bo434
Abstract: b0436 TRANSISTOR BD 437 BD 434 transistor BD 141 BD436 DIN137 80442 transistor 438 Q62702-D202
Text: - ESC D • ÖS35L.05 000M3bfl 3 M S I E â 8236320 SIEMENS/ SPCL. SEMICONDS • r- j w ? BD 434 PNP Silicon Epibase Transistors BD 436 J6 8 D _ SIEMENS AKTIEN6ESELLSCHAF - BD 438 BD 440 BD 442 Pow er transistors for com plem entary A F stages
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00043bfl
BD434
BD440
BD442
BD441.
t25mn
434/BD
436/BD
023SbOS
G00437H
bo434
b0436
TRANSISTOR BD 437
BD 434
transistor BD 141
BD436
DIN137
80442
transistor 438
Q62702-D202
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MTD8000M3B-T
Abstract: No abstract text available
Text: Photo Transistor Product No: M T D 8 000M3B-T Peak Sensitivity Wavelength: 880nm The 000M3B-T is a photo transistor in a ceramic package. It is well suited for high reliability and high sensitivity applications. FEATURES APPLICATIONS > High Reliability in Demanding Environments
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000M3B-T
880nm
MTD8000M3B-T
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mqc505-902 murata
Abstract: mqc505 murata murata mqe001 MQC505-978 MQE001 Mqc505 MuRata MQE504-964
Text: 000M35B ^ F. \ AS " " ? W «S o n lS f f « “ i,c'a,ure9aB" persona» Radio WC A P a d '° MOCSOOSene» d \w en s ^ n - — mqC200 Señes MOC300 Series nuRATA ERIl NO RT H A M E R I C A 47E I • b 3 1 8 8 t 5 Ü 0 0 M 3 5 3 bS3 « H E N A r$ D vco SPECIFICATIONS
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000M35B
mqC200
MOC300
MQC309-836
MQE001-836
MQC505-978)
MQC505-978
MQC500/30Q/200
10B0P
100DP
mqc505-902 murata
mqc505 murata
murata mqe001
MQC505-978
MQE001
Mqc505
MuRata MQE504-964
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transistor D 288
Abstract: TRANSISTOR L 287 A BD288 K1768 S100 transistor tcam BD287 Q62702-D900 Q62702-D901 Q62902-B62
Text: 2SC D • T - 3 3-'? fl23Sb05 000M3M2 7 M S I E 6 BD 287 BD 288 PIMP Silicon Planar Transistors SIEMENS AKTIENGESELLSCHAF 04342 °- BD 287 and BD 288 are epitaxial planar transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector Is electrically connected to the metallic mounting area.
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fl23SbG5
0Q043M2
T-33-'
Q62702-D900
Q62702-D901
Q62902-B63
Q62902-B62
QQ0M345
transistor D 288
TRANSISTOR L 287 A
BD288
K1768
S100 transistor
tcam
BD287
Q62702-D900
Q62702-D901
Q62902-B62
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MSC2312YS9
Abstract: c2312 54SMO
Text: O K I SEMICONDUCTOR C U SII GROUP IDE D j| ^ 7 5 4 5 4 0 000M3Sti 1 | » m ie o n tìu G to * * •' 111 MSC2312YS9/KS9 • J ' . 4 " 1 ,0 4 8 ,5 7 6 BY 9 B IT D Y N A M IC RAM M O D ULE GENERAL D E S C R IP TIO N The Oki MSC2312YS9/KS9 is a fully decoded, 1,048,576 words X 9 bit CMOS dynamic random
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MSC2312YS9/KS9
MSC2312YS9/KS9
MSM5110OOJS)
MSM511000JS;
30-Pin
b7S4540
D043ba
ram-msc2312ys9/ks9
T-46-23-17
MSC2312YS9
c2312
54SMO
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l3lx
Abstract: r2 137 000M37S EZ1087 EZ1580 EZ1900 P55C
Text: M T r @ C = í] REGULATOR BALANCE CONTROLLER EZ1900 TEL: 805-498-2111 DEVICE SELECTION GUIDE FEATURES • Current balance controller for regulators in parallel • Slave and non-slave voltage modes • Slave or non-slave mode computer selected • Compatible with 3 or 5 pin low drop regulators
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EZ1900
ez1900cs
P54CS
AMD5K86â
EZ1580
10OmV
D00M37Ã
l3lx
r2 137
000M37S
EZ1087
EZ1900
P55C
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Untitled
Abstract: No abstract text available
Text: ON SCREEN DISPLAY MIX 1C NJM2252 N JM 2252 is the IC th a t has been developed for V C R ap p licatio n , w hich has the super-im pose function as w ell as the function to drive the S-VH S, S -output p in by p u ttin g the external transistor. N JM 2252 h a s Y signal p in a n d C signal pin o f each in d ep en d en t circuit in it. Y singal line is selectable o f 4 inputs, a n d C
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NJM2252
G00M35Q
D0D4351
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Untitled
Abstract: No abstract text available
Text: fíl Supertex inc. VN3515L VN4012L N-Channel Enhancement-Mode Vertical DMOS FETs BVDSS/ R DS ON ^GS(th) B V dgs (max) (max) 350V 15Q 1.8V 400V 12£2 1.8V 1Í Ordering Information Order Number / Package TO-39 TO-92 0.15 A — VN3515L 0.15A VN4012B VN4012L
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VN3515L
VN4012L
VN4012B
100mA
100mA,
TN06D
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Untitled
Abstract: No abstract text available
Text: SPTS2 I 6 S P T 16-BIT ULTRAHIGH SPEED DAC SIGNAL PROCESSING TECHNOLOGIES FEATURES APPLICATIONS • • • • • • • • • • Fast Settling Time -15 0 nsec Excellent Linearity T. C. 1.5 ppm/°C On-Chip Band-Gap Voltage Reference On-Chip Application Resistors for Gain Selection
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16-BIT
SPT5216
SPT5216BCJ
SPT5216CCJ
SPT5126BCQ
SPT5126CCQ
SPT5216CCU
32-Lead
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PDF
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Untitled
Abstract: No abstract text available
Text: .100" X .075" Compact Wiremount Socket .050" Pitch Cable Optional Metal Strain Relief 501 Series Thin profile Consumes less vertical space Economy in system layouts Uses standard .050 inch cable and pc board hole pattern No change in current design Retro-fit with no print changes
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TS-0322-08
QQ-N-290,
MIL-G-45204,
502XX
3448-501XX
501XX-B000
000M310
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ECG902
Abstract: class g power amplifier schematic Operational Transconductance Amplifier 4000 w power amplifier circuit diagram class d ECG177 002 UMI Philips ECG 012
Text: ECG PHILIPS E C G INC 17E J m bbSBTSÖ 000432Ö S • T ~ 7 ^ " ^ 0 ECG902 S e m ic o n d u c to rs Operational Transconductance Amplifier Features • Slew rate unity gain, compensated : S0\//pm • Adjustable power consumption: 10 jjW to 30 m W • Flexible supply voltage: ± 2 V t o ±15 V
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00043EÃ
ECG902
ecg902
A4-V01T
ECG177
class g power amplifier schematic
Operational Transconductance Amplifier
4000 w power amplifier circuit diagram class d
ECG177
002 UMI
Philips ECG 012
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UTM fuse resistor
Abstract: Ericsson tma Diode SCR 5v nf2 -12V RELAY v80b VDR Siemens tma cm ericsson ericsson axe LSHA relay 12v 200 ohm
Text: ERICSSON COMPONENTS ERICSSON INC lb E » • 3 3 7 3 b ñ 0 G00142L, 7 ■ ^ September 1989 _ T- 75 - //- /7 PBL 3796, PBL 3796/2 Subscriber Line Interface Circuit Description Key features PBL 3796 63 V and PBL 3796/2 (48 V) are analog Subscriber Line Interface Circuits
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3373bfl0
75-//-/J
0to70Â
PBL3796J
PBL3796/2J
3796/2CC
UTM fuse resistor
Ericsson tma
Diode SCR 5v
nf2 -12V RELAY
v80b
VDR Siemens
tma cm ericsson
ericsson axe
LSHA
relay 12v 200 ohm
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Untitled
Abstract: No abstract text available
Text: m • Ml Chtttw orth, CA M ic m s e m ProgressPoweredbyTechnology i 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 Features • • • • • 6 Amp Single Phase Bridge Rectifier 50 to 1000 Volts Low Leakage Low Forward Voltage
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RS601
RS602
RS603
RS604
RS605
RS606
RS607
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hy5116100
Abstract: No abstract text available
Text: »HYUNDAI H Y 5 1 1 6 1 O O A S e r ie s 16M X 1 -bit CMOS DRAM DESCRIPTION The H Y 5 1 1 6 1 0 0 A isth e new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5116100A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide
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HY51161OOA
HY5116100A
HY51161
C1801
4b750Ã
1AD19-10-MAYÃ
HY5116100AJ
HY51161OOASLJ
hy5116100
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X-000005
Abstract: NJM2247 NJM2256 NJM2256M ltna X000005500
Text: VIDEO COLOR SUPERIMPOSER NJM2256 N J M 2 2 5 6 is th e m u lti-fu n c tio n a l c o l o r s u p e r-im p o s e r IC f o r v id e o b a s e b a n d Y , R - Y , B -Y , V a r io u s ty p e o f Y , R -Y , B-Y o u tp u t s ig n a ls c a n b e m a d e b y th e d ig ita l c o n tro lle d sig n als.
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NJM2256
NJM2256
NJM2247.
350mW
Q0G43b5
5-172-New
X-000005
NJM2247
NJM2256M
ltna
X000005500
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SW 5189 C
Abstract: sw7 357 NJM2262
Text: 2-INPUT VIDEO SUPERIMPOSER NJM2262 NJM 2262 is a 2input video superimposer, inculuding video switch circuit that consist of four Y signal circuit and one C signal circuit. Its impose voltage is set up white level and black level but You can fix its impose voltage.
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NJM2262
300mW
l-125
000M3flT
96-New
SW 5189 C
sw7 357
NJM2262
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PDF
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CSB500F2
Abstract: constant time delay 000M370 HJM2257 NJM2257
Text: SYNCHRONOUS SEPARATOR W IT H AFC NJM2257 N JM 2 2 5 7 ex cu tes H o riz o n ta l a n d V e rtic a l s y n c h r o n o u s s ig n a l s e p a ra tio n , a n d o d d /e v e n fie ld s ig n a l d e te c tio n , fro m c o m p o s it v id e o sig n als. B u ilt-in 1 /2 fH K ille r F u n c tio n c ir c u it c a n m a k e s ta b iliz a tio n o f th e H o r iz o n ta l s ig n a l o s c illa tio n o u tp u t d u rin g
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NJM2257
NJM2257
500mW
350raW
37iis
0Q0M374
CSB500F2
constant time delay
000M370
HJM2257
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PDF
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Untitled
Abstract: No abstract text available
Text: fcT I ISI E G 2SC D • Ö235b05 G0G4352 T NPN Silicon Planar Transistor BD 424 T- 23- o f SIEMENS AKTIEN6ESELLSCHAF 25C 04352 BD 424 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. It is particularly intended for use as driver transistor in horizontal deflection stages of TV sets
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235b05
G0G4352
Q62702-D1068
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PDF
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Untitled
Abstract: No abstract text available
Text: GENL INSTR/ PO WER 3flE D • 30 TG 13 7 DG DM 3Q 1 b ■ 6IC MBR2090CT AND MBR20100CT SCHOTTKY RECTIFIER VOLTAGE RANGE -90 and 100 Volts CURRENT - 20.0 Amperes FEATURES Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Metal to silicon rectifier,
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MBR2090CT
MBR20100CT
O-220CT
O-220
000M302
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PDF
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Untitled
Abstract: No abstract text available
Text: A p p lic a tio n N o te s A V A I L A B L E AN9 * A N 1 8 * AN31 • AN37 • AN40 X25020 2K 256 x 8 Bit SPI Serial E2PROM With BLOCK LOCK PROTECTION FEATURES DESCRIPTION • 1MHz Clock Rate • SPI Modes 0,0 & 1,1 • 256 X 8 Bits — 4 Byte Page Mode
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X25020
D0Q43flf
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PDF
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Untitled
Abstract: No abstract text available
Text: Jüar 128 Bit X24001 1 6 x 8 Bit ldenti PROM FEATURES DESCRIPTION • 2.7V to 5.5V Power Supply • 128 Bit Serial E2PROM • Low Power CMOS —Active Current Less Than 1mA —Standby Current Less Than 50 xA • Internally Organized 1 6 x 8 • 2 Wire Serial Interface
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X24001
X24001
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Untitled
Abstract: No abstract text available
Text: a'JE D P O W E R E X INC • TBTMbEl ODGMBTO 3 » P R X Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G, Durand, BP107, 72003 Le Mans, France (43) 41.14.14 KE721KA1HB High-Beta Six-Darlington Transistor Module
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BP107,
KE721KA1HB
Amperes/1000
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EL2001
Abstract: j004 EL2001ACN EL2001C EL2001CM EL2001CN MIL-I-45208A
Text: H’C-H »HRFOkWANCE AN4J3S INTEGRATED C ^ C J'T S EL2001C Low Power, 70 MHz Buffer Amplifier F e a tu r e s G en era l D e sc r ip tio n • • • • • • • • • • The EL2001 is a low cost monolithic, high slew rate, buffer amplifier. Built using the Elantec monolithic Complementary
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EL2001C
EL2001ACN
MDP0031
EL2001CM
20-LesdSOL
MDP0027
EL2001CN
EL2001
monoli16
j004
EL2001C
MIL-I-45208A
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PDF
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Untitled
Abstract: No abstract text available
Text: = = = = = = = = r= 7 = IB M 0 4 3 6 1 1 R L A B IB M 0 4 1 8 1 1 R L A B Preliminary 32K X 36 & 64K X 18 SRAM Features • Registered Outputs • 32 K x 36 or 64K x 18 Organizations • Asynchronous Output Enable and Power Down Inputs • 0.5 Micron CMOS Technology
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03H9039
SA14-4658-03
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PDF
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