001B324 Search Results

IR E78996

Abstract: 6J450 T45 diode 6H450 E78996 rectifier module E78996 diode FK 330
Contextual Info: INTERNATIONAL RECTIFIER bSE J> Wt 4ÛSS452 001b3E3 750 • INR Bulletin E27113 International IxqrIRectifier IRFK6H450,IRFK6J450 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996.

Contextual Info: DS1215 DALLAS SEMICONDUCTOR DS1215 Phantom Time Chip FEATURES PIN ASSIGNMENT • K eeps track of hundredths o f seconds, seconds, min­ utes, hours, days, d ate of th e m onth, m onths, and years • Adjusts for m onths with fe w er than 31 days • Leap y e a r autom atically corrected up to 2 1 0 0

2SB1417

Abstract: 2SB1417A 2SD2137
Contextual Info: Power T ransistors 2 S B 1 4 1 7 , 2SB1417, 2SB1417A 2 S B 1 4 1 7 A Silicon PNP Epitaxial Planar Type • P ackage Dim ensions Pow er Am plifier C om plem entary Pair with 2 S D 2 1 3 7 ■ Features • H igh DC c u r re n t gain I if e an d good lin earity

DL05L

Abstract: lm 739 dl051d ODCSXE04 180 nm CMOS standard cell library AMI DL021D M91C360 ami 0.6 micron micron37 ami equivalent gates
Contextual Info: Library Characteristics AMI AMERICAN MICROSYSTEMS, INC Description • Cost driven architecture: - Offers both 2 and 3 level metal interconnect to provide the lowest user cost for the number of gates and pads required. - Compiled memory blocks on standard cells are

Contextual Info: S A H S U N 6 E L E C T R O N I C S I N C b 7 E I> • 7 T L > 4 1 4 2 KM48C2100 0 Q l b 3 1 4 7 7 2 I SMGK CMOS DRAM 2 M x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM48C2100 is a CMOS high speed