IRF9Z24N Search Results

Contextual Info: P D - 91742 International Iö R Rectifier IRF9Z24NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF9Z24NS • Low-profile through-hole (IRF9Z24NL) • 175°C Operating Temperature • P-Channel • Fast Switching • Fully Avalanche Rated

Contextual Info: PD - 91742 International IGR Rectifier IRF9Z24NS/L HEXFET Power MOSFET • • • • • • • A dvanced Process Technology Surface M ount IRF9Z24NS Low-profile through-hole (IRF9Z24NL) 1 7 5 °C O perating Tem perature P-Channel Fast Switching Fully Avalanche Rated

IRF9Z24NLPBF

Abstract: IRL3103L IRF9Z24NS
Contextual Info: PD- 95770 IRF9Z24NSPbF IRF9Z24NLPBF • Lead-Free www.irf.com 1 04/25/05 IRF9Z24NS/LPbF 2 www.irf.com IRF9Z24NS/LPbF www.irf.com 3 IRF9Z24NS/LPbF 4 www.irf.com IRF9Z24NS/LPbF www.irf.com 5 IRF9Z24NS/LPbF 6 www.irf.com IRF9Z24NS/LPbF www.irf.com 7 IRF9Z24NS/LPbF

Contextual Info: PD -9.1484B IRF9Z24N HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D VDSS = -55V l RDS on = 0.175Ω G ID = -12A S Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD- 95770 IRF9Z24NSPbF IRF9Z24NLPBF • Lead-Free www.irf.com 1 04/25/05 IRF9Z24NS/LPbF 2 www.irf.com IRF9Z24NS/LPbF www.irf.com 3 IRF9Z24NS/LPbF 4 www.irf.com IRF9Z24NS/LPbF www.irf.com 5 IRF9Z24NS/LPbF 6 www.irf.com IRF9Z24NS/LPbF www.irf.com 7 IRF9Z24NS/LPbF

Contextual Info: PD -9.1484A International IO R Rectifier IRF9Z24N PRELIMINARY HEXFET^ Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Voss = -55V ^ D S o n =

Contextual Info: IRF9Z24N TO-220AB l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Power MOSFET Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

Contextual Info: IRF9Z24NS/L l l l l l l l Advanced Process Technology Surface Mount IRF9Z24NS Low-profile through-hole (IRF9Z24NL) 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated TO-263 TO-262 Description The D2Pak is a surface mount power package capable of

f9z24

Contextual Info: PD-9.1484A International I O R Rectifier IRF9Z24N HEXFET Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated V dss = -55 V R iDS on = 0.1750 lD = -12A

ITE 85

Abstract: IRF9Z24NLPBF IRL3103L marking code 601 D2Pak Package
Contextual Info: PD- 95770 IRF9Z24NSPbF IRF9Z24NLPBF • Lead-Free www.irf.com 1 04/25/05 IRF9Z24NS/LPbF 2 www.irf.com IRF9Z24NS/LPbF www.irf.com 3 IRF9Z24NS/LPbF 4 www.irf.com IRF9Z24NS/LPbF www.irf.com 5 IRF9Z24NS/LPbF 6 www.irf.com IRF9Z24NS/LPbF www.irf.com 7 IRF9Z24NS/LPbF

IRF9Z24N

Abstract: IRF9Z24NL IRF9Z24NS
Contextual Info: PD - 91742 IRF9Z24NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z24NS l Low-profile through-hole (IRF9Z24NL) l 175°C Operating Temperature l P-Channel l Fast Switching l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.175Ω

IRF9Z24N

Abstract: P-Channel irf IRf 48 MOSFET
Contextual Info: PD -9.1484B IRF9Z24N HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS on = 0.175Ω G ID = -12A S Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 91742A IRF9Z24NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z24NS l Low-profile through-hole (IRF9Z24NL) l 175°C Operating Temperature l P-Channel l Fast Switching l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.175Ω

IRf 48 MOSFET

Abstract: IRF9Z24N
Contextual Info: PD -9.1484B IRF9Z24N HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS on = 0.175Ω G ID = -12A S Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 94982 IRF9Z24NPbF • Lead-Free www.irf.com 1 02/05/04 IRF9Z24NPbF 2 www.irf.com IRF9Z24NPbF www.irf.com 3 IRF9Z24NPbF 4 www.irf.com IRF9Z24NPbF www.irf.com 5 IRF9Z24NPbF 6 www.irf.com IRF9Z24NPbF Peak Diode Recovery dv/dt Test Circuit + D.U.T * ƒ Circuit Layout Considerations

IRF9Z24NL

Abstract: IRF9Z24NS
Contextual Info: PD - 91742A IRF9Z24NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z24NS l Low-profile through-hole (IRF9Z24NL) l 175°C Operating Temperature l P-Channel l Fast Switching l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.175Ω

F1010

Abstract: IRF9Z24N 2D 1002 diode IRf9z24n P-channel power
Contextual Info: PD -9.1484A International IGR Rectifier IRF9Z24N PRELIMINARY H E XFE T Pow er M O S F E T • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated V q s s = -55 V

irf9z24n

Contextual Info: PD -9.1484 International IQ R Rectifier IRF9Z24N PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated V dss V = -5 5 R ü S o n = 0 . 1 7 5 Q

f1010

Abstract: IRF9Z24NPBF
Contextual Info: PD - 94982 IRF9Z24NPbF • Lead-Free www.irf.com 1 02/05/04 IRF9Z24NPbF 2 www.irf.com IRF9Z24NPbF www.irf.com 3 IRF9Z24NPbF 4 www.irf.com IRF9Z24NPbF www.irf.com 5 IRF9Z24NPbF 6 www.irf.com IRF9Z24NPbF Peak Diode Recovery dv/dt Test Circuit + D.U.T * ƒ Circuit Layout Considerations

diode IR 132 E

Abstract: f1010 Diode marking CODE 5M ir 046 h
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IRf 48 MOSFET

Abstract: IRF9Z24N
Contextual Info: PD -9.1484A IRF9Z24N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS on = 0.175Ω G ID = -12A S Fifth Generation HEXFETs from International Rectifier

IRF9Z24N

Abstract: IRF9Z24NL IRF9Z24NS
Contextual Info: PD - 91742A IRF9Z24NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z24NS l Low-profile through-hole (IRF9Z24NL) l 175°C Operating Temperature l P-Channel l Fast Switching l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.175Ω

Contextual Info: IRFR/U9024N D -P a k T O -2 52 A A l l l l l l l I-P a k TO -2 5 1 A A Ultra Low On-Resistance P-Channel Surface Mount IRFR9024N Straight Lead (IRFU9024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Description D The D-Pak is designed for surface mounting using

sumida 94V-0

Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
Contextual Info: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.