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DSAZIHA1000111399.pdf
by International Rectifier
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IRGP6690DPbF IRGP6690D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 90A, TC =100°C tSC ⥠5µs, TJ(max) = 175°C G G VCE(
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