0.35-UM CMOS STANDARD CELL LIBRARY INVERTER Search Results

transistor bL P09

Abstract: MB625xxx mb62xxxx mb620 transistor phl 218 MB623xxx mb625 MB624xxx N4KD FPT-70P-M
Contextual Info: FUJITSU MIC R OE LE CT RON IC S 23E D 374=17132 0 0 1 0 2 5 3 7 _ F U JITSU T - 4 2 - 4 U UHB SERIES 1.5// CMOS GATE ARRAYS K _ MB62XXXX MB60XXXX September 1988 Edition 1.1 DESCRIPTION The UHB series of 1.5-mlcron CMOS gate arrays Is a highly Integrated low-power, ultra high-speed product family that derives Its

Contextual Info: FU JITSU UHB SERIES 1.5p CMOS GATE ARRAYS MB62XXXX MB60XXXX Septem ber 1988 Edition 1.1 DESCRIPTION The UHB series o f 1 .5-m icron CMOS gate arrays Is a highly Integrated low -pow er, ultra high-speed product fam ily th a t derives its enhanced perform ance and increased user flexibility fro m the use of a system -proven, dual-colum n gate s tru ctu re and 2-layer

Contextual Info: Temic MG1 S e m i c o n d u c t o r s MG1 Sea of Gates Series 0.6 Micron CMOS Description The MG1 series is a 0.6 micron, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1 is manufactured using

design an 8 Bit ALU using VHDL software tools -FP

Abstract: AOI221 atmel 0928 OAI221 MX 0541 or03d1 ECPD07 atmel 0532 8 bit barrel shifter vhdl code AT56K
Contextual Info: Cell-Based IC Features • • • • • • • Integration of all the elements of a complex electronic system on a single IC. Memory compilers for: RAM, dual-port RAM, ROM, EEPROM and FLASH. Microcontroller and DSP cores: including ARM7TDMITM ARM Thumb , 8051TM ,

79C90

Contextual Info: /T T \ IV II^ n ^ s L ^ G S C 2 0 0 _ S e r ie s 0.35 i CMOS Standard Cell ASICs SEM IC O N D U C TO R Advance Information DS4830 - 3.1 N ovem ber 1998 INTRODUCTION T h e G S C 2 0 0 s ta n d a rd ce ll A S IC fa m ily from M itel Sem iconductor is a standard cell product combining low

CS81

Abstract: CS86 CS86ML CS86MN CS86MZ fujitsu frv fujitsu fr-v fujitsu inverter air
Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS06-20209-3Ea Semicustom CMOS Standard cell CS86 Series • DESCRIPTION The CS86 series of 0.18 m standard cells is a line of CMOS ASICs based on higher integration implemented by introducing wiring pitch reduction technology and on I/O pad placement technology to the conventional CS81

SC472

Abstract: CG21103 CG21403 CG21153 mbcg CG21303 CG21753 Mbcg21153 CG21203 QFP-208 fujitsu
Contextual Info: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE CG21 Series 0.8-micron CMOS Gate Arrays DESCRIPTION The CG21 series of 0.8 n m CMOS gate arrays are currently available in five device types with from 3 0K to 100K gates. Three more CG21 arrays, ranging from 10Kto 20Kgates, are now underdevelopm ent. These arrays achievethe u ltrafast speed of 0.37 ps per

Contextual Info: AUA 53 HARRIS Automated Universal Array Radiation Hardened CM O S/SOS Family December 1990 D escription Features • Radiation Hardened ►Total D o s e .> 1 x 1 0 Rads Si ►Survivability . > 1 x 1 0 12 Rads (Si)/s

MG1070

Contextual Info: MG1 MG1 Sea of Gates Series 0.6 Micron CMOS Description The MG1 series is a 0.6 micron, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1 is manufactured using

atmel 738

Abstract: MG1070 ATMEL 706 MG1001 atmel 829
Contextual Info: MG1 0.6 Micron Sea of Gates Introduction The MG1 series is a 0.6 micron, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1 is manufactured using SCMOS 2/2, a 0.6 micron drawn, 3 metal layers CMOS

jtag 14

Contextual Info: MG1 0.6 Micron Sea of Gates Introduction The MG1 series is a 0.6 micron, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1 is manufactured using SCMOS 2/2, a 0.6 micron drawn, 3 metal layers CMOS

LCA200K

Abstract: 130 nm CMOS standard cell library 10-JK LEA100K CLDCC LEA200K
Contextual Info: 5304Û04 ÜD m STl 3bb • LLC LSI LOGIC LEA200K Embedded Array Series Description The LEA200K Embedded Array Series is a submicron HCMOS ASIC product which com­ bines the integration and performance bene­ fits of Cell-Based ASICs with the fast turnaround time of Array-Based ASICs. The

Contextual Info: M T C - 2 2 0 0 0 C M O S 0 .7 n Standard Cell Family Services CMOS Family Features • Technology: CMOS 0 .7 m icron, double or triple la y e r m etal digital or m ix e d a n a lo g /d ig ita l processes, featu rin g self­ aligned tw in tub N an d P w ells, polycide or polysilicon

OAI221

Abstract: inverter tm 0917 OAI21
Contextual Info: Cell-Based 1C Features • • • • • • • Integration of all the elements of a complex electronic system on a single 1C. Memory compilers for: RAM, dual-port RAM, ROM, EEPROM and FLASH. Microcontroller and DSP cores: including ARM7TDMI ARM Thumb , 8051™ ,

transistor KT 209 M

Contextual Info: Preliminary IlM lI September 1989 OPEN ASIC DATA SHEET MC GATE ARRAY SERIES 0.8 MICRON SCMOS FEATURES . SUPER CM OS TECHNOLOGY -1 um DRAWN 2 METAL LAYERS . FLEXIBLE I/O CONFIGURATION : INPUT, OUTPUT, THREE-STATE, VCC & VSS . SILICON GATE 0.8 |im EFFECTIVE CHANNEL

CE81

Abstract: floor plan for 4 bit adder 722k
Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS06-20110-5Ea Semicustom CMOS Embedded array CE81 Series • DESCRIPTION The CE81 series 0.18 m CMOS embedded array is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 34 million gates which have a gate delay time of 12 ps, resulting in both integration

B634X

Abstract: lu1414 Standard TTL AOI Dual 2-Wide 2-Input LU18 c17b2 H8E0
Contextual Info: FUJITSU MICROELECTRONICS 31E I El 3 7 i n 7 ba ÜG13>435 b B F M 0 T - n - l - D January 1990 Edition 1.1 P R O D U C T PR OFILE AU Series CMOS Gate Arrays DESCRIPTION Tha AU series of 1 .2 |im CMOS gate arrays, available in eight device types with from 1 0 K to 100K gates, achieves the ultra fast

USART 6402

Abstract: advantages of master slave jk flip flop verilog code for 8254 timer
Contextual Info: Si GEC P L E S S E Y NOVEM BER 1997 S E M I C O N D U C T O R S D S 4830 - 3.0 GSC200 SERIES 0.35|a CMOS STANDARD CELL ASICs INTRODUCTION The GSC200 standard cell ASIC family from GEC Plessey Semiconductors GPS is a standard cell product combining low power, mixed voltage capability with a very high density

MB625xxx

Abstract: MB62xxxx MB625 mb622 MB604XXX C1200UHB MB624xxx C-1200UHB MB603xxx mb622xxx
Contextual Info: October 1990 Edition 3.0 FUJITSU DATA SHEET MB62XXXX, MB60XXXX UHB SERIES 1.5m CMOS GATE ARRAYS D E S C R IP T IO N The UHB series of 1.5|lm CMOS gate arrays evolved from the C20K series of 1.5|lm 20,000 gate arrays, originally introduced in 1985. Itsenhanced

tl 0741

Abstract: 2062 USB adc 809 lpg 889 TAG 8734 ao21 ND2D2 schematic diagram display samsung TAG 8518 sj 2517 transistor
Contextual Info: Introduction 1 Table of Contents 1.1 Library Description . 1-1 1.2 Features . 1-2

CS81

Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS06-20206-5Ea Semicustom CMOS Standard cell CS81 Series • DESCRIPTION The CS81 series 0.18 m CMOS standard cell is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 40 million gates which have a gate delay time of 11 ps, resulting in both integration

CDA 10.7 MC 40

Contextual Info: fíOv ¿4 m O rder this Data Sheet by H4C D MOTOROLA H4C SERIES SEMICONDUCTOR TECHNICAL DATA Advance Information H4C SERIES CMOS ARRAYS and the CDA™ ARCHITECTURE H IG H PERFORM ANCE T R IP L E LAYER M ETAL The H4C Series is Motorola’s highest performance, sub-micron family of

TRANSISTOR PHL 641

Abstract: MAX1987 2 Input NAND Schmitt Trigger with Open Drain Outp mb62xxxx transistor 1PN M0623 transistor H6C LCC-48C-A01 BO 180 gq102b7
Contextual Info: s ? CO LU • • Œ S ü j u c/> » I S £ œ Dü< i I CO ÜJ o sen • • ú 1= S -a s s e s s s 9 s 3 <*- a2 *1 • i » I I 1 I ! i ! I i 1 1 se 1 § § i 1 § 1 1 5 2 • i D x i83 I I 03 CD X X 3 X 5 i i S 1 ó 1 1 « 5 ó 3 8 •- »- MB62XXXX MBSOxxxx

headland 386

Abstract: transistor zo 607 MA 7S b2211 full subtractor using ic 74138
Contextual Info: LOGIC LCB300K Cell-Based 5 Volt ASIC Products Databook October 1994 This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.