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    HM6508 Search Results

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    Luminus Devices CHM-6-50-80-9-AA00-F2-3

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    Luminus Devices CHM-6-50-80-18-AA00-F2-5

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    Luminus Devices CHM-6-50-80-36-AA10-F3-3

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    Luminus Devices CHM-6-50-80-18-AA10-F3-5

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    HM6508 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HM-6508 Harris Semiconductor 1024 x 1 CMOS RAM Original PDF
    HM-6508 Intersil 1024 x 1 CMOS RAM Original PDF
    HM-6508 Harris Semiconductor 1024 x 1 CMOS RAM Scan PDF
    HM-6508 Harris Semiconductor Digital Data Book 1981 Scan PDF
    HM-6508-2 Harris Semiconductor Digital Data Book 1981 Scan PDF
    HM-6508-5 Harris Semiconductor Digital Data Book 1981 Scan PDF
    HM-6508/883 Harris Semiconductor 1024 x 1 CMOS RAM Original PDF
    HM-6508/883 Intersil 1024 x 1 CMOS RAM Original PDF
    HM-6508883 Intersil 1024 x 1 CMOS RAM Original PDF
    HM-6508-883 Intersil 1024 x 1 CMOS RAM Original PDF
    HM-6508-9 Harris Semiconductor Digital Data Book 1981 Scan PDF
    HM-6508B-2 Harris Semiconductor Digital Data Book 1981 Scan PDF
    HM-6508B-5 Harris Semiconductor 1024 x 1 CMOS RAM Scan PDF
    HM-6508B-8 Harris Semiconductor 1024 x 1 CMOS RAM Scan PDF
    HM-6508B-9 Harris Semiconductor 1024 x 1 CMOS RAM Scan PDF
    HM-6508B-9 Harris Semiconductor Digital Data Book 1981 Scan PDF

    HM6508 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Intersil 6508B

    Abstract: HM-6508
    Text: HM-6508/883 TM 1024 x 1 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Low Power Standby. . . . . . . . . . . . . . . . . . . . 50µW Max


    Original
    PDF HM-6508/883 MIL-STD-883 20mW/MHz 180ns HM-6508/883 Intersil 6508B HM-6508

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original
    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    HM-6508-9

    Abstract: 6508 intersil HM1-6508-9 HM1-6508B-9 HM3-6508-9 HM3-6508B-9 HM-6508 HM-6508B-9
    Text: HM-6508 TM 1024 x 1 CMOS RAM March 1997 Features Description • Low Power Standby. . . . . . . . . . . . . . . . . . . . 50µW Max The HM-6508 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation.


    Original
    PDF HM-6508 HM-6508 20mW/MHz 180ns HM-6508-9 6508 intersil HM1-6508-9 HM1-6508B-9 HM3-6508-9 HM3-6508B-9 HM-6508B-9

    6508 RAM

    Abstract: No abstract text available
    Text: HM-6508/883 1024 x 1 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6508/883 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology.


    Original
    PDF HM-6508/883 MIL-STD-883 HM-6508/883 20mW/MHz 180ns 6508 RAM

    HM3-6508-9

    Abstract: HM-6508-9 HM-6508 6508B9 HM1-6508-9 HM1-6508B-9 HM3-6508B-9 HM-6508B-9 6508 RAM HM16508B-9
    Text: HM-6508 1024 x 1 CMOS RAM March 1997 Features Description • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max The HM-6508 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation.


    Original
    PDF HM-6508 HM-6508 20mW/MHz 180ns HM3-6508-9 HM-6508-9 6508B9 HM1-6508-9 HM1-6508B-9 HM3-6508B-9 HM-6508B-9 6508 RAM HM16508B-9

    Untitled

    Abstract: No abstract text available
    Text: Specifications HM-6508B-2/HM-6508B-9 ABSOLUTE M A XIM U M RATINGS OPERATING RANGE Supply Voltage - VCC -G N D -0 .3 V to + 8.0 V Input or O utput Voltage Applied (G N D - 0 .3 V ) to (VCC + 0.3 V ) Storage Temperature Operating Supply Voltage -V C C Military (-2 )


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    PDF HM-6508B-2/HM-6508B-9 1500C 20nsec;

    6508+(RAM)

    Abstract: 6508
    Text: Wiftsras HM-6508/883 1 0 2 4 x 1 C M O S RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conform ant Under the Provi­ sions of Paragraph 1.2.1. The HM-6508/883 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology.


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    PDF HM-6508/883 MIL-STD-883 HM-6508/883 180ns HM6508/883 100kHz 6508+(RAM) 6508

    m6508

    Abstract: 6505 octagon HM-6513 6513 HM-6505 HM-6512 HM-6514 logic gate diagram of ic 4096X1
    Text: fW ï -./U/L/lP HARRIS H M -6 5 0 5 SEM ICO NDUCTOR P R O D U C T S DIVISI ON A DIVISION OF H A R RIS CORPO RATION 4096 x 1 C M O S RAM Advance Information Pinout Features T O P V IE W 250ßW M AX. • LO W PO W ER S T A N D B Y • LO W POW ER O P E R A T IO N


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    PDF HM-6505 250/LIW 35mW/MHz 200ns HM-6505 A11A10A9 M-6508 HM-6512 HM-6513, m6508 6505 octagon HM-6513 6513 HM-6512 HM-6514 logic gate diagram of ic 4096X1

    74c920

    Abstract: 74C929 74C930 1 phase SCR TRIGGER PULSE TRANSFORMER d8259ac zener chn 848 P8255 interfacing 8289 with 8086 HD-6402C-9 harris semiconductor cmos
    Text: ADVANCED SEMICONDUCTOR DEVIC^S P T Y LTD y I JOHANNESBURG 2000 TEL. 802-5820 DIGITAL DATA BOOK Part of the Harris Spectrum of Integrated Circuits HARRIS $ 5 .0 0 1 9 8 4 Harris C M O S Digital Data Book Harris Semiconductor CMOS Digital Products Division's


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    PDF

    74c920

    Abstract: ram 6164 6116 RAM 2116 ram 2064 ram 74C929 4016 RAM 4045 RAM 6264 cmos ram 74C930
    Text: Industry CMOS RAM Cross Reference h a r r is c m o s ram s DESCRIPTION AMD HARRIS FUJ­ ITSU EDI HIT­ ACHI IDT M ITSU­ MOT­ BISHI OROLA N A T­ IONAL NEC RCA OKI TOSH* ISA SMOS NMOS, OTHER 1K CMOS RAMs 1Kx1, 16 Pin Synchronous HM-6508 1 Kx1, 18 Pin Synchronous


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    PDF 256x4, HM-6508 HM-6518 HM-6551 HM-6561 74C929 74C930 74C920 HM-6504 74c920 ram 6164 6116 RAM 2116 ram 2064 ram 4016 RAM 4045 RAM 6264 cmos ram

    1024X1

    Abstract: No abstract text available
    Text: HM-6508/883 £ü HARRIS S E M I C O N D U C T O R 1024x1 CMOS RAM February 1992 Features Description • This Circuit is Processed In Accordance to MII-Std-883 and is Fully Conformant Under the Provi­ sions of Paragraph 1.2.1. The HM-6508/883 is a 1024 x 1 static CMOS RAM


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    PDF HM-6508/883 1024x1 HM-6508/883 lt-STD-1835, GDIP1-T16

    STR 61001

    Abstract: harris dx10 HM-6100 prom 256x4 bit DX10 HD-6101 HM-6322 HM-6512 HM-6561 HM-6661
    Text: - - /TV L y f • ■ i^ H HARRIS SEMICONDUCTOR I g I« «— f/j f-io M l \ / l i n I S u /ic irtM PDDnm R O D U i/» C T tc S DnIV IS IO N ■ A DIVISION OF HARRIS CO RPO RA TIO N 1 ■■W ■ 64 x 12 C M O S R A M Pinout Features T O P V IE W • LO W POWER S T A N D B Y


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    PDF 500/iW 20mW/MHz HM-6512 HM-6100 HM-6322 250ns HB-61000 HB-61001 MICRO-12 STR 61001 harris dx10 prom 256x4 bit DX10 HD-6101 HM-6561 HM-6661

    6514

    Abstract: m6508 HM-6513 A3U-4 6513 HM-6505 HM-6512 HM-6514 6508 RAM a2712
    Text: fW i HARRIS <ü SEM ICO N D U CTO R P R O D U C T S DIVISION HM-6514 A DIVISION OF H A R RIS CORPO RATION 1024 X 4 CM OS RAM Pinout Features T O P V IE W LOW PO W ER ST A N D B Y 250JUW M A X . L O W P O W E R O P E R A T IO N 35mW/MHz M A X . D A T A R E T E N T IO N


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    PDF HM-6514 250JiW 35mW/MHz 200nsec HM-6514 HM-6505 M-6508 HM-6512 HM-6513, 6514 m6508 HM-6513 A3U-4 6513 HM-6505 HM-6512 6508 RAM a2712

    Untitled

    Abstract: No abstract text available
    Text: HM-6508/883 Semiconductor 102 4x 1 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to M IL-STD-883 and is Fully Conform ant Under the Provi­ sions of Paragraph 1.2.1. The HM-6508/883 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology.


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    PDF HM-6508/883 HM-6508/883 IL-STD-883 100kHz

    365089

    Abstract: LA 6508
    Text: HM-6508 Semiconductor 1 02 4x 1 CMOS RAM March 1997 Description Features • Low Power Max • Low Power O p eratio n . 20mW/MHz Max • Fast Access Time. 180ns Max


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    PDF HM-6508 HM-6508 365089 LA 6508

    Creative IC CT 1975

    Abstract: 74s188 programming sd 431 sn74s454 MMI TiW PROM programming procedure ci la 7610 74S472 PROM PROGRAMMING MB7122H 74S287 programming instructions FZH 161
    Text: Part of the Harris Spectrum of Integrated Circuits 44 HARRIS Q Quantum e! scironic#500 Sox 391262 B ra m ie y 1984 Harris Bipolar Digital Data Book 2018 Harris Semiconductor Bipolar Digital Products represent state-of-the-art production in density and performance.


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: HM-6508 f ï î H A R R IS U U S E M I C O N D U C T O R 1024x1 CMOS RAM February 1992 Features Description • Low Power S tandby. 50^iW Max. • Low Power O p e ra tio n . 20mW /MHz Max.


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    PDF HM-6508 1024x1 HM-6508 180ns

    6508 ram

    Abstract: HM-6513 HM-6508 6508 static HM-6505 HM-6512 HM-6514 m6508
    Text: SASEES5 HM-6508 P R O D U C T S D IV ISIO N 1024 x 1 C M O S R A M Pinout Features 5 0 [X\N M A X 2 0 m W /M H z M A X LOW S T A N D B Y POWER LOW O P E R A T IN G POWER • EC 1 180nsec M A X 2 .0 V O L T S M IN F A ST ACCESS T IM E D A T A R E T E N T IO N V O L T A G E


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    PDF HM-6508 180nsec HM-6508 HM-6505 M-6508 HM-6512 HM-6513, HM-6514 6508 ram HM-6513 6508 static HM-6505 HM-6512 HM-6514 m6508

    Untitled

    Abstract: No abstract text available
    Text: h a h a r r is M - 6 5 0 8 /8 8 3 1024 x 1 CMOS RAM June 1989 P in o u t Features • This Circuit is Processed in Accordance to M il-S td -8 8 3 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. • Low Power S ta n d b y .50 iW M ax.


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    PDF 180ns

    triac tag 8518

    Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
    Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference


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    TCA965 equivalent

    Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
    Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated


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    PDF DG211. DG300 DG308 DG211 TCA965 equivalent ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401

    U010B

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR TS * •» * T D E I M30HS71 Ü010b40 3 I D 4 H M -6 5 0 Q h a rris 1024 x 1 CMOS RAM Pinout Features TOP VIEW .50|iW Max. • Low Operating P o w e r . 2 0 m W /M H z Max.


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    PDF M30HS71 010b40 180ns U010B

    6513

    Abstract: 6513H HM-6513 HM-6513H octagon HM-6513L HM-6505 HM-6512 HM-6514
    Text: *Æ\ Il • HM-6513 P R O D U C T S D IV IS IO N A DIVISION OF HARRIS CORPORATION _ _ _ _ _ Features Pinout 2 5 0 ¿/W M A X . LOW POWER S T A N D B Y 3 5 m W /M H z M A X . LOW POWER O P E R A T IO N D A T A R E T E N T IO N @ 2 .0 V M IN . T T L C O M P A T IB IL IT Y IN P U T /O U T P U T


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    PDF HM-6513 HM-6514 250//W 35mW/MHz 300nsec HM-6513 HM-6505 M-6508 HM-6512 HM-6513, 6513 6513H HM-6513H octagon HM-6513L HM-6505 HM-6512 HM-6514

    Untitled

    Abstract: No abstract text available
    Text: a HM-6508 HARRIS S E M I C O N D U C T O R 1 0 2 4 x 1 CM O S RAM August 1996 Features Description • Low Power S ta n d b y .50|iW Max • Low Power O p e ra tio n . 20m W /MHz Max •


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    PDF HM-6508 180ns HM-6508 00bfl244