Abstract: BTCL
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b427525 uPD72111 64-Pin fiPD72111 16-bit PD72111 /hPD72111 juPD72111 cl63c BTCL | |
Contextual Info: M ic r o c h ip PIC16C6X 8-Bit CMOS Microcontrollers Devices included in this data sheet: PIC16C61 • PIC16C64A PIC16C62 • PIC16CR64 PIC16C62A • PIC16C65 PIC16CR62 • PIC16C65A PIC16C63 • PIC16CR65 PIC16CR63 • PIC16C66 PIC16C64 • PIC16C67 • Low-power, high-speed CMOS EPROM/ROM |
OCR Scan |
PIC16C6X PIC16C61 PIC16C64A PIC16C62 PIC16CR64 PIC16C62A PIC16C65 PIC16CR62 PIC16C65A PIC16C63 | |
STR 6656
Abstract: transistor str 6656 13001 TRANSISTOR Transistor mcr 22-8 413 mark 74w npn SI 13003 str 12006 atmel 0744 13001 TRANSISTOR equivalent str 10006
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ZM-40D/L, ZM-61E/T, ZM-70D/T Appendix17 ZM-31SE) RS422] Appendix18 STR 6656 transistor str 6656 13001 TRANSISTOR Transistor mcr 22-8 413 mark 74w npn SI 13003 str 12006 atmel 0744 13001 TRANSISTOR equivalent str 10006 | |
Contextual Info: PD -9.1484A International IO R Rectifier IRF9Z24N PRELIMINARY HEXFET^ Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Voss = -55V ^ D S o n = |
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IRF9Z24N | |
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Contextual Info: PRELIMINARY CMOS DIGITAL INTEGRATED CIRCUIT KS0788 Introduction KS0788 is a segment and common driver with 160 channel for a large scale dot matrix LC D . Th is device is LC D driver having multi output, 1/400 duty. LC D driving voltage of this device is 40 V . |
OCR Scan |
KS0788 KS0788 160CH 12MHz 197PIN 60-QFP-1414A 64-QFP-U20D | |
Contextual Info: R96FT Integral Modems Rockwell R96FT 9600 bps Fast Train Modem INTRODUCTION FEATURES The Rockwell R96FT is a synchronous serial 9600 bps modem designed for multipoint and networking applications. The R96FT allows full-duplex operation over 4-wire dedicated uncondition |
OCR Scan |
R96FT R96FT 29FT/9600/7200/4800, 27FT/4800, 27FT/2400. 96S-6043-0531-1, R196B32R00A00Z1, 0G20D70 | |
Contextual Info: 1 n Th I wo tm m w w jterio w T H IS OHAWING IS U N PU B LIS H E D . ¿opvnjSHt ia BIST ftELEA SeO F Oft PU B L IC A T IO N •V AHP IMCflAPOAATCD. M.L INTSUMI ION*. BD MStAVCO, 95 a n e * i» r tM NPR 4814 WAS 93-0996-4-1 REV PER EC 0020-952-93 A0060 -2 i REV PER EC 0020-370-94 |
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A0060 -SEP-92. ss35337_ | |
QML-38535
Abstract: GDIP4-T28 smd "vhz"
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OCR Scan |
TD0470Ã QML-38535 GDIP4-T28 smd "vhz" | |
videocrypt
Abstract: philips Ap100 0020-04B J171 J172 PQFP64 STV0020 E3233 22-25L
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STV0020 PQFP64 STV0020 videocrypt philips Ap100 0020-04B J171 J172 PQFP64 E3233 22-25L | |
BUW52
Abstract: transistor st z7 S877 transistor 026a N1010A Scans-007954 LC8a DQ26A
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OCR Scan |
BUW52 O-218 BUW52 transistor st z7 S877 transistor 026a N1010A Scans-007954 LC8a DQ26A | |
Contextual Info: November 1996 Revision 1.0 FUJITSU D A T A S H E E T - EDC4B V724 2/4 -(60/70)(J/T)G-S 32MByte (4M x 72) CMOS EDO DRAM Module - 3.3V (ECC), Buffered Generai Description The EDC4BV724(2/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module |
OCR Scan |
32MByte EDC4BV724 32-megabyte 168-pins, MB81V1 74ABT16244 168-pin 450-j 4T75b | |
RX 3E
Abstract: RX-3E 8 Radio Corporation of America 252B marking LT 5216 1965-REVISED rca RX- 3E sur 288 SRDL oa 1160
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Z80A CPU
Abstract: Z80A
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OCR Scan |
1000H, 1000H Z80A CPU Z80A | |
Contextual Info: O K I Semiconductor MSM5 1 16405A 4,194,304-Word x 4-Bit DYNAM IC R AM : FA S T P A G E M O D E T Y P E WITH ED O DESCRIPTION The MSM5116405A is a4,194,304-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116405A achieves high integration, high-speed operation, and low-power |
OCR Scan |
6405A 304-Word MSM5116405A 26/24-pin cycles/64 |