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DSA00261517.pdf
by Infineon Technologies
Partial File Text
IPB080N06N G OptiMOS® Power-Transistor IPP080N06N G Product Summary Features V DS · Low gate charge for fast switching applications R DS(on),max · N-channel enhancement - norma
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Original
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Unknown
Pb Free
Unknown
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Unknown
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IPP080N06N
PG-TO220-3
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