DSADA001698.pdf by Hewlett-Packard

Partial File Text Gallium Arsenide Field Effect Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB and G1 dB are specified at bias points which optimize these parameters.
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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"TRANSISTORS SELECTION GUIDE" atf 26836 ATF-10100 ATF-10136 ATF-13100 ATF-13336 ATF-13736 ATF-13786 ATF-26836 ATF-26884 ATF-36077 ATF-36163 Field Effect Transistors GHZ micro-X Package

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