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    0 232 103 033 Search Results

    0 232 103 033 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    26LS30/BEA Rochester Electronics LLC Line Driver, 1 Func, 4 Driver, CDIP16, CERAMIC, DIP-16 Visit Rochester Electronics LLC Buy
    DS96174N Rochester Electronics LLC Line Driver, 2 Func, 2 Driver, BIPolar, PDIP16, PLASTIC, DIP-16 Visit Rochester Electronics LLC Buy
    AM26LS30PC Rochester Electronics LLC Line Driver, 4 Func, 4 Driver, BIPolar, PDIP16, PLASTIC, DIP-16 Visit Rochester Electronics LLC Buy
    ISL32741EIBZ-T7A Renesas Electronics Corporation PROFIBUS Compliant 6kV VDE-Reinforced Isolated RS-485 Transceiver Visit Renesas Electronics Corporation
    ISL4486IUZ-T Renesas Electronics Corporation 5V, Half Duplex, 40Mbps,RS-485/RS-422 Transceiver Visit Renesas Electronics Corporation
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    0 232 103 033 Price and Stock

    Murrelektronik GmbH 7000-12321-0330500

    Sensor Cables / Actuator Cables M12 female 90 with cable, PUR 3x0.34 ye UL/CSA+drag chain 5m
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    Mouser Electronics 7000-12321-0330500 20
    • 1 $33.11
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    Phoenix Contact 2321033

    Specialized Cables CABLE-FCN40/1X50/ 2,0M/S7-OUT
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    Mouser Electronics 2321033
    • 1 $137.53
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    Amphenol Corporation ACA3103E20-33SBF80A232

    Circular MIL Spec Connector 11C 11#16 SKT REC W ALL
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    Mouser Electronics ACA3103E20-33SBF80A232
    • 1 $43.48
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    Murrelektronik GmbH 7000-12321-0330150

    Sensor Cables / Actuator Cables M12 female 90 with cable, PUR 3x0.34 ye UL/CSA+drag chain 1.5m
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    Mouser Electronics 7000-12321-0330150
    • 1 $19.51
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    Murrelektronik GmbH 7000-12321-0330250

    Sensor Cables / Actuator Cables M12 female 90 with cable, PUR 3x0.34 ye UL/CSA+drag chain 2.5m
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    Mouser Electronics 7000-12321-0330250
    • 1 $23.38
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    Find more 0 232 103 033 price and stock on Findchips.com

    0 232 103 033 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT50M80B2VR

    Abstract: APT50M80LVR
    Text: APT50M80B2VR APT50M80LVR 500V 58A 0.080Ω POWER MOS V T-MaxTM Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT50M80B2VR APT50M80LVR O-264 O-264 O-247 APT50M80B2VR APT50M80LVR

    Untitled

    Abstract: No abstract text available
    Text: APT50M80B2VR APT50M80LVR 500V 58A 0.080Ω POWER MOS V T-MaxTM Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT50M80B2VR APT50M80LVR O-264 O-264 O-247

    abb entrelec relays

    Abstract: RB 121 A 5-OBIC-0030 RB122BR 1SNA 103 002 R2600 RB122B abb entrelec rb 121 relays 1sna 115 935 r0400 1SNA 103 612 R2500 5-OBOC-1000-24VDC
    Text: Short Form Catalogue Relays Optocouplers Relays and optocouplers Summary Applications - Technical data . 3 Selection guide - Relay modules . 4


    Original     		PDF C0201 2003-IBF) abb entrelec relays RB 121 A 5-OBIC-0030 RB122BR 1SNA 103 002 R2600 RB122B abb entrelec rb 121 relays 1sna 115 935 r0400 1SNA 103 612 R2500 5-OBOC-1000-24VDC

    Untitled

    Abstract: No abstract text available
    Text: APT50M65JLL 500V 58A 0.065Ω R POWER MOS 7 MOSFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT50M65JLL

    Untitled

    Abstract: No abstract text available
    Text: APT60M75JFLL 600V POWER MOS 7 R 0.075Ω 58A FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT60M75JFLL OT-227

    Untitled

    Abstract: No abstract text available
    Text: APT60M75JLL 600V 58A 0.075Ω POWER MOS 7 R MOSFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT60M75JLL

    "SOT-227 B" dimensions

    Abstract: fast diode SOT-227
    Text: APT50M65JLL 500V 58A 0.065W R POWER MOS 7 MOSFET • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching


    Original     		PDF APT50M65JLL "SOT-227 B" dimensions fast diode SOT-227

    APT50M80B2VFR

    Abstract: APT50M80LVFR
    Text: APT50M80B2VFR APT50M80LVFR 500V 58A 0.080Ω POWER MOS V FREDFET T-MaxTM Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT50M80B2VFR APT50M80LVFR O-264 O-264 O-247 APT50M80B2VFR APT50M80LVFR

    Untitled

    Abstract: No abstract text available
    Text: APT50M80B2VFR APT50M80LVFR 500V 58A 0.080Ω POWER MOS V FREDFET T-MaxTM Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT50M80B2VFR APT50M80LVFR O-264 O-264 O-247

    Untitled

    Abstract: No abstract text available
    Text: APT50M65JLL 500V 58A 0.065Ω R POWER MOS 7 MOSFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT50M65JLL OT-227

    APT50M65JFLL

    Abstract: No abstract text available
    Text: APT50M65JFLL 500V POWER MOS 7 R 0.065Ω 58A FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT50M65JFLL OT-227 APT50M65JFLL

    APT60DF60

    Abstract: SGS 7010 APT50M65JLL
    Text: APT50M65JLL 500V 58A 0.065Ω POWER MOS 7 R MOSFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT50M65JLL OT-227 APT60DF60 SGS 7010 APT50M65JLL

    Untitled

    Abstract: No abstract text available
    Text: APT60M75JLL 600V 58A 0.075Ω POWER MOS 7 R MOSFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT60M75JLL OT-227

    power mosfet 600v 29a

    Abstract: No abstract text available
    Text: APT60M75JLL 600V 58A 0.075Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT60M75JLL OT-227 power mosfet 600v 29a

    APL502L

    Abstract: 305F APL502B2
    Text: APL502B2 APL502L 500V 58A 0.090Ω D LINEAR MOSFET B2 G Linear Mosfets are optimized applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions >100 msec . S T-MAX TO-264 L • Higher FBSOA


    Original     		PDF APL502B2 APL502L O-264 O-264 APL502B2-L O-247 APL502L 305F APL502B2

    Untitled

    Abstract: No abstract text available
    Text: APL502B2 APL502L 500V 58A 0.090Ω D LINEAR MOSFET B2 G Linear Mosfets are optimized applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions >100 msec . S T-MAX TO-264 L • Higher FBSOA


    Original     		PDF APL502B2 APL502L O-264 O-264 APL502B2-L O-247

    Untitled

    Abstract: No abstract text available
    Text: APT60M75JFLL 600V POWER MOS 7 R 0.075Ω 58A FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT60M75JFLL OT-227

    APL502L

    Abstract: 7485 305F APL502B2
    Text: APL502B2 APL502L 500V 58A 0.090Ω B2 LINEAR MOSFET T-MAX TO-264 Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions >100 msec . L D • Higher FBSOA


    Original     		PDF APL502B2 APL502L O-264 O-264 APL502B2-L O-247 APL502L 7485 305F APL502B2

    Untitled

    Abstract: No abstract text available
    Text: APL502B2 APL502L 500V 58A 0.090W D LINEAR MOSFET B2 G Linear Mosfets are optimized applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions >100 msec . S T-MAX TO-264 L • Higher FBSOA


    Original     		PDF APL502B2 APL502L O-264 O-264 O-247

    APL502

    Abstract: No abstract text available
    Text: APL502B2 APL502L 500V 58A 0.090W D LINEAR MOSFET B2 G Linear Mosfets are optimized applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions >100 msec . S T-MAX TO-264 L • Higher FBSOA


    Original     		PDF APL502B2 APL502L O-264 O-264 O-247 APL502

    Untitled

    Abstract: No abstract text available
    Text: APT60M75JFLL 600V POWER MOS 7 R 58A FREDFET 0.075Ω S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT60M75JFLL OT-227

    triac zd 607

    Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
    Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published


    OCR Scan     		PDF thT404 ZV15A ZY33A ZT696 ZV15B ZY33B ZT697 ZT706 ZV27A ZY62A triac zd 607 hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p

    Untitled

    Abstract: No abstract text available
    Text: Types 591-0, 592-0, 594-0 Series PO Power-Metaloxidefilm-Resistors axial, flame-retardant, coated Technical specifications Types Styles Dimensions 592 594 0925 0925 see list, next par?e 5,0 3,0 7,0 see list, next page E 24 see list, next pat + 200 ± 200 ± 200


    OCR Scan     		PDF 10-6Kâ 20/decade MIL-R-22684

    17CT3

    Abstract: 6586F a6W16 ETX 75 EA 250 301cl pn 0 273 003 210 D852 BD 266 S B536 FUS-040
    Text: Table C-2. ASCII/EBCDIC Code Conversion Table Cont. AS C II TO EBCDIC HEX GPH OCT HEX 42 3 302 C2 43 C 303 C3 44 D 304 C4 45 E 305 C5 46 F 306 C6 47 G 307 C7 48 H 310 C8 49 I 311 C9 4A J 321 Ol 4ri K 322 D2 4C L 323 D3 4D M 324 D4 4E N 325 D5 4F O 326 D6


    OCR Scan     		PDF