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    "SILICON STORAGE TECHNOLOGY" PROGRAM ERASE READ Search Results

    "SILICON STORAGE TECHNOLOGY" PROGRAM ERASE READ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    "SILICON STORAGE TECHNOLOGY" PROGRAM ERASE READ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    oasis

    Abstract: 32-PIN F01A SST31LH041 Actron
    Text: 4 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH041 Advance Information FEATURES: • Organized as 512K x 8 Flash + 128K x 8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector Erase and Byte Program:


    Original     		PDF SST31LH041 D16116 oasis 32-PIN F01A SST31LH041 Actron

    Bf 353

    Abstract: NEXUS FLASH ERASE oasis 32-PIN F01A SST31LH021
    Text: 2 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH021 Advance Information FEATURES: • Organized as 256K x 8 flash + 128K x 8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector Erase and Byte Program:


    Original     		PDF SST31LH021 D16116 Bf 353 NEXUS FLASH ERASE oasis 32-PIN F01A SST31LH021

    TA 7644 BF

    Abstract: cmos power TCP 8108 NEXUS FLASH ERASE oasis TCP 8108 32-PIN F01A SST31LH041 830049
    Text: 4 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH041 Advance Information FEATURES: • Organized as 512K x 8 Flash + 128K x 8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector Erase and Byte Program:


    Original     		PDF SST31LH041 D16116 TA 7644 BF cmos power TCP 8108 NEXUS FLASH ERASE oasis TCP 8108 32-PIN F01A SST31LH041 830049

    tekelec TA 355

    Abstract: NEXUS FLASH ERASE oasis SST31LH103
    Text: 1 Megabit Flash + 256 Kilobit SRAM ComboMemory SST31LH103 Advance Information FEATURES: • Organized as 64K x16 Flash + 16K x16 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations 2.7-3.6V without concurrent operation


    Original     		PDF SST31LH103 Cyc316116 tekelec TA 355 NEXUS FLASH ERASE oasis SST31LH103

    NEXUS FLASH ERASE

    Abstract: endrich oasis LH1605 A190 Carlo Gavazzi A1668
    Text: 16 Megabit 1M x 16-Bit High Speed Multi-Purpose Flash SST39LH160Q / SST39LH160 Advance Information FEATURES: • Organized as 1 M X 16 • Latched Address and Data • Single 3.0-3.6V Read and Write Operations • Fast Sector Erase and Word Program: - Sector Erase Time: 18 ms (typical)


    Original     		PDF 16-Bit) SST39LH160Q SST39LH160 SST39LH160Q NEXUS FLASH ERASE endrich oasis LH1605 A190 Carlo Gavazzi A1668

    oasis

    Abstract: No abstract text available
    Text: 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit High Speed Multi-Purpose Flash SST39LH512 / SST39LH010 / SST39LH020 / SST39LH040 Advance Information FEATURES: • Organized as 64K x8/ 128K x8/ 256K x8/ 512K x8 • Single 3.0-3.6V Read and Write Operations • Superior Reliability


    Original     		PDF SST39LH512 SST39LH010 SST39LH020 SST39LH040 SST39LH010 oasis

    SST39VF160Q

    Abstract: XX98 SST39VF160 VF160 XX90
    Text: 16 Megabit 1M x 16-Bit Multi-Purpose Flash SST39VF160Q / SST39VF160 Advance Information FEATURES: • Organized as 1 M X 16 • Latched Address and Data • Single 2.7V-only Read and Write Operations • Fast Sector Erase and Word Program: - Sector Erase Time: 3 ms typical


    Original     		PDF 16-Bit) SST39VF160Q SST39VF160 SST39VF160Q MO-142 48-LEAD XX98 SST39VF160 VF160 XX90

    SST39SF020

    Abstract: 32-PIN
    Text: 2 Megabit 256K x 8 Multi-Purpose Flash SST39SF020 Preliminary Specifications FEATURES: • Organized as 256 K X 8 • Single 5.0V Read and Write Operations • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention


    Original     		PDF SST39SF020 DetF020 MO-142 32-LEAD SST39SF020 32-PIN

    1N914 data sheet downed

    Abstract: VF100 VF1003 SST39LF100 SST39VF100 2AAA 5555
    Text: 1 Mbit 64K x16 Multi-Purpose Flash SST39LF100 / SST39VF100 Data Sheet SST39LF/VF1003.0 & 2.7V 1 Mb (x16) MPF memories FEATURES: • Organized as 64K x16 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF100 – 2.7-3.6V for SST39VF100


    Original     		PDF SST39LF100 SST39VF100 SST39LF/VF1003 SST39LF100 MO-210, 48-BALL S71129-02-000 1N914 data sheet downed VF100 VF1003 SST39VF100 2AAA 5555

    SST39VF088-90-4C-EK

    Abstract: No abstract text available
    Text: 8 Mbit x8 Multi-Purpose Flash SST39VF088 EOL Data Sheet FEATURES: • Organized as 1M x8 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention


    Original     		PDF SST39VF088 S71227 S71227-05-EOL S71227-05-EOL SST39VF088-90-4C-EK

    XX98

    Abstract: SST39VF800Q
    Text: 8 Megabit 512K x 16-Bit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information FEATURES: • Organized as 512 K X 16 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Word Program: - Sector Erase Time: 18 ms (typical)


    Original     		PDF 16-Bit) SST39VF800Q SST39VF800 SST39VF800Q 48-LEAD 8x10-ILL 48-BALL XX98

    PSRAM

    Abstract: 555H SST32HF64A1 SST32HF64A2
    Text: Multi-Purpose Flash Plus + PSRAM ComboMemory SST32HF64A2 SST32HF64A1 / 64B164Mb Flash + 4Mb SRAM, 32Mb Flash + 8Mb SRAM x16 MCP ComboMemories EOL Data Sheet FEATURES: • ComboMemories organized as: – SST32HF64A2: 4M x16 Flash + 1024K x16 PSRAM • Single 2.7-3.3V Read and Write Operations


    Original     		PDF SST32HF64A2 SST32HF64A1 64B164Mb SST32HF64A2: 1024K 01VDD S71299-04-EOL PSRAM 555H SST32HF64A2

    Untitled

    Abstract: No abstract text available
    Text: 1 Mbit 64K x16-bit Multi-Purpose Flash SST39LF100 / SST39VF100 Data Sheet SST39LF/VF1003.0 & 2.7V 1 Mb (x16) MPF memories FEATURES: • Organized as 64K x16 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF100 – 2.7-3.6V for SST39VF100


    Original     		PDF x16-bit) SST39LF100 SST39VF100 SST39LF/VF1003 SST39LF100 MO-210, 48-BALL

    555H

    Abstract: SST39VF088 1227
    Text: 8 Mbit x8 Multi-Purpose Flash SST39VF088 SST39VF0882.7V 8Mb (x8) MPF memory Preliminary Specifications FEATURES: • Organized as 1M x8 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability – Endurance: 100,000 Cycles (typical)


    Original     		PDF SST39VF088 SST39VF0882 S71227-04-000 555H SST39VF088 1227

    Untitled

    Abstract: No abstract text available
    Text: 1 Mbit 64K x16 Multi-Purpose Flash SST39LF100 / SST39VF100 Data Sheet SST39LF/VF1003.0 & 2.7V 1Mb (x16) MPF memories FEATURES: • Organized as 64K x16 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF100 – 2.7-3.6V for SST39VF100 • Superior Reliability


    Original     		PDF SST39LF100 SST39VF100 SST39LF/VF1003 SST39LF100 14ROFILE, S71129-03-000

    SST32HF324C

    Abstract: No abstract text available
    Text: Multi-Purpose Flash Plus + SRAM ComboMemory SST32HF324C SST32HF324C32Mb Flash + 4Mb SRAM x16 MCP ComboMemories Preliminary Specifications FEATURES: • ComboMemory organized as: – 2M x16 Flash + 256K x16 SRAM • Single 2.7-3.3V Read and Write Operations


    Original     		PDF SST32HF324C SST32HF324C32Mb Fa0x12-500mic-2 48-BALL S71267-02-000 SST32HF324C

    SST39WF800A

    Abstract: No abstract text available
    Text: 8 Mbit x16 Multi-Purpose Flash SST39WF800A SST39WF800A1.8V 8Mb (x16) MPF memory Preliminary Specifications FEATURES: • Organized as 512K x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (typical)


    Original     		PDF SST39WF800A SST39WF800A1 MO-210, 48-tfbga-B3K-6x8-450mic-4 48-BALL S71258-00-000 SST39WF800A

    AP 309

    Abstract: oasis 28VF040 SST28LF040 SST28SF040 SST28VF040 0418 bd china SST28SF040-120-3C- EH
    Text: 4 Megabit 512K x 8 SuperFlash EEPROM SST28SF040 / SST28LF040 / SST28VF040 Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the SST28SF040 – 3.0-3.6V for the SST28LF040 – 2.7-3.6V for the SST28VF040 • Superior Reliability


    Original     		PDF SST28SF040 SST28LF040 SST28VF040 SST28SF040 SST28LF040 AP 309 oasis 28VF040 SST28VF040 0418 bd china SST28SF040-120-3C- EH

    by 399 data sheet

    Abstract: diode BY 399 SST39LF160 SST39VF160 VF160 xx55
    Text: 16 Mbit x16 Multi-Purpose Flash SST39LF160 / SST39VF160 Data Sheet SST39LF/VF1603.0 & 2.7V 16Mb (x16) MPF memories FEATURES: • Organized as 1M x16 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF160 – 2.7-3.6V for SST39VF160 • Superior Reliability


    Original     		PDF SST39LF160 SST39VF160 SST39LF/VF1603 SST39LF160 MO-210, 48-BALL S71145-02-000 by 399 data sheet diode BY 399 SST39VF160 VF160 xx55

    SST39VF080

    Abstract: SST39LF080
    Text: 8 Mbit x8 Multi-Purpose Flash SST39LF080 / SST39VF080 SST39LF/VF0803.0 & 2.7V 8Mb (x8) MPF memories EOL Data Sheet FEATURES: • Organized as 1M x8 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF080 – 2.7-3.6V for SST39VF080 • Superior Reliability


    Original     		PDF SST39LF080 SST39VF080 SST39LF/VF0803 SST39LF080 S71146 SST39LF/VF016 S71146-07-EOL SST39VF080

    xx30

    Abstract: SST39LF100 SST39VF100 VF100
    Text: 1 Mbit 64K x16 Multi-Purpose Flash SST39LF100 / SST39VF100 Data Sheet SST39LF/VF1003.0 & 2.7V 1Mb (x16) MPF memories FEATURES: • Organized as 64K x16 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF100 – 2.7-3.6V for SST39VF100 • Superior Reliability


    Original     		PDF SST39LF100 SST39VF100 SST39LF/VF1003 SST39LF100 S71129-04-000 xx30 SST39VF100 VF100

    SST39VF088

    Abstract: No abstract text available
    Text: 8 Mbit x8 Multi-Purpose Flash SST39VF088 SST39VF0882.7V 8Mb (x8) MPF memories Preliminary Specifications FEATURES: • Organized as 1M x8 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability – Endurance: 100,000 Cycles (typical)


    Original     		PDF SST39VF088 SST39VF0882 48-tsop-EK-8 48-LEAD S71227-02-000 SST39VF088

    ams telephone

    Abstract: No abstract text available
    Text: 8 Mbit x8 Multi-Purpose Flash SST39VF088 SST39VF0882.7V 8Mb (x8) MPF memories Preliminary Specifications FEATURES: • Organized as 1M x8 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability – Endurance: 100,000 Cycles (typical)


    Original     		PDF SST39VF088 SST39VF0882 48-tsop-EK-8 48-LEAD S71227-03-000 ams telephone

    Untitled

    Abstract: No abstract text available
    Text: 4 Mbit x16 Multi-Purpose Flash SST39WF400A SST39WF400A3.0 & 2.7V 4Mb (x16) MPF memory Data Sheet FEATURES: • Organized as 256K x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (typical)


    Original     		PDF SST39WF400A SST39WF400A3 48-BUMP S71220-02-000