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    DSAZIHA1000111378.pdf by International Rectifier

    • IRFHM830PbF HEXFET® Power MOSFET VDS 30 3.8 (@VGS = 10V) Qg (typical) RG (typical) ID mΩ 15 2.5 RDS(on) max V nC Ω 40h (@Tc(Bottom) = 25°C) 3.3mm x 3.3mm
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