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    EUPEC T 1078 F

    Abstract: t 250 n 1200 t 63 n 1200 EUPEC T 1099 EUPEC t 1209 T1209 T 250 N 1600 NT1050
    Text: L IE EUPEC D m 34032*17 00013BS S3T « U P E C Phase control thyristors Type Itrmsm V drm It s m / i 2dt Itavm/I c V T0 It (di/dt)cr (dv/dt)or Vqt I qt DIN IEC 747-6 tvj = tvj 25 °C 25 °C sinus RfhJC lyj max Outline V rrm V d s m = Vqrm V rsm = Vrrm + 100 V


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    PDF 0D01325 T1209 EUPEC T 1078 F t 250 n 1200 t 63 n 1200 EUPEC T 1099 EUPEC t 1209 T 250 N 1600 NT1050

    2SC1594

    Abstract: NE77320 33B5 NE77300 NE77310 NE77320T S21E S22E J25-26 1400 88 pm
    Text: N E C / CALIFORNIA b42741M 1SE D 0 0 0 1 3 LjE 3 NE77300 NE77310 NE77320 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • 2 WATTS POWER OUTPUT CLASS C AT 2 GHz The NE773 series of NPN medium power silicon transistors Is especially designed for broadband VHF and UHF amplifiers


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    PDF b42741M 00013LjE NE77300 NE77310 NE77320 NE773 NE77310) stud-strlpline55 2SC1594 NE77320 33B5 NE77320T S21E S22E J25-26 1400 88 pm

    2N3670

    Abstract: 2N692 2N3669 2n4103 2N3668 2N681 2N682 2N683 2N684 2N685
    Text: SCRS Continued IT (AMPS) 16 25 @ TC (°C) 90 90 90 70 90 ITSM (AMPS) 200 200 160 200 250 s & IS f TO-220 T 0 -2 2 0 ( ( K - U CASE TO-3 II U TO-48 Uu u VRRM (VOLTS) 25 2N681.A* 50 2N682.A* 100 2N3668 2N683.A* 150 200 2N684.A* 2N3669 CS3-16B CS220-16B*


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    PDF T0-220 T0-220 2N681 2N682 2N3668 2N683 2N684 2N3669 CS3-16B CS220-16B* 2N3670 2N692 2n4103 2N3668 2N681 2N685

    AK93C45F

    Abstract: C45L AK93C45 AK93C45L AK93C45LF
    Text: ASAHI KASEI [AK93C45/L] _ _ Features_ _ □ ADVANCED CMOS E2PROM TECHNOLOGY □ READ/WRITE NON-VOLATILE MEMORY □ WIDE VCC OPERATION AK93C45 ••• Vcc = 2 5 V ~ 55V AK93C45L«* Vcc = 1.8V ~ 5.5V


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    PDF AK93C45/L] AK93C45 AK93C45LÂ 0008-E-00 D00137D 0G01372 AK93C45F C45L AK93C45 AK93C45L AK93C45LF