DSAZIHA1000111314.pdf by International Rectifier

Partial File Text IRGP6650DPbF IRGP6650D-EPbF Â Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V Â Â C C C IC = 50A, TC =100Â°C tSC ï³ï 5Âµs, TJ(max) = 17
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Bridge Rectifier, 35A, 600V