0.8UM CMOS Search Results

LRX 4311

Abstract: 42dh TL258A
Contextual Info: STLC3040 SUBSCRIBER LINE INTERFACE CODEC FILTER, COFISLIC • Single chip CODEC and FILTER including all LOW-VOLTAGE SLIC functions. ■ Advanced 12V BJT, 5V CMOS 0.8um technol­ ogy. ■ Low external component count. ■ Over-sampling A/D and D/A conversion.

LRX 4311

Abstract: 2CR3 TL257A XF MR 60hz trans battery fsc
Contextual Info: STLC3040 SUBSCRIBER LINE INTERFACE CODEC FILTER, COFISLIC PRELIMINARY DATA Single chip CODEC and FILTER including all LOW-VOLTAGE SLIC functions. Advanced 12V BJT, 5V CMOS 0.8um technol­ ogy. Low external com ponent count. Over-sampling A/D and D/A conversion.

HT6576

Abstract: CS2917 400NS t2d70
Contextual Info: HT6576 Advanced SCSI CHIP Features • • • • • Support the ANSI X3.131-1986 standard Asynchronous transfer rate to 5 Mbyte/sec Support initiator and target mode 0.8um CMOS process • • On chip 48mA single-ended drivers and receivers Non internal clock needed

400NS

Abstract: HT6576A X3-131-1986 X313 t2d70
Contextual Info: HT6576A Advanced SCSI CHIP Features • • • • • Support the ANSI X3.131-1986 standard Asynchronous transfer rate to 5 Mbyte/sec Support initiator and target mode 0.8um CMOS process • • On chip 48mA single-ended drivers and receivers Non internal clock needed

Contextual Info: <ä v GM76C8128A/AL/ALL GoldStar 131,072 WORDS x 8 BIT CMOS STATIC RAM GOLDSTAR ELECTRON CO., LTD. Pin Configuration Description The GM76C8128A/AL/ALL is a 1,084,576 bits stat­ ic random access memory organized as 131,072 words by 8 bits. Using a 0.8um advanced CMOS

0.8um

Abstract: 1P2M BPSG MAGNACHIP
Contextual Info: 0.8um 1P2M Logic 5V updated in Oct 01, 2004 Features ƒ Vdd Core/IO 5V/5V ƒ Starting Material P-type (100), 9~12 Ω/□ ƒ Well Structure CMOS Twin-well ƒ Isolation Conventional LOCOS ƒ Transistor Channel Buried channel PMOS Gate oxide (Electrical) 175Å

GM76C256all

Abstract: GM76C256A GM76C256AL/ALL GM76C256A-TO GM76C256AL
Contextual Info: GM76C256AL/ALL LG Semicon Co.,Ltd. 32,768 WORDS x 8 BIT CMOS STATIC RAM Pin Configuration Description The GM 76C256A is a 262,144 bits static random access memory organized as 32,768 words by 8 bits Using a 0.8um advanced CMOS technology, it provides high speed operation with minimum cycle

Contextual Info: GM76C512/L/LL G oldStar 65,536 WORDS x 8 BIT CMOS STATIC RAM GOLDSTAR ELECTRON CO., LTD. The GM76C512/L/LL is a 524,288 bits static random access memory organized as 65,536 words by 8 bits. Using a 0.8um advanced CMOS technology, it provides high speed operation with

GM76C256B

Contextual Info: LG Semicon Co.,Ltd. Description GM76C256BL/BLL 32,768 WORDS x 8 BIT CMOS STATIC RAM Pin Configuration The GM76C256B is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. Using a 0.8um advanced CMOS technology, it provides high speed operation with minimum cycle

2P2M

Abstract: 0.8um
Contextual Info: 0.8um 2P2M Mixed Signal 5V updated in Oct 01, 2004 Features ƒ Vdd Core/IO 5V/5V ƒ Starting Material P-type (100), 9~12 Ω/□ ƒ Well Structure CMOS Twin-well ƒ Isolation Conventional LOCOS ƒ Transistor Channel Buried channel PMOS Gate oxide (Electrical)

0693M

Contextual Info: r=7 SGS-THOMSON * 7 / . RülDœilLiOTWniêi STLC3040 SUBSCRIBER LINE INTERFACE CODEC FILTER, COFISLIC PR ELIM IN ARY DATA • Single chip CODEC and FILTER including all LOW-VOLTAGE SLIC functions. ■ Advanced 12V BJT, 5V CMOS 0.8um technol­ ogy. ■ Low external component count.

Contextual Info: STLC3040 SUBSCRIBER LINE INTERFACE CODEC FILTER, COFISLIC PR ELIM IN ARY DATA • Single chip CODEC and FILTER including all LOW-VOLTAGE SLIC functions. ■ Advanced 12V BJT, 5V CMOS 0.8um technol­ ogy. ■ Low external component count. ■ Over-sampling A/D and D/A conversion.

Contextual Info: GM76C256CL/CLL-W 32,768 WORDS x 8 BIT CMOS STATIC RAM Description Pin Configuration The GM76C256CL/CLL-W is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. Using a 0.8um advanced CMOS technology and operated from a single 2.7V to 5.5V supply.

TDD 1605

Abstract: lt 6029 PLCC-44 cr16 0.8um tg-500 L3000N L3000S PLCC44 SEL24 STLC3040
Contextual Info: STLC3040 S U BSC R IBER LINE INTERFACE CODEC FILTER, CO FISLIC PRELIM IN ARY DATA PLCC44 O RDERING NUM BER: STLC3040FN Figure 1 : Pin Connection Top view o > [ « [ <° \ Single chip CODEC and FILTER including all LOW-VOLTAGE SLIC functions. Advanced 12V BJT, 5V CMOS 0.8um technol­

Contextual Info: G M 7 6 C 8 128A/AL/ALL GoldStar 131,072 WORDS x 8 BIT CMOS STATIC RAM GOLDSTAR ELECTRON C O , LTD. Pin Configuration Description The GM76C8128A/AL/ALL is a 1,084,576 bits stat­ ic random access memory organized as 131,072 words by 8 bits. Using a 0.8um advanced CMOS

76C8128

Abstract: gm76c8128 76C8128/L/LL
Contextual Info: GM76C8128/L/LL GoldStar 131,072 WORDS x 8 BIT CMOS STATIC RAM GOLDSTAR ELECTRON CO., LTD. Pin Configuration Description The GM 76C8128/L/LL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits. Using a 0.8um advanced CMOS technology, it provides high speed operation with

GM76C8128all

Abstract: GM76C8128A GM76C8128
Contextual Info: LG Semicon Co.,Ltd. GM76C8128A/AL/ALL 131,072 WORDS x 8 BIT CMOS STATIC RAM Pin Configuration Description The G M 76C 8128A/AL/ALL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits. U sing a 0.8um advanced CMOS technology, it provides high speed operation with

GM76C256B

Contextual Info: LG Semicon Co.,Ltd. GM76C256BL/BLL-W 32,768 WORDS x 8 BIT CMOS STATIC RAM Pin Configuration Description The GM76C256BL/BLL-W is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. Using a 0.8um advanced CMOS technology and operated from a single 2 7V to 5.5V supply.

GM76C8128all

Abstract: 76C8128 GoldStar gm76c8128 367 al al85 76C812 al 85
Contextual Info: Ö6Z bZL GM76C8128A/AL/ALL GZ! GoldStar 131,072 W ORDS x 8 BIT CMOS STATIC RAM GOLDSTAR ELECTRON CO., LTD. Pin Configuration Description The GM76C8128A/AL/ALL is a 1,084,576 bits stat­ ic random access m em ory organized as 131,072 w ords by 8 bits. U sing a 0.8um advanced CMOS

76C8128

Abstract: gm76c8128a GM76C8128all
Contextual Info: GM76C8128L/LL LG Semicon Co.,Ltd. 131,072 w o r d s x 8 b i t CMOS STATIC RAM Pin Configuration Description The G M 76C 8128L/LL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits. Using a 0.8um advanced CMOS technology, it provides high speed operation with

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Gate Array CMOS Library 0.8um, 5V CMOS Technology




                      
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1.2 Micron CMOS Process Family

Abstract: 0.8 Micron CMOS Process Family CMOS Process Family 08um
Contextual Info: 0.8 Micron CMOS Process Family  October 1995 Features • • • • • Process Parameters Double Poly/Double Metal 1.7µm Poly and 2.1µm Metal I Pitch 5.5 Volts Maximum Operating Voltage Twin-tub process ProToDuction Option for prototype Description

TEMIC ecl

Abstract: microcontroller radiation tolerance microcontroller radiation hard CLCC 84 CMOS NAND2
Contextual Info: Temic Full Custom: MF Semiconductors 0.8-fxm BiCMOS Gate Array Description MF is a high speed gate array combining 10-GHz n-p-n and integration close to that of CMOS LSIs, keeping low bipolar transistors, with CMOS 0.8-nm, two metal layer power competitiveness.

JORDAN

Abstract: UT8Q512 SRAM flatpack SRAM TTL UT7Q512 UT9Q512 UTXQ512
Contextual Info: UTXQ512 SRAM Product Overview Anthony Jordan Standard Product Line Manager UTMC Microelectronic Systems 719-594-8252, jordan@utmc.aeroflex.com www.utmc.com Updated January 2000 UTXQ512 SRAM • 4Mbit density – Organized 512K x 8 – 100ns X=7 and 25ns (X=8 or X=9) access time, asynchronous