DSAH00422572.pdf by Panasonic
- IGBTs 2PG302 2PG302 ForInsulatedGateBipolarTransistor s Features q q q Unit : mm 7.0±0.3 3.0±0.2 3.5±0.2 High breakdown voltage : VCES= 400V Large current control possible : IC(peak)=130A
- Original
- Unknown
- Unknown
- Obsolete
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