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    DSAZIHA1000111438.pdf by International Rectifier

    • IRF5801PbF-1 HEXFET® Power MOSFET VDS RDS(on) max 200 Qg (typical) ID (@TA = 25°C) 2.20 Ω 3.9 (@VGS = 10V) V 0.6 D 1 6 D nC D 2 5 D A G
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