0/FRO 108 Search Results

pin diagram of ic 4016

Abstract: IC 4016 PIN DIAGRAM 4016 PIN DIAGRAM MC4018 rp11110 4016D
Contextual Info: MC4316 MC4016 MC4018 MOTOROLA PROGRAMMABLE MODULO-N COUNTERS PROGRAMMABLE M ODULO-N COUNTERS The m o n o lith ic devices are p ro g ra m m a b le , cascadable, modulo-N-counters. The MC4316/4016 can be program m ed to divide by any num ber N fro m 0 thru 9, the MC4018 from 0

newvicon

Abstract: Vidicon deflection yoke tv picture tube specification Chuomusen Vidicon vidicon tube Chuomusen yoke assembly S4075 e7 bulb Tube S4075
Contextual Info: NEWVICON 2 / 3 INCH T Y P E S 4 0 7 5 The S4075 is a 2 /3 inch Newvicon camera tube having magnetic focusing and magnetic deflection w ith separate mesh construction. * Extrem ely high sensitivity * * * * Extended sensitivity range fro m 400 nm to 850 nm Low lag

wd508

Abstract: 5250J smwd-10200 smwd-20200 SOL14 SMWD-108
Contextual Info: surface mount V , Wee DIP LUMPED CONSTANT 9l1?i SLO “Si PASSIVE DELAY LINE _ J # A n a lo g in p u t and o u tp u t # D e la y s s ta b le and p recise # 1 4 -p in W e e D IP p a c k a g e . 2 0 0 high} # A v a ila b le in d elay s fro m 1ns to 2 5 0 n s

Contextual Info: KMM372F404BS DRAM MODULE Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KM M 3 7 2 F 4 0 4 B S Re v is io n H is to ry Version 0.0 (Sept. 1997) • R e m o v e d tw o A C p a ra m e te rs t c a c p (a c c e s s tim e fro m C A S ) a n d tA A P (a c c e s s tim e fro m col. a d d r.) in A C C H A R A C T E R I S T I C S .

SMD MARKING CODE 202

Abstract: SMD-2025 SMD-540 SMD-1005 SMD-5150 SMD-2030 SMD-520 SMD MARKING CODE 515 SMD-1020 analog delay line
Contextual Info: \ surface mount LUMPED CONSTANT DELAY LINE # A n a lo g in p u t a n d o u tp u t # D e la y s s ta b le an d p re c is e # 1 4 -p in DIP p a c k a g e .2 0 0 h ig h # A v a ila b le in d e la y s fro m 5 n s to 2 0 0 n s # T e n (1 0 ) e q u a lly -s p a c e d ta p s

2n222a

Abstract: ZS106 2n222a npn transistor ZS90 N2222 2N2223 transistor 2n222a n3055 ZS132 ZT1482
Contextual Info: SILICON TRANSISTORS High Voltage n-p-n T h e transistors listed in the table b elo w have m axim um coliecto r-em itter voltage ratings o f 1 0 0 volts or higher and m ay therefore be used in applications w here high voltages are encountered. Further inform ation on these transistors can be found on the page indicated in the last colum n of the table, or on request fro m Ferranti Ltd.

HD68HCOOOPS-8

Abstract: HD68000Y8 NEC 05F HD68000Y-8 HD68HC00OPS10 HD68000P8 HD68HC000P10 EGC 922 HD68000-10 HD68000-12
Contextual Info: HD68000/HD68HC000 MPU M icro Processing Unit — HD68000 — The H D 6 8 0 00 is the firs t in a fa m ily o f advanced m icrop ro ­ cessors fro m H itach i. U tiliz in g V L S I technology, the H D 68000 is a fully-im plem ented 16-bit microprocessor w ith 32-bit

LM219

Abstract: LM319 D2802 LM31
Contextual Info: LINEAR INTEGRATED CIRCUITS T YPES LM 219. LM 319 D UAL DIFFERENTIAL C O M P A R A T O R S D 2 8 0 2 . OCTOBER 1 9 3 3 • C an O p era te fro m Single 5 -V Supply • Fast Response Tim e . . . 8 0 ns T y p w ith V CC = ± 1 5 V • Lo w In put Bias C urrent O ver T e m p e ra tu re

Contextual Info: DF1B SERIES 2.5m m 0 .9 8 CENTER, DISCRETE WIRE IDC CONNECTOR (APPROVED BY UL-CSA) _ S c o p e The HIROSE DF1B series has been developed to meet the demand fo r q u a lity IDC Crim p type nylon connectors th a t have the fle x ib ility to fill'h e e d s fro m p ro to ty p e quantities

MBCG

Abstract: fujitsu mbcg CG21403 SC472 CG21303 cg212 0D134 MBCG2 CG21103 QFP-196
Contextual Info: FUJITSU MICROELECTRONICS 31E D n 3 7 M cJ7bS 001345S i QFfll January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE CG21 Series 0.8-micron CMOS Gate Arrays DESCRIPTION T h e C G 21 se rie s o f 0 .8 n m C M O S g a te arra y s are c u rre n tly a va ila b le in liv e d e v ic e ty p e s w ith fro m 3 0 K to 10 0 K g a te s . T h re e m ore

Contextual Info: PHOTO TRANSISTOR ï.ir V F r ill ¡OC NPN EPITAXIAL PHOTOTRANSISTOR PHOTO DETECTOR -NEPOC SER IES— DESCRIPTION The PH 102 is a m in ia tu re NPN s illic o n p h o to tra n s is to r having e x c e p tio n a lly stable characteristics m o u n te d in a tw o -te rm in a l M IC R O D IS K package. T he spectral response, e xte n d in g fro m 40 0 to 1 0 0 0 n m , is c o m p a tib le w ith

ECL IC NAND

Contextual Info: 7 « 19 DATA SHEET FX Family High Performance Gate Arrays SEMICONDUCTOR CORPORATION Features • 5 A rra y s fro m 2 0 K to 3 5 0 K G a te s • C lo c k D is trib u tio n S c h e m e fo r • S u p e rio r P e rfo rm a n c e : H igh S p e e d an d L o w P o w e r D is s ip a tio n

MX536AJN

Abstract: TRUE RMS-TO-DC CONVERTER MX536AJCWE MX536AKCWE MX536A MX536AJD MX536AJH MX536AJQ MX536AKD MX636
Contextual Info: ykiyjxiyki 19-0824; Rev 1; 6/93 True RMS-to-DC Converter T h e M X 53 6A a n d M X 6 3 6 a re tru e R M S -to -D C c o n ­ v e rte rs . T h e y fe a tu re lo w p o w e r a n d are d e s ig n e d to a c c e p t lo w level in p u t s ig n a ls fro m 0 to 7 V rms fo r th e

im6508

Abstract: im6518 MC146805 6508 intersil HM6508 1024x1 MCM6508 MCM6508-25 MCM6518-25 ICM6518
Contextual Info: MCM6508 MCM6518 ''I -_ 1024 X 1 B IT S T A T IC R A N D O M A C C E S S M E M O R Y The M C M 6508 and M C M 6518 are fu lly s ta tic 1 0 2 4 x 1 R A M s fabricate d using CM O S silicon gate tech n o lo g y. They o ffe r lo w pow er ope ration fro m a single + 5 V supp ly w ith data rete ntio n to 2.0 V - T h e

SAA7310

Abstract: HFD27 sab 8224
Contextual Info: rs SA A 7310 y k . C M O S DECODER FOR C O M PA CT DISC S Y S TE M S G E N E R A L D E S C R IP T IO N The S A A 7 3 1 0 C D 3 A incorporates the fu n c tio n s o f d e m o d u la to r, subcoding processor, m o to r speed c o n tro l, e rro r c o rre c to r and concealm ent in one CMOS chip. The device accepts data fro m the disc and

G26V

Contextual Info: VIS VG26 V (S)16405 4,194,304x4-B it CMOS Dynamic RAM Description T h e d e v ic e C M O S D y n a m ic R A M o rg a n iz e d as 4 ,1 9 4 ,3 0 4 w o rd s x 4 b its w ith e x te n d e d d a ta o u t a c c e s s m o d e . It is fa b ric a te d w ith an a d v a n c e d s u b m ic ro n C M O S te c h n o lo g y a n d d e s ig n e d to o p e ra te fro m a s in g le

FN230

Contextual Info: UNITRODE CORP 9347963 D E | c1 3 4 7 t:]tJ3 UNITRODE CORP 92D D G lG fiS l 5 10851 POWER MOSFET TRANSISTORS UFNF230 UFNF231 UFNF232 UFNF233 200 Volt, 0.4 Ohm N-Channel FEA TU R ES • F asl Sw itch in g • Low Drive Current DESCRIPTIO N The U nitrode pow er M O SFET design u tilizes the m ost advan ce d technology available.

A1085

Abstract: TAD100 ic current limiter TEA Series LS11 TEA1060 TEA106X TEA1085 TEA1085A 1085T
Contextual Info: ^DEVELO PM ENT DATA TEA 1085 TE A 1085A T h is d a ta sheet con ta in s advance in fo rm a tio n and s p e c ific a tio n s are subject to change w ith o u t n o tic e. LISTENING-IN CIRCUIT FOR LINE-POW ERED TELEPHONE SETS The T E A 1 0 8 5 and T E A 1 0 8 5 A are b ip o la r ICs w h ich have been designed fo r use in line-pow ered telephone

TDA1085C

Contextual Info: Ä FLESSEY W Semiconductors i TDA1085C PHASE CONTROL INTEGRATED CIRCUIT T h e T D A 1085C is a silico n integ ra te d c irc u it desig n ed fo r use in phase co n tro l system s o f A C m ains w ith resistive and in d u ctive loads. T h e c irc u it m ay fo rm th e basis o t clo se d loo p

1457N1601

Contextual Info: 8 7 6 5 4 171.00 mm [6.732 in] 156.00 mm [6.142 in] 2 1 50.11 +- 0.00 0.18 mm [1.973 Z D 3 +0.000 - 0.007 ] in D 6.00 mm [0.236 in] 108.00 mm [4.252 in] 86.00 mm [3.386 in] 96.00 +- 0.00 0.18 mm 101.00 +- 0.00 0.18 mm [ [3.976 3.780 +- 0.000 0.007 in ] +0.000

1457N1602

Contextual Info: 8 7 6 5 4 3 2 1 191.00 mm [7.520 in] 179.00 mm [7.047 in] 156.00 mm [6.142 in] D 50.11 +- 0.00 0.18 mm [1.973 +0.000 - 0.007 ] in D 6.00 mm [0.236 in] M 86.00 mm [3.386 in] 108.00 mm [4.252 in] 60.00 mm [2.362 in] 96.00 +- 0.00 0.18 mm 101.00 +- 0.00 0.18 mm

LA 5461

Abstract: 780 AC extrusion 1601B
Contextual Info: 8 7 6 5 4 173.00 mm [6.811 in] 158.00 mm [6.220 in] 2 1 50.11 mm [1.973 in] Z D 3 D 6.00 mm [0.236 in] 108.00 mm [4.252 in] 86.00 mm [3.386 in] 96.00 mm [3.780 in] 101.00 mm [3.976 in] C C AA 4.25 mm [0.167 in] Z 164.00 +- 0.54 0.50 mm [6.457 +0.02 - 0.02

1457N1201

Contextual Info: 8 7 6 5 4 3 2 1 129.00 mm [5.079 in] 50.11 +- 0.00 0.18 mm 114.00 mm [4.488 in] D [1.973 X +0.000 - 0.007 ] in D 6.00 mm [0.236 in] 108.00 mm 86.00 mm [4.252 in] [3.386 in] 96.00 +- 0.00 0.18 mm 101.00 +- 0.00 0.18 mm [ [3.976 ] 3.780 +- 0.000 0.007 in +0.000

TE 555-1

Abstract: 1202B 1202E
Contextual Info: 8 7 6 5 4 3 2 1 153.00 mm [6.024 in] 141.00 mm [5.551 in] 118.00 mm [4.646 in] D 50.11 mm [1.973 in] D 6.00 mm [0.236 in] K 86.00 mm [3.386 in] 108.00 mm [4.252 in] 60.00 mm [2.362 in] 96.00 mm [3.780 in] 101.00 mm [3.976 in] C C 4.25 mm [0.167 in] K 124.00 +- 0.54