HM6508 Search Results

Intersil 6508B

Abstract: HM-6508
Contextual Info: HM-6508/883 TM 1024 x 1 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Low Power Standby. . . . . . . . . . . . . . . . . . . . 50µW Max

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

Contextual Info: Specifications HM-6508B-2/HM-6508B-9 ABSOLUTE M A XIM U M RATINGS OPERATING RANGE Supply Voltage - VCC -G N D -0 .3 V to + 8.0 V Input or O utput Voltage Applied (G N D - 0 .3 V ) to (VCC + 0.3 V ) Storage Temperature Operating Supply Voltage -V C C Military (-2 )

6508+(RAM)

Abstract: 6508
Contextual Info: Wiftsras HM-6508/883 1 0 2 4 x 1 C M O S RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conform ant Under the Provi­ sions of Paragraph 1.2.1. The HM-6508/883 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology.

m6508

Abstract: 6505 octagon HM-6513 6513 HM-6505 HM-6512 HM-6514 logic gate diagram of ic 4096X1
Contextual Info: fW ï -./U/L/lP HARRIS H M -6 5 0 5 SEM ICO NDUCTOR P R O D U C T S DIVISI ON A DIVISION OF H A R RIS CORPO RATION 4096 x 1 C M O S RAM Advance Information Pinout Features T O P V IE W 250ßW M AX. • LO W PO W ER S T A N D B Y • LO W POW ER O P E R A T IO N

74c920

Abstract: 74C929 74C930 1 phase SCR TRIGGER PULSE TRANSFORMER d8259ac zener chn 848 P8255 interfacing 8289 with 8086 HD-6402C-9 harris semiconductor cmos
Contextual Info: ADVANCED SEMICONDUCTOR DEVIC^S P T Y LTD y I JOHANNESBURG 2000 TEL. 802-5820 DIGITAL DATA BOOK Part of the Harris Spectrum of Integrated Circuits HARRIS $ 5 .0 0 1 9 8 4 Harris C M O S Digital Data Book Harris Semiconductor CMOS Digital Products Division's

74c920

Abstract: ram 6164 6116 RAM 2116 ram 2064 ram 74C929 4016 RAM 4045 RAM 6264 cmos ram 74C930
Contextual Info: Industry CMOS RAM Cross Reference h a r r is c m o s ram s DESCRIPTION AMD HARRIS FUJ­ ITSU EDI HIT­ ACHI IDT M ITSU­ MOT­ BISHI OROLA N A T­ IONAL NEC RCA OKI TOSH* ISA SMOS NMOS, OTHER 1K CMOS RAMs 1Kx1, 16 Pin Synchronous HM-6508 1 Kx1, 18 Pin Synchronous

1024X1

Contextual Info: HM-6508/883 £ü HARRIS S E M I C O N D U C T O R 1024x1 CMOS RAM February 1992 Features Description • This Circuit is Processed In Accordance to MII-Std-883 and is Fully Conformant Under the Provi­ sions of Paragraph 1.2.1. The HM-6508/883 is a 1024 x 1 static CMOS RAM

STR 61001

Abstract: harris dx10 HM-6100 prom 256x4 bit DX10 HD-6101 HM-6322 HM-6512 HM-6561 HM-6661
Contextual Info: - - /TV L y f • ■ i^ H HARRIS SEMICONDUCTOR I g I« «— f/j f-io M l \ / l i n I S u /ic irtM PDDnm R O D U i/» C T tc S DnIV IS IO N ■ A DIVISION OF HARRIS CO RPO RA TIO N 1 ■■W ■ 64 x 12 C M O S R A M Pinout Features T O P V IE W • LO W POWER S T A N D B Y

6514

Abstract: m6508 HM-6513 A3U-4 6513 HM-6505 HM-6512 HM-6514 6508 RAM a2712
Contextual Info: fW i HARRIS <ü SEM ICO N D U CTO R P R O D U C T S DIVISION HM-6514 A DIVISION OF H A R RIS CORPO RATION 1024 X 4 CM OS RAM Pinout Features T O P V IE W LOW PO W ER ST A N D B Y 250JUW M A X . L O W P O W E R O P E R A T IO N 35mW/MHz M A X . D A T A R E T E N T IO N

HM-6508-9

Abstract: 6508 intersil HM1-6508-9 HM1-6508B-9 HM3-6508-9 HM3-6508B-9 HM-6508 HM-6508B-9
Contextual Info: HM-6508 TM 1024 x 1 CMOS RAM March 1997 Features Description • Low Power Standby. . . . . . . . . . . . . . . . . . . . 50µW Max The HM-6508 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation.

Contextual Info: HM-6508/883 Semiconductor 102 4x 1 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to M IL-STD-883 and is Fully Conform ant Under the Provi­ sions of Paragraph 1.2.1. The HM-6508/883 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology.

3A912

Contextual Info: HU-6500 2 HARRIS 1024 x 1 CMOS RAM Pinout Features • • • • • • • • • Lo w S ta n d b y P o w e r . 5 0 |iW M ax. Lo w O p e ra tin g P o w e r .2 0 m W /M H z M ax.

365089

Abstract: LA 6508
Contextual Info: HM-6508 Semiconductor 1 02 4x 1 CMOS RAM March 1997 Description Features • Low Power Max • Low Power O p eratio n . 20mW/MHz Max • Fast Access Time. 180ns Max

Contextual Info: HM-6508 f ï î H A R R IS U U S E M I C O N D U C T O R 1024x1 CMOS RAM February 1992 Features Description • Low Power S tandby. 50^iW Max. • Low Power O p e ra tio n . 20mW /MHz Max.

6508 ram

Abstract: HM-6513 HM-6508 6508 static HM-6505 HM-6512 HM-6514 m6508
Contextual Info: SASEES5 HM-6508 P R O D U C T S D IV ISIO N 1024 x 1 C M O S R A M Pinout Features 5 0 [X\N M A X 2 0 m W /M H z M A X LOW S T A N D B Y POWER LOW O P E R A T IN G POWER • EC 1 180nsec M A X 2 .0 V O L T S M IN F A ST ACCESS T IM E D A T A R E T E N T IO N V O L T A G E

6508 RAM

Contextual Info: HM-6508/883 1024 x 1 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6508/883 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology.

HM3-6508-9

Abstract: HM-6508-9 HM-6508 6508B9 HM1-6508-9 HM1-6508B-9 HM3-6508B-9 HM-6508B-9 6508 RAM HM16508B-9
Contextual Info: HM-6508 1024 x 1 CMOS RAM March 1997 Features Description • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max The HM-6508 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation.

Contextual Info: h a h a r r is M - 6 5 0 8 /8 8 3 1024 x 1 CMOS RAM June 1989 P in o u t Features • This Circuit is Processed in Accordance to M il-S td -8 8 3 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. • Low Power S ta n d b y .50 iW M ax.

triac tag 8518

Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Contextual Info: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

U010B

Contextual Info: HARRIS SEMICOND SECTOR TS * •» * T D E I M30HS71 Ü010b40 3 I D 4 H M -6 5 0 Q h a rris 1024 x 1 CMOS RAM Pinout Features TOP VIEW .50|iW Max. • Low Operating P o w e r . 2 0 m W /M H z Max.

6513

Abstract: 6513H HM-6513 HM-6513H octagon HM-6513L HM-6505 HM-6512 HM-6514
Contextual Info: *Æ\ Il • HM-6513 P R O D U C T S D IV IS IO N A DIVISION OF HARRIS CORPORATION _ _ _ _ _ Features Pinout 2 5 0 ¿/W M A X . LOW POWER S T A N D B Y 3 5 m W /M H z M A X . LOW POWER O P E R A T IO N D A T A R E T E N T IO N @ 2 .0 V M IN . T T L C O M P A T IB IL IT Y IN P U T /O U T P U T

Contextual Info: a HM-6508 HARRIS S E M I C O N D U C T O R 1 0 2 4 x 1 CM O S RAM August 1996 Features Description • Low Power S ta n d b y .50|iW Max • Low Power O p e ra tio n . 20m W /MHz Max •