0.18-UM CMOS TECHNOLOGY CHARACTERISTICS Search Results

HBT 01 - 05

Abstract: dr 25 germanium diode HBT 01 05G Silicon germanium Heterojunction Bipolar Transistor GERMANIUM SMALL SIGNAL TRANSISTORS poly silicon resistor 1lm2 0.18 um CMOS parameters hbt 05 HBT 01 - 01 G
Contextual Info: A 0.18lm 90 GHz fT SiGe HBT BiCMOS, ASIC-Compatible, Copper Interconnect Technology for RF and Microwave Applications G. Freeman, D. Ahlgren, D.R. Greenberg*, R. Groves, F. Huang, G. Hugo, B. Jagannathan, S.J. Jeng, J. Johnson*, K. Schonenberg*, K. Stein, R. Volant, S. Subbanna

Highly integrated CMOS RF SPDT switch with ESD and unit cell optimisation in MCM

Abstract: TPC2A Alcatel-Lucent
Contextual Info: Highly integrated CMOS RF SPDT switch with ESD and unit cell optimisation in MCM A.Y.-K. Chen Presented is the performance of a highly integrated RF single-pole double-throw SPDT switch fabricated in a 0.18 µm bulk CMOS process and housed in a low-cost laminated multi-chip module (MCML) package. A switch controller is also implemented and consumes

R1LV1616

Abstract: ECU car R1LV0816A R1LV08 HM62V8100 r1lp0408c m5m5v208akv R1LV0808ASB-5SI M5M5256DVP-70LL M5M5W817
Contextual Info: R1LV0816ABG -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0393-0100 Rev.1.00 2009.12.08 Description The R1LV0816ABG is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

ECU car

Abstract: 52-pin TSOP M5M5V108DVP-70HI r1lv0808 m5m5v108dkv M5M5V216ATP-70HI
Contextual Info: [Preliminary] This product is under development and its specification might be changed without any notice. R1LV0816ASD -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit / 1M word x 8bit REJ03C0397-0001 Preliminary Rev.0.01 2009.12.08 Description The R1LV0816ASD is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit,

74LS299 APPLICATION NOTE

Contextual Info: TOSHIBA TC74HC299AP/AF TC74HC299 8-Bit PIPO Shift Register With Asynchronous Clear The TC74HC299A is a high speed CMOS 8-BIT PIPO SHIFT REGISTER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.

XH018

Abstract: hall sensor 41 hall effect flow sensor 0.18-um CMOS technology characteristics X-Fab primitive sensor signal hall sensor CMOS Process Family micron cmos sensor connection 3 terminal hall effect sensor
Contextual Info: 0.18 µm CMOS Process Family XH018 - Hall Sensor MIXED-SIGNAL FOUNDRY EXPERTS Embedded HALL Effect Sensor IP in 0.18 Micron Technology Description The XH018 Hall Sensor is X-FAB’s specialized readyto-use Hall effect sensor IP, based on the 0.18 m HV CMOS Processes.

74LS74 truth table

Abstract: 74ls74 timing setup hold 74LS74 function table
Contextual Info: TOSHIBA TC74HC74AP/AF/AFN Dual D-Type Flip-Flop Preset and Clear The TC74HC74A is a high speed CMOS D FLIP-FLOP fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.

Contextual Info: TOSHIBA TC74HC4017AP/AF Decade Counter/Divider The TC74HC4017A is a high speed CMOS DECADE JOHNSON COUNTER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. It

ic 74ls164 AND SPECIFICATIONS

Abstract: ic 74HC164 AND SPECIFICATIONS 74hc164 74HC164 equivalent 54HC 74HC HC164 M54HC164 M74HC164
Contextual Info: MMHC164 HS-CMOS INTEGRATED CIRCUITS O M7WC164 PRELIMINARY DATA 8 BIT SIPO SHIFT REGISTER DESCRIPTION The M 54/74HC164 is a high speed CMOS 8 BIT SIPO SHIFT REGISTER fabricated in silicon gate C2MOS technology. It has the same high speed perform ance of LSTTL

Contextual Info: Æ ic te ! RadTolerant RAD-PAK Field Programmable Gate Arrays - m Features Radiation • • Characteristics RAD-PAK® Package Technology from Space Electronics, Inc. Improved Total Ionizing Dose TID Survivability - Can Im prove TI D 2-10x Over Standard Package

burp

Abstract: 74HCT00
Contextual Info: Revised February 1999 EMICQNDUCTGR tm MM74HCT00 Quad 2 Input NAND Gate General Description The MM74HCT00 is a NAND gates fabricated using advanced silicon-gate CMOS technology which provides the inherent benefits of CMOS— low quiescent power and wide power supply range. This device is input and output

Contextual Info: TOSHIBA TC74HC259AP/AF/AFN 8-Bit Addressable Latch The TC74HC259A is high speed CMOS MULTIPLEXERS fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.

Q5119

Contextual Info: TOSHIBA TC74VHC174F/FN/FS/FT T O SH IBA C M O S DIGITAL INTEGRATED CIRCUIT SILICON M O N O LITH IC TC74VHC174F, TC74VHC174FN, TC74VHC174FS, TC74VHC174FT HEX D-TYPE FLIP-FLOP WITH CLEAR The TC74VHC174 is an advanced high speed CMOS HEX DTYPE FLIP FLOP fabricated w ith silicon gate C2MOS

IC 4060B

Abstract: 4060B equivalent 4060b pin configuration diagram 4060B IC 4060B 74HC4060 54HC 74HC M54HC4060 M74HC4060
Contextual Info: HS-CMOS INTEGRATED , CIRCUITS c - 4 ' - - NM HM KO! wmum PRELIMINARY DATA 14-STAGE BINARY COUNTER/OSCILLATOR 3 DESCRIPTION The M 54/74HC4060 is a high speed CMOS 14-STAGE BINARY C O U N TER /O SC ILLATO R fabricated in silicon gate C2MOS technology. It has the sam e high speed perform ance of LSTTL

MAX77100

Abstract: IC74 IC-74
Contextual Info: SANYO SEMICONDUCTOR CORP 53E TW OTb T> 0010S31 037 « T S A J r- H4>~ 0 7 — 0 7 MLC74HC76M No.3628 f CMOS High-Speed Standard Logic Dual J-K Flip-Flop with Reset and Set F e a tu re s • The MLC74HC76M consists of 2 identical J-K type flip-flops. • Uses CMOS silicon gate process technology to achieve operating speeds sim ilar to LS-TTL 74LS76

CMOS

Abstract: hv 102 mos fet transistor varactor diode model in ADS bsim3 ADS varactor diode 0.18 micron 1.8V pspice model BSIM3V3 bsim3 model bsim3 model for 0.18 micron technology for hspice N-Channel jfet 100V depletion
Contextual Info: 0.6 m CMOS Process XC06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features The XC06 Series completes X-FAB‘s 0.6 Micron Modular Mixed Signal Technology with embedded Non Volatile Memory and High Voltage options.

7 SEGMENT DISPLAY cd 4511

Abstract: Diode LT 410 cd 4511 7-segment display 74HC4511 - DISPLAY DRIVER 4511B 54HC 74HC M54HC4511 M74HC4511 pin diagram decoder 4511
Contextual Info: HS-CMOS INTEGRATED CIRCUITS 7 3S m > PRELIMINARY DATA BCD TO-7 SEGMENT L/D /D LED DESCRIPTION The M54/74HC4511 is a high speed CMOS BCDTO-7 SEGMENT LATCH/DECODER/DRIVER fabricated with silicon gate C2MOS technology. It enables high speed latch and decode operation

TC74HC190A

Abstract: TC74HC190
Contextual Info: TOSHIBA TC74HC19QAP/AF TC74HC191AP/AF TC74HC190AP/AF BCD Up/Down Counter TC74HC191AP/AF 4-Bit Binary Up/Down Counter TheTC74HC190A and TC74HC191A are a high speed CMOS 4-BIT UP/DOWN COUNTERS fabricated with silicon gate C2MOS technology. They achieve the high speed operation similar to equivalent

R362T

Abstract: LT 737 diode 362t H738
Contextual Info: TOSHIBA TC74HC4511AP/AF BCD-to-7 Segment Latch/Decoder/Driver TheTC74HC4511A is a high speed CMOS BCD-TO-7 SEGMENT LATCH/DECODEFVDRIVER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.

rpp1k1

Contextual Info: 0.18 m Process Family: XT018 0.18 Micron HV SOI CMOS Technology DESCRIPTION The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate

74hc14m

Abstract: M74HC14M1R IC 74LS14 hex inverter with schmitt trigger DATA IC 74LS14 M74HC14
Contextual Info: M54HC14 M74HC14 SCS-THOMSON M HEX SCHMITT INVERTER HIGH SPEED tpD = 11 ns TYP. AT Vcc = 5 V LOW POWER DISSIPATION Ice = 1 nA (MAX.) AT Ta = 25 ”C HIGH NOISE IMMUNITY VH = 1.1 V (TYP.) AT Vcc = 5 V OUTPUT DRIVE CAPABILITY 10 LSTTLLOADS SYMMETRICAL OUTPUT IMPEDANCE

74HC19

Contextual Info: r z 7 S C S -T H O M S O N ÎÎ5 Î Î Î S 3 S S ü * M iy iO T « S M74HC195 8 BIT PIPO SHIFT REGISTEF • HIGHSPEED tpD = 13 ns TYP. at V cc = 5 V ■ LOW POWER DISSIPATION Icc = 4 nA (MAX.) at Ta = 25 °C 6 V ■ HIGH NOISE IMMUNITY Vnih = V n il = 28 % V cc (MIN.)

74HC593

Abstract: 593C
Contextual Info: M54HC593 M74HC593 S G S -T H O M S O N • y 8 BIT BINARY COUNTER WITH INPUT REGISTER 3-STATE HIGHSPEED fMAX = 80 MHz (TYP.) AT Vcc = 5 V LOW POWER DISSIPATION Ice = 4 |aA (MAX.) AT T a = 25 °C OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS FOR RCO 15 LSTTL LOADS FOR On

IC 74LS107

Abstract: 74LS107 "pin compatible"
Contextual Info: TOSHIBA TC74HC107AP/AF/AFN Dual J-K Flip-Flop with Clear The TC74HC107A is a high speed CMOS DUAL J-K FLIPFLOP fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.