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    "256K X 4" DRAM REFRESH Search Results

    "256K X 4" DRAM REFRESH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMS4030JL Rochester Electronics LLC TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    TN28F020-150 Rochester Electronics LLC 28F020 - 256K X 8 Flash Visit Rochester Electronics LLC Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy
    4164-12JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) Visit Rochester Electronics LLC Buy
    4164-15JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) Visit Rochester Electronics LLC Buy

    "256K X 4" DRAM REFRESH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MT4C4256

    Abstract: 20-PIN MT4C4256DJ-7
    Text: OBSOLETE MT4C4256 L 256K x 4 DRAM DRAM 256K x 4 DRAM STANDARD OR LOW POWER, EXTENDED REFRESH FEATURES • 512-cycle refresh in 8ms (MT4C4256) or 64ms (MT4C4256 L) • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process


    Original     		PDF MT4C4256 512-cycle MT4C4256) 175mW 20-Pin MT4C4256DJ-7

    MT4C4256

    Abstract: No abstract text available
    Text: MT4C4256 883C 256K x 4 DRAM AUSTIN SEMICONDUCTOR, INC. DRAM 256K x 4 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SMD 5962-90617 • MIL-STD-883 20-Pin DIP (D-8) 20-Pin LCC FEATURES • Industry standard pinout and timing


    Original     		PDF MT4C4256 MIL-STD-883 20-Pin 175mW 512-cycle DS000014

    Untitled

    Abstract: No abstract text available
    Text: VRAM SMJ44C251B MT42C4256 256K X 4 VRAM PIN ASSIGNMENT Top View 256K x 4 DRAM with 512K x 4 SAM 28-Pin DIP (C) (400 MIL) AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-89497 • MIL-STD-883 FEATURES • Class B High-Reliability Processing • DRAM: 262144 Words x 4 Bits


    Original     		PDF SMJ44C251B MT42C4256 28-Pin MIL-STD-883 SMJ44C251B/MT42C4256

    Untitled

    Abstract: No abstract text available
    Text: MICRON 256K DRAM MT4C4258 X 4 DRAM 256K X 4 DRAM DRAM STATIC COLUMN FEATURES • Industry standard x4 pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V +10% power supply • Low power, 3mW standby; 175mW active, typical


    OCR Scan     		PDF MT4C4258 175mW 512-cycle 20-Pin 100ns

    Untitled

    Abstract: No abstract text available
    Text: MICRON SEMICONDUCTOR INC b3E D • GG07b0S T7T ■ URN MT4C4256 L 256K X 4 DRAM MICRON 256K X 4 DRAM DRAM FEATURES PIN ASSIGNMENT (Top View) • 512-cycle refresh in 8ms (MT4C4256) or 64ms (MT4C4256 L) • Industry-standard x4 pinout, timing, functions and


    OCR Scan     		PDF GG07b0S MT4C4256 512-cycle MT4C4256) 175mW MT4C4256L 200nA

    DA 11341

    Abstract: B1374 S2026 MT4C4258
    Text: MICRON MT4C4258 256K X 4 DRAM I DRAM 256K X 4 DRAM DRAM STATIC COLUMN FEATURES • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 175m W active, typical


    OCR Scan     		PDF MT4C4258 512-cycle 20-Pin MT4C42S0 C1994. DA 11341 B1374 S2026

    Untitled

    Abstract: No abstract text available
    Text: [MICRON 256K DRAM MT4C4258 X 4 DRAM 256K X 4 DRAM DRAM STATIC-COLUMN FEATURES • Industry-standard x4 pinout, timing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 175mW active, typical


    OCR Scan     		PDF MT4C4258 175mW 512-cycle 20-Pin MT4C4256

    Untitled

    Abstract: No abstract text available
    Text: MT4C4256 L 256K X 4 DRAM [M IC R O N 256K DRAM X 4 DRAM FEATURES PIN ASSIGNMENT (Top View) • 512-cycle refresh in 8ms (MT4C4256) or 64ms (MT4C4256 L) • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process


    OCR Scan     		PDF MT4C4256 512-cycle MT4C4256) 175mW MT4C4256L 200nA 20-Pin

    MT4C4256DJ-7

    Abstract: BBU RRH
    Text: MT4C4256 L 256K X 4 DRAM I^ IIC Z R O N DRAM 256K x 4 DRAM FEATURES PIN ASSIGNMENT (Top View) • 512-cycle refresh in 8ms (MT4C4256) or 64ms (MT4C4256 L) • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process


    OCR Scan     		PDF MT4C4256 512-cycle MT4C4256) 175mW MT4C4256L 200fiA 20-PIn MT4C4256DJ-7 BBU RRH

    MT4C4258

    Abstract: No abstract text available
    Text: |v i i c : r o n 256K 256K DRAM MT4C4258 X 4 DRAM 4 DRAM X DRAM STATIC-COLUMN FEATURES PIN ASSIGNMENT Top View • Industry-standard x4 pinout, timing, functions and packages • High-performance CM OS silicon-gate process • Single +5V ±10% power supply


    OCR Scan     		PDF MT4C4258 175mW 512-cycle 20-Pin

    Untitled

    Abstract: No abstract text available
    Text: MT4C4256 L 256K X 4 DRAM I^IICRON DRAM 256K X 4 DRAM FEATURES • Industry standard x4 pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V +10% power supply • Low power, .3mW standby; 150mW active, typical


    OCR Scan     		PDF MT4C4256 150mW 512-cycle 20-Pin MT4C4256L

    MT4C4256DJ-7

    Abstract: MT4C4256
    Text: MICRON I MT4C4256 L 256K SeWCOWUCTOFl INC X 4 DRAM 256K X 4 DRAM DRAM FEATURES • 512-cycle refresh in 8ms (MT4C4256) or 64ms (MT4C4256L) • Industry-standard x4 pinout, timing, functions and packages • H igh-perform ance CMOS silicon-gate process • Single +5V ±10% pow er supply


    OCR Scan     		PDF MT4C4256 512-cycle MT4C4256) 175mW MT4C4256L 200nA CYCLE24 MT4C4256DJ-7

    4C4256

    Abstract: No abstract text available
    Text: OBSOLETE MICRON I M T 4 C 4 2 5 6 L 256K X 4 DRAM SEUICO NDUCTO R.INC. DRAM 256K X 4 DRAM STANDARD OR LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT (Top View) • 512-cycle refresh in 8m s (MT4C4256) or 64ms (MT4C4256 L) • Industry-standard x4 pinout, tim ing, functions and


    OCR Scan     		PDF 512-cycle MT4C4256) MT4C4256 T4C4256L 20-Pin 4C4256

    Untitled

    Abstract: No abstract text available
    Text: M IC R O N 256K DRAM MT4C4256 X 4 DRAM 256K X 4 DRAM FEATURES • Industry standard x4 pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 175mW active, typical


    OCR Scan     		PDF MT4C4256 175mW 512-cycle 20-Pin

    Untitled

    Abstract: No abstract text available
    Text: MICRON 256K 256K DRAM X MT4C4258 X 4 DRAM 4 DRAM DRAM STATIC COLUMN FEATURES PIN ASSIGNMENT (Top View • Industry-standard x4 pinout, timing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply • Low power, 3m W standby; 175mW active, typical


    OCR Scan     		PDF MT4C4258 175mW 512-cycle 20-Pin

    4C4256

    Abstract: No abstract text available
    Text: M T4C4256 L 256K X 4 DRAM |V |IC Z R O N DRAM 256K x 4 DRAM FEATURES • 512-cycle refresh in 8ms (MT4C4256) or 64ms (MT4C4256 L) • Industry-standard x4 pinout, tim ing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V +10% power supply


    OCR Scan     		PDF T4C4256 512-cycle MT4C4256) MT4C4256 175mW T4C4256L 20-Pin 4C4256

    Untitled

    Abstract: No abstract text available
    Text: MT4C4256 256K X 4 DRAM [MICRON 256K X 4 DRAM DRAM FAST PAGE MODE FEATURES PIN A S S IG N M E N T Top View • Industry standard x4 pinout, timing, functions and packages • High-perform ance, CM OS silicon-gate process • Single +5V ±10% power supply


    OCR Scan     		PDF MT4C4256 175mW 512-cycle 20-Pin c1992, MT4C425C

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MT4C4256 VL 256K X 4 DRAM I^ICZRON 256K DRAM m 4 DRAM X D 3.3V, EXTENDED REFRESH 30 FEATURES • • • • • • • • • • • • > PIN A SSIG N M EN T Top View Best memory solution for 3.3V flat-panel controllers Single +3.3V ±5% pow er supply


    OCR Scan     		PDF MT4C4256 512-cycle 125ms MT4C42S« MT4C42S6

    MT43C4257ADJ-7

    Abstract: No abstract text available
    Text: b l l l S M T OOIOOL j? 3Tfi • URN IU |C Z R O N I MT43C4257A/8 A 256K x 4 TRIPLE-PORT DRAM SEW iCOhD'JCTOa INC. TRIPLE-PORT DRAM 256K x 4 DRAM WITH DUAL 51 2 x 4 SAMS FEATURES • • • • • • • • Three asynchronous, independent, data-access ports


    OCR Scan     		PDF MT43C4257A/8 500mW 512-cycle MT43C4257A/8A MT43C42S7A/ MT43C4257ADJ-7

    Untitled

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC bOE D • L111SMT OOObTBb S5T ■ URN SUPERSEDED BY MT43C4257A/8A M in P H M I ^ MT43C4257/8 256K X 4 TRIPLE-PORT DRAM TRIPLE-PORT DRAM 256K X 4 DRAM WITH DUAL 512 X 4 SAMS FEATURES P IN A S S IG N M E N T (T op V ie w ) PIN ASSIGNMENT


    OCR Scan     		PDF L111SMT MT43C4257A/8A) MT43C4257/8 512-cycle

    256K 4bit DRAM

    Abstract: No abstract text available
    Text: SUPERSEDED BY MT43C4257A/8A M IC R O N 256K X M T43C 4257/8 4 TR IP LE -P O R T DRAM 256K X 4 DRAM WITH DUAL 5 1 2 x 4 SAMS TRIPLE-PORT DRAM FEATURES PIN ASSIGNMENT (Top View) 40-Pin SOJ (SDB-3) SPECIAL FUNCTIONS M ASKED W RITE (W rite-Per-Bit) PERSISTENT M ASKED WRITE


    OCR Scan     		PDF MT43C4257A/8A) 512-cycle 048-bit 256K 4bit DRAM

    Untitled

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC SSE D m DQ0M2SÖ ^Qâ • MRN MT4C4256 L 256K X 4 DRAM fVIICIRON ORAM 256K X 4 DRAM LOW POWER, EXTENDED REFRESH o 30 > FEATURES • Industry standard x4 pinout, tim ing, functions and packages • High-perform ance, CM OS silicon-gate process


    OCR Scan     		PDF MT4C4256 150mW 512-cycle 200jiA 20-Pin MT4C4256L

    MT4C1024DJ

    Abstract: MT302569
    Text: MICRON I TECHNOLOGY. INC. SSE I> niCRON TECHNOLOGY INC • MT3D2569 256K x 9 DRAM M bill 5 4=1 G0DH7G7 T5Q ■ URN 256K x 9 DRAM DRAM MODULE FAST PAGE MODE MT3D2569 LOW POWER, EXTENDED REFRESH (MT3D2569 L) FEATURES • Industry standard pinout in a 30-pin single-in-line


    OCR Scan     		PDF MT3D2569 30-pin 625mW 512-cycle MT3D2569) 125US Q00471L MT4C1024DJ MT302569

    Untitled

    Abstract: No abstract text available
    Text: m i c r o n 256K MT43C4257/8 X 4 TPDRAM 256K X 4 DRAM WITH DUAL 5 1 2 x 4 SAMS TRIPLE PORT DRAM FEATURES PIN ASSIGNMENT Top View Three asynchronous, independent, data access ports Fast access times - 80ns random, 25ns serial Operation and control compatible with 1 Meg VRAM


    OCR Scan     		PDF MT43C4257/8 500mW 512-cycle 048-bit 40-Pin