LF2242
Abstract: injection rate control device SI11 TMC2242 diode so3
Text: LF2242 LF2242 DEVICES INCORPORATED 12/16-bit Half-Band Interpolating/ Decimating Digital Filter 12/16-bit Half-Band Interpolating/ Decimating Digital Filter DEVICES INCORPORATED FEATURES DESCRIPTION ❑ 40 MHz Clock Rate ❑ Passband 0 to 0.22fS Ripple: ±0.02 dB
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LF2242
12/16-bit
12-bit
16-bit
16-Bits
TMC2242
44-pin
LF2242
injection rate control device
SI11
TMC2242
diode so3
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tokin 0.47f 5.5v
Abstract: tokin 473 5.5v FG 5.5V 0.47F FG0H473ZF FG0H104Z FG0H105ZF FG0H223ZF FGH0H224ZF 0,10F, 5,5v, FYD FG0H225ZF
Text: FG Series The FG series includes small-size electric double-layer capacitors with excellent voltage holding characteristics. The FG series are ideal as long-time backup devices for minute-current loads in small and lightweight systems. Features • The volume of the products is approx. 1/2 that of the FYD type products. 0.22F~2.2F
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047F/5
10F/5
P0862SUCA16VOL07E
tokin 0.47f 5.5v
tokin 473 5.5v
FG 5.5V 0.47F
FG0H473ZF
FG0H104Z
FG0H105ZF
FG0H223ZF
FGH0H224ZF
0,10F, 5,5v, FYD
FG0H225ZF
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5.5v 0.22f
Abstract: No abstract text available
Text: FG Series The FG series includes small-size electric double-layer capacitors with excellent voltage holding characteristics. The FG series are ideal as long-time backup devices for minute-current loads in small and lightweight systems. Features • The volume of the products is approx. 1/2 that of the FYD type products. 0.22F~2.2F
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047F/5
10F/5
5.5v 0.22f
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FG0H105Z
Abstract: FG0H225Z FG0H473Z FG0H104Z FG0H474Z FG0H224Z FYD .047F FG0H103Z FG0H223Z FG0H475Z
Text: FG Series The FG series includes small-size electric double-layer capacitors with excellent voltage holding characteristics. The FG series are ideal as long-time backup devices for minute-current loads in small and lightweight systems. Features • The volume of the products is approx. 1/2 that of the FYD type products. 0.22F~2.2F
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047F/5
10F/5
FG0H105Z
FG0H225Z
FG0H473Z
FG0H104Z
FG0H474Z
FG0H224Z
FYD .047F
FG0H103Z
FG0H223Z
FG0H475Z
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5.5v 0.22f
Abstract: EEC-S0HD224V EECS0HD224V
Text: Electric Double Layer Capacitor Gold Capacitor Series SD Load life characteristics Part No.:EECS0HD224V (5.5V 0.22F) at +70°C 5.5V applied n=20 Typical Capacitance Change (%) The discharge current shall be calculated by the capacitance value in a ratio of 1mA/ farad
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EECS0HD224V
24hours
24hours
5.5v 0.22f
EEC-S0HD224V
EECS0HD224V
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5.5V .22f capacitor
Abstract: EEMB
Text: . EEMB B ATTERY SUPER CAPACITOR SC2I920-0.22F Brief Datasheet 1. BASIC SPECIFICATION: Items Characteristic Standard Test condition The lowest capacity when charge @1mA rated, discharge @ 1mA to cut-off voltage 0.1V 1.1 Rated capacity 0.22F 1.2 Nominal voltage
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SC2I920-0
5.5V .22f capacitor
EEMB
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FG0H225ZF
Abstract: tokin 5.5v, 2.2f FGH0H105ZF tokin 473 5.5v tokin capacitor FG0H474ZF FG 5.5V 0.47F FG0H473ZF FYD .047F 0,47F, 5,5v, FYD
Text: FG Series The FG series includes small-size electric double-layer capacitors with excellent voltage holding characteristics. The FG series are ideal as long-time backup devices for minute-current loads in small and lightweight systems. Features • The volume of the products is approx. 1/2 that of the FYD type products. 0.22F~2.2F
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047F/5
10F/5
P0704SUCA16VOL04E
FG0H225ZF
tokin 5.5v, 2.2f
FGH0H105ZF
tokin 473 5.5v
tokin capacitor
FG0H474ZF
FG 5.5V 0.47F
FG0H473ZF
FYD .047F
0,47F, 5,5v, FYD
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3.3V 0.22F
Abstract: DSK-3R3H224 DSK3R3H224 DXJ-5R5H334 DSK-3R3 022F 25V100
Text: ELECTRIC DOUBLE LAYER CAPACITORS TECHNICAL NOTE 6 Electric Characteristics Data 6-1 Coin type for memory back-up DYNACAP Series DXJ 5.5V 0.33F/DXJ-5R5H334 φ11.5x5L mm DYNACAP Series DSK 3.3V 0.22F/DSK-3R3H224 φ6.8×2.1L (mm) Endurance (85℃ 5.5V.DC)
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33F/DXJ-5R5H334
22F/DSK-3R3H224
100mA
5V100F)
2010/2011E
3.3V 0.22F
DSK-3R3H224
DSK3R3H224
DXJ-5R5H334
DSK-3R3
022F
25V100
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P239
Abstract: P-239
Text: Product System of Electric Double Layer Capacitor Electric Double Layer Capacitor SD SE Long life 5.5V 0.022 to 0.33F -25 to +70°C P.236 5.5V 0.022 to 0.22F -25 to +70°C (P.238) SG 5.5V 0.47 to 1.5F -25 to +70°C (P.237) F NF 5.5V 0.047 to 1.0F -25 to +85°C
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EE232
P239
P-239
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P239
Abstract: p237 P-239 p236
Text: 電気二重層コンデンサ 電気二重層コンデンサ商品体系表 小 形 化 業 用 SE 5.5V 0.022 to 0.22F -25 to +70°C P.238 実装性向上 産 SD 5.5V 0.022 to 0.33F -25 to +70°C (P.236) SG EL 2.5V 0.1 to 2.0F -25 to +70°C (P.241) 5.5V 0.47 to 1.5F
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EE232
P239
p237
P-239
p236
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5.5v 0.22f
Abstract: EECF5R5H224 5,5v 0.22f Gold 5.5V 0.22F
Text: Electric Double Layer Capacitor Gold Capacitor Series F Load life characteristics Part No.:EECF5R5H224 (5.5V 0.22F) at +85°C 5.5V applied n=20 Typical Capacitance Change (%) The discharge current shall be calculated by the capacitance value in a ratio of 1mA/ farad
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EECF5R5H224
24hours
5.5v 0.22f
EECF5R5H224
5,5v 0.22f
Gold 5.5V 0.22F
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Untitled
Abstract: No abstract text available
Text: HYM584000A M-Series •H Y U N D A I 4M x 8-blt CMOS DRAM MODULE DESCRIPTION The HYM584000A is a 4M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY514100A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor is mounted for each DRAM.
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OCR Scan
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HYM584000A
HY514100A
22fiF
HYM584000AM/ALM
acce4000A
1BC03-11-FEB94
0-05M
031MIN.
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HYM536100M
Abstract: No abstract text available
Text: 'HYUNDAI SEMICONDUCTOR HYM536100 Series 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536100 Is a 1M x 36-bit Fast page mode CMOS ORAM module consisting of eight HY514400 and four HY531000 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor is mounted
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OCR Scan
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HYM536100
36-bit
HY514400
HY531000
22fiF
HYM536100M
HYM536100MG
1CC02-10-MAY93
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PDF
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HYM532810
Abstract: HY5117400 HYM53
Text: ••HYUNDAI HYM532810 M-Series 8M X 32-blt CM O S DRAM MODULE DESCRIPTION The HYM532810 is a 8M x 32-bit Fast page mode C M O S DRAM module consisting of sixteen HY5117400 in 24/28 pin S O J on a 72 pin glass-epoxy printed circuit board. 0.22fi? decoupling capacitor is mounted for each DRAM,
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OCR Scan
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HYM532810
32-blt
32-bit
HY5117400
HYM532810M/LM
HYM532810MG/LMG
1CF02-10-JUN94
4b75D
0D03577
HYM53
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Untitled
Abstract: No abstract text available
Text: LF2242 DEVICES INCORPORATED FEATURES □ 40 M H z Clock Rate □ Passband 0 to 0.22Fg Ripple: ±0.02 dB □ Stopband (0.28Fs to 0.5Fs) Rejection: 59.4 dB □ User-Selectable 2:1 Decimation or 1:2 Interpolation □ 12-bit Tw o's Com plem ent Input and 16-bit Output with UserSelectable Rounding to 9 through
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OCR Scan
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LF2242
12-bit
16-bit
TMC2242
44-pin
12/16-bit
LF2242
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PDF
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1OC05
Abstract: No abstract text available
Text: H Y U N D A I H Y M 5 V 3 2 1 2 0 A IM I 32-bit CMOS X -S e r íe s DRAM MODULE DESCRIPTION The HYM5V32120A is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of two HY51V18160B in 44/50 pin TSOPII on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor
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OCR Scan
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32-bit
HYM5V32120A
HY51V18160B
22fiF
HYM5V32120ATXG/ASLTXG
DQ0-DQ31)
1DC05-10-AUG95
HYM5V32120A/ASL
1OC05
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HYM581000C Series 1M X 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000C is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor Is mounted for each DRAM.
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OCR Scan
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HYM581000C
HY531000A
22fiF
HYM581000CM/CLM
1BB07-10-M
1BB07-10-MAY93
1BB07-1
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PDF
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Untitled
Abstract: No abstract text available
Text: I F2242 LF2242 12/16-bit Half-Band Interpolating Decimating Digital Filter DEVICES IN CORPORATED DESCRIPTION □ 40 MHz Clock Rate □ Passband 0 to 0.22f s Ripple: ±0.02 dB □ Stopband (0.28/s to 0.5/s) Rejection: 59.4 dB □ User-Selectable 2:1 Decimation or
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OCR Scan
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F2242
LF2242
12/16-bit
12-bit
16-bit
TMC2242
44-pin
LF2242
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PDF
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Untitled
Abstract: No abstract text available
Text: 5 LF2242 12/16-bit Half-Band Interpolating/ Decimating Digital Filter devices incorporated DESCRIPTION FEATURES □ 40 MHz Clock Rate □ Passband 0 to 0.22fs Ripple: ±0.02 dB □ Stopband (0.28fs to 0.5fs) Rejection: 59.4 dB □ User-Selectable 2:1 Decimation or
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OCR Scan
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LF2242
12/16-bit
12-bit
16-bit
TMC2242
44-pin
LF2242
LF2242JC33
LF2242JC25
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PDF
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AY83
Abstract: TCA 810 KA5 capacitor
Text: H Y U ND A I SEMICONDUCTOR HYM536400B Series 4M X 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536400B is a 4M x 36-bit Fast page mode CM O S DRAM module consisting of nine HY5116400 In 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22ftF decoupling capacitor Is mounted for each DRAM.
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OCR Scan
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HYM536400B
36-bit
HY5116400
22ftF
HYM536400BM/BLM
HYM536400BMG/BLMG
1CE05-00-MAY93
AY83
TCA 810
KA5 capacitor
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PDF
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.047F
Abstract: No abstract text available
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 n M T a r o ^ u e K O H fle H c a T o p b i ( m o h m Kofl: BUC-0.047F BUC-0.1F@ BUC-0.22F BUC-0.33F BUC-0.47F BUC-1F H anpn^eH M e 3a 6 o n a n T e M n e p a T y p a 3a C T p B b lB O flO B
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Untitled
Abstract: No abstract text available
Text: -HYUNDAI H Y M 5 3 6 1 0 0 A M -S e r ie s I M l 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536100A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22fiF decoupling
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OCR Scan
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36-blt
HYM536100A
36-bit
HY514400A
HY531000A
22fiF
HYM536100AM/ALM
HYM536100AMG/ALMG
1CC04-01-FEB94
4b75DÃ
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PDF
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Untitled
Abstract: No abstract text available
Text: HYM536200A M-Series HYUNDAI 2M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536200A is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY514400A in 20/26 pin SOJ and eight HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22fiF decoupling
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OCR Scan
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HYM536200A
36-bit
HY514400A
HY531000A
22fiF
HYM536200AM/ALM
HYM536200AMG/ALMG
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PDF
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HYM532200AM
Abstract: L76 H hym532200A
Text: •HYUNDAI SEMICONDUCTOR HYM532200A Series 2M X 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532200A is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22ftF decoupling capacitor is mounted for each DRAM.
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OCR Scan
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HYM532200A
32-bit
HY514400A
22ftF
HYM532200AM/ALM
HYM532200AMG/ALMG
1CD03-00-MAY93
HYM532200AM
L76 H
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