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    Abstract: No abstract text available
    Text: PowerMOS transistor_ F AMER PHILIPS/DISCRETE BUZ31 DbE D • LbS3T31 0014444 ~1 ■ rsi-n May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    BUZ31 LbS3T31 T-39-11 BUZ31_ 001444c PDF