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    01-3316

    Abstract: No abstract text available
    Text: SEMELAB PLC bOE T> m 013316? 000D73D 3S3 • S M L B INI _ i s MOS POWER = V r= IN I ä SML1001R1AN 1000V 9.5A 1.1 Oft SML901R1AN 900V 9.5A 1.1 OQ SML1001R3AN 1000V 8.5A 1.30Q SML901R3AN 900V 8.5A 1.3012 SEM E LAB N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		PDF 000D73D SML1001R1AN SML901R1AN SML1001R3AN SML901R3AN 901R1AN 1001R1 901R3AN 1001R3 100mS 01-3316

    175PF

    Abstract: Z80F
    Text: Z60F Z80F Z100F HIGH VOLTAGE RECTIFIERS EPOXY MOLDED, 200nS RECOVERY V RWM = AXIAL LEADED = RR 500mA = 200nS • 200 ± . 015 5.08±.38 ■250±.015 (6.35±.38) in.(mm) 6000-10000V ■060±.003 (1,52±.06) .40(10.16) Min. ELECTRICAL CHARACTERISTICS AND MAXIMUM RAT NGS


    OCR Scan     		PDF 200nS Z100F 000-10000V 500mA 200nS 600mA 100-C 50VDC Z100F 000D73D 175PF Z80F