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    Text: N AMER PHILIPS/DISCRETE DbE D h b S a ^ l 001ETA2 3 A BF980 T- SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended for u.h.f. applications, such as u.h.f. television tuners, with 12 V supply voltage.


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    001ETA2 BF980 PDF