0004L Search Results

MB88307

Abstract: MB88306 DI 8306 nmos shift register
Contextual Info: FUJITSU MICROELECTRONICS T? dY | 374T7L.E 0004L.2h 1 | T T - S 2 '3 3 '0 3 FUJITSU • M B 8 8306 M B 88307 M B 88 308 M B 88309 Octobers CMOS Output Expander DESCR IPT IO N Each of the four expanders provides a lêfial I/O port and an 8-blt paral­ lel output port. Data is serially loaded via the input port, converted to an

MB8841

Abstract: P20-P23
Contextual Info: FUJITSU MIC RO EL EC TR ON IC S T7 FU JITSU DE § 3 7 ^ 7 ^ 2 0004LDS 4 | NMOS -INPUT/OUTPUT EXPANDER T -&-33 - o 3 MB 88304 MB 88305 April 1986 Edition 1.1 NMOS INPUT/OUTPUT EXPANDER The Fujitsu MB 8 8 3 0 4 /M B 8 8 3 0 5 are peripheral integrated circuits that can be

ECG1178

Contextual Info: PHILIPS E C G INC 17E ^[=53=520 0004Li2ti 2 T -7 7 -0 7 -0 9 ECG1178 Chroma Demodulator S e m ic o n d u c t o r s I4 I3 12 II Features • Double balance synchro demodulator • Sm all thermal coefficient and dc un­ balance voltage of mutual 3 color signals

Contextual Info: F eatures □ Serial |i-coded M onolithic M ulti-mode Intelligent Term inal SUMMIT with transceivers using ceramic multi-chip-module technology □ Comprehensive MIL-STD-1553 dual redundant Bus Controller (BC), Remote Terminal (RT), and Monitor Terminal (MT)

MD15and

Abstract: SU16
Contextual Info: FUJITSU M I C R O E L E C T R O N I C S °il F U J IT S U D e | 3 7 ^ 7 1 ^ QOD4t.7S 3 | 16 BIT ERROR «CHECKING & CORRECTION T-^ S-i7 -MB1426 I _ 1 A p ril, 1986 E d itio n 1.0 DESCRIPTION The MB1426 Error Checking and Correction ECC device is designed to

Contextual Info: SAMSUNG SE MI CONDU CT OR INC Tfl KA3524 DE 7TL41M5 OO OMbSl b LINEAR INTEGRATED CIRCUIT REGULATOR PULSE WIDTH MODULATOR The KA3524 regulating pulse width modulator contains all of the control circuitry necessary to Implement switching regulators of either

Contextual Info: P ro g ra m m in g UTILITIES TIM E!: A Threefold Digital Timer for Windows Pn h ro u g h its b u ilt-in co n tro ls, th e W in d o w s in te rfa c e d eliv ­ ers b o n u se s to b o th u sers an d p ro g ra m m e rs. U se rs b e n e fit b ec a u se e v ery c o n tro l w ith in

Contextual Info: PHILIPS E C G 17E jj INC m bbS3TEfl GOQUbSÔ ECG T-74-Û5-Û1 S em icon ductors ECG1179 is a monolithic linear integrated cir­ cuit used as a tape recorder pre-amplifier. Features • Low noise, low distortion • Includes A LC transistor • Suitable for pairing with power 1C

Contextual Info: / P H IL IP S E C G INC 17E Q • ECG1193 AF Power Amplifier Se m ico n d u cto rs ECG1193 is a monolithic integrated circuit used as an A F power amplifier. It has 4.S W output power suitable for automotive radio and stereo applications operating at supply

VOGT 545 02 082 00

Abstract: vogt 545 13 084 00 545 02 082 00 vogt vogt -sumida 575 26 sumida 94V-0 VOGT N1 50 545 42 045 00 vogt 545 13 084 vogt 545 23 194 00 SM3261-L 570 16 390 10, VOGT
Contextual Info: Продукция компании ABC TAIWAN ELECTRONICS CORP. ИНДУКТИВНОСТИ SMD ПРИБОР-СИСТЕМЫ Телефон/факс: +7 495 105 00 91(многоканальный) Телефон/факс: +7 (495) 784 61 69(многоканальный)

HY51V16404B

Abstract: HY51V16404BR60 si17 MH-750
Contextual Info: •HYUNDAI HY51V16404B Series 4M x 4-bit CMOS DRAM with Extended Data Out DESCRIPTION TheHY51V16404B is the new generation and fast dynamic RAM organizecU,194,304 x 4-bit. The HY51V16404B utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating

M37732S4AFP

Abstract: m37732 S4BFP mitsubishi 7700 machine instruction
Contextual Info: M IT S U B IS H I M IC RO CO M PUTERS M 37732S4AFP M 37732S4BFP 16-BIT CMOS MICROCOMPUTER M 37732S4FP is un ifie d into M37732S4AFP. DESCRIPTION The M37732S4AFP is a sin g le -c h ip PIN CONFIGURATION TOP VIEW m icro com p uter d e ­ signe d w ith high -pe rform an ce C M O S silicon gate tech nolo­

IC JRC 0820

Abstract: jrc 2267 IC JRC 2267 0820 jrc JRC 0820 2267 jrc JRC 2268 TVS SOT23 712 062 JRC JRC IC 2041
Contextual Info: EL215 0C/EL215 7C 125 MHz Single Supply, Clamping Op Amps l'IGH PCPrC'BMANCE ANAdCGINTEGRATEDCIFCJ''S G en era l D e sc r ip tio n T he EL2150C/EL2157C are th e electronics in d u stry ’s fastest single supply op am ps available. P rio r single supply op am ps

jrc 2296

Abstract: IC JRC 0820 opamp jrc 0820 0820 jrc 062 JRC krt 30 t 026 JRC 0820 JRC 062 JRC OPamp JRC 2293
Contextual Info: EL2257C/EL2357C élantec H IH VANCEANAlOGiTEGRATECCIRCUITS EL2257C/EL2357C 125 MHz Single Supply, Clamping Op Amps F e a tu re s G en eral D escription • Specified for + 3V, + 5 V ,o r ± 5V A pplications • Pow er D ow n to 0 ju,A • O u tp u t V oltage Clam p

Contextual Info: HY5116404B Series »HYUNDAI 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5116404B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116404B utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating

Contextual Info: «HYUNDAI HY5117404B Series 4M x 4-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION The HY5117404B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117404B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: iniXYS MWI 35-12 A! IGBT Modules Sixpack = 45 A = 1200 V VCE 8atlw.= 2.2V v ces Symbol Conditions VCES Tj = 25°C to 150°C v CGR Tj = 25°C to 150°C; Rqe = 20 k£2 vGES v GEM Continuous Transient *C25 ^CSO ' cm *sc (SCSOA Maximum Ratings V V ±20 ±30 V

Contextual Info: DS3F Device DS3 Framer TXC-03401 B DATA SHEET • DS3 payload access, bit-serial or nibble-parallel • C-bit parity or M13 operating mode • C-bit interface 13 C-bits in, 14 out • Detect and generate DS3 AIS, and idle signals • Transmit reference generator for serial operation

M37712

Abstract: M37712M4BXXXFP ScansUX59
Contextual Info: M IT S U B IS H I M IC R O C O M P U T E R S M 37712M 4BXXXFP S IN G L E -C H IP 1 6 -B IT C M O S M IC R O C O M P U T E R DESCRIPTION • Low power dissipation at 25 MHz frequency .95mW (Typ.) • • Interrupts .21 types 7 levels

Contextual Info: P H ILIP S E C G IN C 17E ECG b b S 3 1 Sfl Q0 D4 b l S ECG1175 TV Sound IF and AF Output Subsystems Semiconductors Features • Output power 3 W typ at V + =24 V, RL=16Q • Power amplifier with current limiting and thermal shutdown • W ide power-supply range: 12 V to 33 V

amplifier 15w

Abstract: 4b35 ECG Semiconductors
Contextual Info: PHILIPS E C G INC ECG Semiconductors 17E bb53120 0004b3S ECG1180, ECG1228 AF Power Amplifier 1.5W, 2.1W ECQ1180 and ECG1228 are linear integrated circuits with attached heat sink pin. ECG1180 is a 1.5 W and ECG1228 Is a 2.1 W A F power amplifier. They are both suitable for F M / A M

Contextual Info: < > C il^ A V v A SP7802 v im S IG N A L P R O C E S S IN G E X C E L L E N C E 12-Bit 2|iS Sampling A/D Converter FEATURES • 500k Samples Per Second ■ Standard ± 10V and ±5V Input ■ DC Performance Over Temp: No Missing Codes — 1/2 LSB Integral Linearity Error

Contextual Info: E123MUX Device E1/E2/E3 MUX/DEMUX TXC-03361 DATA SHEET PRODUCT PREVIEW = • Multiplexer/demultiplexer for ITU-T Recommendations: G.742 E2 frame format G.751 (E3 frame format) DESCRIPTION = The E123MUX is a CMOS VLSI device that provides the E13 functions needed to multiplex and demultiplex

mt 10p10

Abstract: 10P10 MT A 10P10 AR 8 2sk2654 2SK2654-01
Contextual Info: FUJI 2SK2654-01 iM iü M e u iM J E FAP-IIS Series N-channet MOS-FET 90 0V > Features - 2Q 8A 150W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated