0/DIODE FAH 45 Search Results

FAH diode

Abstract: K375 DIODE FAH 45
Contextual Info: OM6OL6OPB OM50F60PB Prelim inary Data Sheet OM45L120PB OM35F120PB DUAL IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES H ig h C u r r e n t . Hi gh V ol ta g e 6 0 0 V A n d 1200V. Up To 75 A m p Dual I G B T s W it h F R E D D i o d e s FEATURES • Includes Internal FRED Diode

Irfp450

Contextual Info: [ ' - 7964142 SAM SUN G S EM IC O N D UCTOR INC D eT | 7 ^ 4 1 4 2 9 8D 0 5 2 2 4 □□□5524 3 | D T ~ 3 i -1 3 N-CHANNEL POWER MOSFETS IRFP450/451/452/453 FEATURES Low RDS on at high voltage Improved inductive ruggedness Excellent high voltage stability

DT1X

Contextual Info: OMS410 OMS410A 0MS51Q 3 PHASE, LOW VOLTAGE, LOW RDS on , MOSFET BRIDGE CIRCUIT IN A PLASTIC PACKAGE T h r e e P ha s e . 100 Volt, 15 To 45 A m p B r i d g e With C u rre n t A n d T e m p e ra tu re S ensin g In A L o w P r o f i l e P a c k a g e FEATURES

51001Z

Abstract: siemens VFT i314 laserdiode application
Contextual Info: SIEMENS 1300 nm Laser in Coaxial TO-Paekage STH 510Q1Z Designed for application In fiber-optic networks Laser diode with MUiu-Qüâiîîüirïi We!! structure Suitable for bit rates up îo 1 Gbiys * Ternary photodiode at rear mirror for monitoring and control of radiant power

Contextual Info: DATA SHEET LASER DIODE NDL7001 1 310 nm FIBER OPTIC COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE DESCRIPTION NDL7001 is a 1 310 nm laser diode for fiber optic communications and has a strained Multiple Quantum Well stMQW structure and a built-in InGaAs monitor photo diode.

2FAH-C20R

Abstract: b2 diode
Contextual Info: Features • ■ ■ New Product Development Integrated Passive Device ESD Protection to IEC61000-4-2 Spec. 2FAH-C20R Series - Integrated Passive & Active Device using CSP General Information This application specific integrated passive component is designed to provide all of the necessary ESD protection

Contextual Info: Features • ■ ■ New Product Development Integrated Passive Device ESD Protection to IEC61000-4-2 Spec. 2FAH-C20R Series - Integrated Passive & Active Device using CSP General Information This application specific integrated passive component is designed to provide all of the necessary ESD protection

diode marking FAH

Abstract: DIODE FAH 45 2FAH-C20R marking FAH FAH diode 0/DIODE FAH 45
Contextual Info: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E Features • *R ■ ■ ■ ■ Lead free versions available RoHS compliant lead free version * New Product Development Integrated Passive Device ESD Protection to IEC61000-4-2 Spec. 2FAH-C20R Series - Integrated Passive & Active Device using CSP

FAH diode

Abstract: 2FAH-C20R
Contextual Info: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E *R Features • ■ ■ ■ ■ Lead free versions available RoHS compliant lead free version * New Product Development Integrated Passive Device ESD Protection to IEC61000-4-2 Spec. 2FAH-C20R Series - Integrated Passive & Active Device using CSP

schematic powerline

Abstract: hexfets irf254 DIODE FAH 45
Contextual Info: 4Ö55M52 QGüö'ibO 2 | Preliminary Data Sheet No. PD-5.013A INTERNATIONAL R E C T IF IE R INTERNATIONAL RECTIFIER TOR HEXFET* Power Module CPY100-Series Power Half-Bridges The CPY100 series of power modules are half­ bridge configured HEXFETs, in a practical, heatsinkable electrically isolated S IP single in-line

ADB13

Contextual Info: DATA SHEET LASER DIODE NDL7001 1310 nm FIBER OPTIC COMMUNICATIONS InGaAsP M OW DC-PBH LASER DIODE DESCRIPTION NDL7001 is a 1310 nm laser diode for fiber optic com m unications and have a M u ltip le Quantum W e ll M Q W structure and built-in InGaAs m onitor photo diode.

IRF035

Abstract: IRF034
Contextual Info: HE D I 4Ô55MS2 □ 0G*i02b *1 | Data Sheet No. PD-9.585A INTERNATIONAL R ECTIFIER INTERNATIONAL RECTIFIER IO R AVALANCHE AND dv/dt RATED 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IRF034 IRFQ35 : N -C H A N N E L 60 Volt, 0.050 Ohm HEXFET TO-204AE TO-3 Hermetic Package

transistor IR 840

Abstract: OZ930
Contextual Info: International ZOR Rectifier PD 9.1449A IRG4BC20UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

Contextual Info: Preliminary Data Sheet OM6OL6OHB OM45L120HB OM50F60HB OM35F12QHB HALF-BRIDGE IGBTS IN HERMETIC ISOLATED POWER BLO CK PACKAGES High Current, High Voltage 600V And 1200V. Up To 75 A m p IGBTs With FRED Diodes. Half-Bridge C onfiguration FEATURES • • •

MM74HCT241

Abstract: MM54HCT244J M74HCT24
Contextual Info: National MM54HCT240/MM74HCT240 Inverting Octal TRI-STATE Buffer MM54HCT241/MM74HCT241 Octal TRI-STATE Buffer MM54HCT244/MM74HCT244 Octal TRI-STATE Buffer General Description These TRI-STATE buffers utilize microCMOS Technology, 3.0 micron silicon gate N-weW CMOS, and are general pur­

F75383

Abstract: F75393 2n3906 beta 2n3906 equivalent F75384 F75393 S 2N3906 thermal transistor BY395 pnp 2N3906 beta
Contextual Info: F75393 ±1oC Temperature Sensor with ß Compensation Release Date: May, 2008 Revision: V0.16P F75393 F75393 Datasheet Revision History Version Date Page Revision History V0.10P 2007/7/23 - Preliminary Version V0.11P 2007/9/20 - Add register description V0.12P

V485

Contextual Info: S-n 0 S SYSTEMS INC IDE D I 000D7SD D I 7^35^0=1 T 'V / ^ r m m 1. V- , , , - * V * 'W ^ ^ ïï^ s S ^ » ;^ PF187-03 E l M OS AREA IMAGE SENSOR OHigh Resolution 6 3 8 4 Horizontal X 485 (Vertical) Photo Sensors Incorporated #2/3-inch Size Solid State Imaging

IRF720

Abstract: 1RF721 IRF723 t11g IRF721 IRF722
Contextual Info: 01 3875081 G E SOLID STATE D E ^ 3fl7SGûl ' 0 1E 18364 D D i a3bM 3 ~ T D\ T-39-11 Standard Power M O SFET s IRF720, IRF721, IRF722, IRF723 File Number 1579 Power MOS Field-Effect Transistors

Contextual Info: Data Sheet No. PD-9.889 INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM915Q P-CHANNEL RAD HARD Product Summary -100 Volt, 0.12012, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and

Contextual Info: FU JIT SU PROGRAMMABLE SCHOTTKY 32768-B IT READ ONLY MEMORY SCHOTTKY 32768-BIT DEAP PROM 4096 WORDS x 8 BITS M B7142E/H N ovem ber 1988 Edition 4 .0 The Fujitsu MB7142 Is high spee d s c h o ttk y T T L e lectrica lly field p rogram m ab le read only m e m o ry organized as 4096 w o rds by 8 bits. W ith th re e s ta te o u tp u ts , m em o ry

78A093A

Abstract: MT88
Contextual Info: H A R R CD22M3493 IS S E M I C O N D U C T O R 1 2 x 8 x 1 BiMOS-E Crosspoint Switch January 1997 Description Features 96 Analog Switches Low Ron Guaranteed Rqn Matching Analog Signal Input Voltage Equal to the Supply Voltage Wide Operating Voltage. 4V to 16V

Contextual Info: Bulletin 127107 rev. A 09/97 International Iö R Rectifier T.HFL SERIES T-Modules FAST RECOVERY DIODES Features • 40 A 70 A 85 A Fast recovery tim e characteristics ■ Electrically isolated base plate ■ 3 5 0 0 VRMS isolating voltage ■ Standard J E D E C package

4312 Fan

Abstract: pin diagram of 7447 22342 capacitor amd 2587 2N3904 EMC2102 EMC2102-DZK transistor 8331 FAN23
Contextual Info: EMC2102 RPM-Based Fan Controller with HW Thermal Shutdown PRODUCT FEATURES Datasheet General Description Features The EMC2102 is an SMBus, closed-loop, RPM-based fan controller/driver with hardware HW thermal shutdown and reset controller. The EMC2102 is

MAX826

Abstract: X626
Contextual Info: 190863: Rev 1; 8/96 A lilX IA I The m x m rm are dual m onolithic power M OSFET drivers designed to translate T T L inputs to high voltage/curw rt o ito u ts. The MAX626 Is a dual Inverting power M O ^ TT driver. The MAX627 is a dual non-lnvertkifl power M OSFET driver, « id the MAX628